MOTOROLA MRF857D

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by MRF857/D
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Designed for 24 Volt UHF large–signal, common emitter, class A linear
amplifier applications in industrial and commercial equipment operating in the
range of 800 – 960 MHz.
CLASS A
800 – 960 MHz
2.1 W (CW), 24 V
NPN SILICON
RF POWER TRANSISTOR
Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics
Output Power = 2.1 Watts CW
Minimum Power Gain = 12.5 dB
Minimum ITO = + 43 dBm
Typical Noise Figure = 5.25 dB
Characterized with Small–Signal S–Parameters and Series Equivalent
Large–Signal Parameters from 800 – 960 MHz
Silicon Nitride Passivated
100% Tested for Load Mismatch Stress at All Phase Angles with 30:1
VSWR @ 24 Vdc, IC = 0.3 Adc and Rated Output Power
CASE 305D–01, STYLE 1
Will Withstand RF Input Overdrive of 0.4 W CW
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V CEO
30
Vdc
Collector–Base Voltage
V CBO
55
Vdc
Emitter–Base Voltage
VEBO
4
Vdc
PD
17
0.114
Watts
W/ C
Total Device Dissipation @ TC = 50 C
Derate above 50 C
Operating Junction Temperature
Storage Temperature Range
TJ
200
C
Tstg
– 65 to +150
C
Symbol
Max
Unit
R JC
8.4
C/W
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance (TJ = 150 C, TC = 50 C)
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
V (BR)CEO
28
35
—
Vdc
Collector–Emitter Breakdown Voltage (IC = 20 mA, VBE = 0)
V(BR)CES
55
85
—
Vdc
Collector–Base Breakdown Voltage (IC = 20 mA, IE = 0)
V (BR)CBO
55
85
—
Vdc
Emitter–Base Breakdown Voltage (IE = 1 mA, IC = 0)
V (BR)EBO
4
5
—
Vdc
ICES
—
—
1
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 20 mA, IB = 0)
Collector Cutoff Current (VCB = 24 V, IE = 0)
mA
(continued)
REV 3
MOTOROLA
RF DEVICE DATA
Motorola, Inc. 1997
MRF857S
1
ELECTRICAL CHARACTERISTICS — continued
Characteristic
Symbol
Min
Typ
Max
Unit
hFE
30
60
120
—
Cob
2.4
3.3
4.4
pF
Pg
12.5
13.5
—
dB
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 A, V CE = 5 V)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 24 V, f = 1 MHz)
FUNCTIONAL CHARACTERISTICS
Common–Emitter Power Gain
(VCE = 24 V, IC = 0.3 A, f = 840 – 900 MHz,
Power Output = 2.1 W)
Load Mismatch
(Po = 2.1 W)
(VCE = 24 V, IC = 0.3 A, f = 840 MHz,
Load VSWR = 30:1, All Phase Angles)
No Degradation in
Output Power
P in(over)
—
—
0.4
W
Third Order Intercept Point
(VCE = 24 V, IC = 0.3 A)
(f1 = 900 MHz, f2 = 900.1 MHz,
Meas. @ IMD 3rd Order = – 40 dBc)
ITO
+ 43
+ 44.5
—
dBm
Noise Figure
(VCE = 24 V, IC = 0.3 A, f = 900 MHz)
NF
—
5.25
—
dB
Input Return Loss
(VCE = 24 V, IC = 0.3 A, f = 840 – 900 MHz,
Power Output = 2.1 W)
IRL
—
– 15
–10
dB
RF Input Overdrive
(VCE = 24 V, IC = 0.3 A, f = 840 MHz)
No degradation
Table 1. MRF857S Common Emitter S–Parameters
S 11
VCE
(V)
IC
(A)
f
(MHz)
|S11|
24
0.3
800
820
840
860
880
900
920
940
960
0.915
0.915
0.915
0.913
0.914
0.914
0.913
0.915
0.916
S21
S12
|S21|
165
165
165
164
164
163
163
162
162
S 22
|S12|
2.098
2.049
1.991
1.951
1.912
1.865
1.832
1.783
1.748
54
53
52
51
50
49
48
47
46
|S22|
0.037
0.038
0.038
0.039
0.040
0.041
0.042
0.043
0.043
58
58
58
59
59
59
59
59
59
–157
–157
–157
–158
–158
–158
–158
–159
–159
0.343
0.345
0.349
0.352
0.355
0.359
0.362
0.366
0.369
Table 2. Zin and ZOL* versus Frequency
f
(MHz)
840
870
900
Zin
(Ohms)
1.5
1.7
1.5
ZOL*
(Ohms)
4.4
4.7
4.8
18.4
18.0
14.9
– 26.3
– 26.1
– 26.2
V CE = 24 V, IC = 0.3 A, P o = 2.1 W
ZOL* = Conjugate of optimum load impedance into which the device operates at a given output power, voltage and frequency.
