BLH3355 NPN EPITAXIAL SILICON RF TRANSISTOR CHIP (BLH3355) Description NPN epitaxial silicon RF transistor for microwave low-noise amplification Features Low noise and high gain bandwidth product High power gain Applications UHF / VHF wide band amplifier Structure Size Planar type Electrodes: Aluminum alloy Backside metal: Au alloy Chip size: 370µm ×370µm Chip thickness: 220±20µm. Pad size: φ100µm ABSOLUTE MAXIMUM RATING Symbol Parameter Value Unit VCBO Collector to Base Voltage 20 V VCEO Collector to Emitter Voltage 12 V VEBO Emitter to Base Voltage 3.0 V IC Collector Current 100 mA Ptot Total Power Dissipation 200 mW Tj Junction Temperature 150 °C Tstg Storage Temperature −65 to +150 °C ELECTRICAL CHARACTERISTICS o Tj = 25 C unless otherwise specified Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current VCB=10V, IE=0mA - - 1.0 µA IEBO Emitter Cut-off Current VEB=1.0V, IC=0mA - - 1.0 µA hFE DC Current Gain VCE =10V, IC=20mA 50 120 250 nA http://www.belling.com.cn -1Total 2 Pages 8/18/2006 BLH3355 PATTERN DRAWING E E B B (0.8µm design) http://www.belling.com.cn (0.6µm design ) -2Total 2 Pages 8/18/2006