MOTOROLA MRF847

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by MRF847/D
SEMICONDUCTOR TECHNICAL DATA
The RF Line
. . . designed for 12.5 volt UHF large–signal, common–base amplifier applications in industrial and commercial FM equipment operating in the range of
806 – 960 MHz.
• Specified 12.5 Volt, 870 MHz Characteristics
Output Power = 45 Watts
Power Gain = 4.5 dB Min
Efficiency = 60% Min
45 W, 870 MHz
RF POWER
TRANSISTOR
NPN SILICON
• Series Equivalent Large–Signal Characterization
• Internally Matched Input for Broadband Operation
• Tested for Load Mismatch Stress at All Phase Angles with 10:1 VSWR @
High Line and Rated Drive
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Silicon Nitride Passivated
CASE 319–07, STYLE 1
MAXIMUM RATINGS
Symbol
Value
Unit
Collector–Emitter Voltage
Rating
VCEO
16.5
Vdc
Collector–Base Voltage
VCBO
38
Vdc
Emitter–Base Voltage
VEBO
4.0
Vdc
Collector Current — Continuous
IC
12
Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
150
0.85
Watts
W/°C
Storage Temperature Range
Tstg
– 65 to +150
°C
TJ
200
°C
Symbol
Max
Unit
RθJC
1.17
°C/W
Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
V(BR)EBO
4.0
—
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, IB = 0)
V(BR)CEO
16.5
—
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
V(BR)CES
38
—
—
Vdc
ICES
—
—
10
mAdc
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0)
(continued)
RF DEVICE DATA
MOTOROLA
Motorola, Inc. 1994
MRF847
1
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
hFE
40
65
120
—
Cob
—
75
90
pF
Common–Base Amplifier Power Gain
(VCC = 12.5 Vdc, Pout = 45 W, f = 870 MHz)
GPB
4.5
5.5
—
dB
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 45 W, f = 870 MHz)
ηc
60
68
—
%
Load Mismatch
(VCC = 15.5 Vdc, Pin = 16 W, f = 870 MHz,
VSWR = 10:1, All Phase Angles)
ψ
ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 Adc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS
No Degradation in Output Power
L4
L3
B
B
Vre PORT
C8
C12
TL1
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
L1
C1
C13
C11
C10
ÇÇ
ÇÇ
ÇÇ
ÇÇ
50 Ω
+
SOCKET ASSY.
C9
+
+12.5 V
C3
C4
D.U.T.
TL2
L2
TL3
C2
C1 — 51 pF, 100 mil Chip Capacitor
C2 — 12 pF, Mini–Underwood
C3 — 11 pF, Mini–Underwood
C4, C5 — 21 pF, Mini–Underwood
C6 — 0.08 – 8.0 pF Johansen Gigatrim
C7 — 47 pF, 100 mil Chip Capacitor
C8, C13 — 10 µF, 25 WV Electrolytic Capacitor
C9, C12 — 1000 pF Unelco J101
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
C5
C7
ÇÇ
ÇÇ
ÇÇ
ÇÇ
TL4
50 Ω
C6
C10, C11 — 91 pF Mini–Underwood
L1, L2 — 4 Turns #18 Enameled, 200 mil ID
L3, L4 — 12 Turns #22 Enameled, Wound Over 10 Ω Resistor
TL1, TL4 — 50 Ω Microstrip Line
TL2 — Microstrip (Zo = 38 ohms, λ/4 @ 838 MHz)
TL3 — Microstrip (Zo = 28 ohms, λ/4 @ 838 MHz)
Board Material — 0.032″ Glass–Teflon, 2 oz. cu. clad, εr = 2.56
B — Ferrite Bead, Ferroxcube 56–590–65–3B
Figure 1. 806 – 870 MHz Broadband Test Circuit
MRF847
2
MOTOROLA RF DEVICE DATA
70
70
f = 806 MHz
VCC = 12.5 V
60
Pout , OUTPUT POWER (WATTS)
870 MHz
50
960 MHz
40
30
20
10
60
50
Pin = 16 W
12 W
40
8W
30
20
0
4
8
12
16
Pin, INPUT POWER (WATTS)
20
800
Figure 2. Output Power versus Input Power
820
840
860
880
900
f, FREQUENCY (MHz)
960
6.5
f = 870 MHz
GPB
70
5.5
Pin = 16 W
G PB , POWER GAIN (dB)
Pout , OUTPUT POWER (WATTS)
940
Figure 3. Output Power versus Frequency
80
60
12 W
80
ηc
4.5
50
40
70
60
3.5
8W
30
50
VCC = 12.5 V
Pin = 16 W
2.5
20
10
920
40
1.6:1
1.4:1
INPUT VSWR
6
8
10
12
VCC, SUPPLY VOLTAGE (VOLTS)
14
Figure 4. Output Power versus Supply Voltage
960
915
f = 960 MHz
870
915
838
ZOL*
806
Zo = 10 Ω
800
820
Zin
840
860
f, FREQUENCY (MHz)
880
20
1.2:1 10
900
Figure 5. Typical Broadband Circuit Performance
f
MHz
f = 806 MHz
838
870
16
1.5
30
η c , COLLECTOR EFFICIENCY
Pout , OUTPUT POWER (WATTS)
VCC = 12.5 V
VCC = 12.5 Vdc, Pin = 16 W, Pout = 45 W
Zin
f
ZOL*
(Ohms)
MHz
(Ohms)
806
0.99
+j5.52
806
0.67
+j1.33
838
1.48
+j5.47
838
0.68
+j1.66
870
1.79
+j5.25
870
0.72
+j2.16
915
2.12
+j4.80
915
0.83
+j2.40
960
2.11
+j4.28
960
0.99
+j2.50
ZOL* = Conjugate of the optimum load impedance into which the
ZOL* = device output operates at a given output power, voltage and
ZOL* = frequency.
Figure 6. Series Equivalent Input/Output Impedances
MOTOROLA RF DEVICE DATA
MRF847
3
PACKAGE DIMENSIONS
Q 2 PL
-AL
IDENTIFICATION
NOTCH
6
5
0.15 (0.006)
M
T A
M
N
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
-N1
2
3
DIM
A
B
C
D
E
F
H
J
K
L
N
Q
K
F
D 2 PL
0.38 (0.015) M
B
0.38 (0.015)
T A
M
N
M
T A
M
M
N
M
J
C
H
E
-T-
SEATING
PLANE
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
INCHES
MIN
MAX
0.965 0.985
0.355 0.375
0.230 0.260
0.115 0.125
0.102 0.114
0.075 0.085
0.160 0.170
0.004 0.006
0.090 0.110
0.725 BSC
0.225 0.241
0.125 0.135
MILLIMETER
MIN
MAX
24.52 25.01
9.02
9.52
5.85
6.60
2.93
3.17
2.59
2.90
1.91
2.15
4.07
4.31
0.11
0.15
2.29
2.79
18.42 BSC
5.72
6.12
3.18
3.42
BASE (COMMON)
EMITTER (INPUT)
BASE (COMMON)
BASE (COMMON)
COLLECTOR (OUTPUT)
BASE (COMMON)
CASE 319–07
ISSUE M
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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MRF847
4
◊
*MRF847/D*
MRF847/D
MOTOROLA RF DEVICE
DATA