MRF857S
2
MOTOROLA RF DEVICE DATA
VCE
R8
R1
R2
F1
V_SUPPLY
+
C1
Q1
Q2
R9
R5
R4
R3
R10
B1
R7
+
C2
B3
C4
B2
C3
B4
R6
C7
C5
+
C8
C9
L1
TL6
C6
TL7
TL2
TL11
TL14
L2
DUT
TL1
C12
C10
TL16
TL5
INPUT
OUTPUT
TL10
TL13
C11
TL3
TL9
TL12
TL8
TL15
TL4
B1, B4
B2, B3
C1
C2, C8
C3, C9
C4, C7
C5, C6
C10, C12
C11
F1
L1, L2
Q1
Q2
Long Ferrite Bead, Fair Rite (2743021447)
Short Ferrite Bead, Fair Rite (2743019447)
250 F, 50 Vdc Electrolytic Capacitor
10 F, 50 Vdc Electrolytic Capacitor
0.1 F, Chip Capacitor
1000 pF, Chip Capacitor
100 pF, Chip Capacitor
43 pF, 100 Mil Chip Capacitor
0.8–8 pF, Johansen Gigatrim
1 A Micro–Fuse
5 Turns, 20 AWG, 0.126 ID, 46.2 nH
MMBT2222ALT1, NPN Transistor
BD136, PNP Transistor
R1
R2
R3
R4
R5
R6
R7
R8
R9, R10
TL1 – TL16
V_Supply
V CE
Board
330 , 1/4 W
500 Potentiometer, 1/4 W
4.7K , 1/4 W
2 x 4.7K , 1/4 W
47 , 2 W
75 , 1/4 W
4.7 , 1/4 W
10 , 3 W
4 x 39 , 1/8 W Chip Resistors in Parallel
Microstrip Transmission Line
+ 27 Vdc 0.5 V Due to Resistor Tolerance
+ 24 Vdc @ 0.3 A
0.030 Glass–Teflon 2 oz. Cu, r = 2.55
Figure 1. MRF857S Class A RF Test Fixture Schematic
MOTOROLA RF DEVICE DATA
MRF857S
3
TYPICAL CHARACTERISTICS
15
4
Gpe
14.5
3.5
14
3
VCC = 24 Vdc
IC = 300 mA
Pout = 2.1 W (CW)
13.5
2.5
13
2
12.5
1.5
VSWR
12
830
840
850
860
870
880
f, FREQUENCY (MHz)
890
1
910
900
Figure 2. Performance of MRF857S in
Broadband Circuit
4
16
3.5
15
Pout
Tj = 150 C
Tf = 50 C
14
3
2.5
2
Gpe
VCC = 24 Vdc
IC = 300 mA
f = 870 MHz
13
1000
12
1.5
11
1
10
0.5
0
1500
500
9
0
0.05
0.1
0.15
0.2
0.25
0.3
Pin, INPUT POWER (WATTS)
0.35
8
0.4
0
0
2
4
Figure 3. MRF857S Output Power & Power Gain
versus Input Power
6
8
10 12 14 16 18 20 22 24 26 28
VCE (Vdc)
Figure 4. MRF857S DC SOA
1.00E+08
850
Tj = 175 C
Tf = 50 C
800
750
9.80E+06
1.00E+07
2.01E+06
1.00E+06
4.82E+05
700
1.32E+05
1.00E+05
4.03E+04
1.37E+04
5.05E+03
650
1.00E+04
600
2.02E+03
1.00E+03
550
8.67E+02
50
00
2
4
6
8
10 12 14 16 18 20 22 24 26 28
VCE (Vdc)
Figure 5. MRF857S DC SOA
(This device is MTBF limited for VCE 20 Vdc.)
MRF857S
4
1.00E+02
100
120
140
160
180 200
220
TJ, JUNCTION TEMPERATURE ( C)
240
260
Figure 6. MRF857S MTBF Factor versus
Junction Temperature
MOTOROLA RF DEVICE DATA
R3
R2
R1
Q1
R5
R7
C3
+
C1
+
R6
Q2
R4
B4
B1
C5
C4
C2
B2
L1
R8
R10
C7
R9
B3
C9
+
C8
C6
C10
C12
L2
C11
MRF857S
Figure 7. MRF857S Test Fixture Component Layout
MOTOROLA RF DEVICE DATA
MRF857S
5
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
K
4
D
1
3
DIM
A
C
D
E
F
J
K
M
2
F
J
STYLE 1:
PIN 1.
2.
3.
4.
C
E
INCHES
MIN
MAX
0.200
0.220
0.095
0.130
0.055
0.065
0.040
0.050
0.025
0.035
0.003
0.007
0.235
0.265
45 NOM
MILLIMETERS
MIN
MAX
5.08
5.59
2.41
3.30
1.40
1.65
1.02
1.27
0.64
0.89
0.08
0.18
5.97
6.73
45 NOM
EMITTER
BASE
EMITTER
COLLECTOR
A
CASE 305D–01
ISSUE O
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
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MRF857S
6
MRF857/D
MOTOROLA RF DEVICE
DATA