PHILIPS BTA216X

DISCRETE SEMICONDUCTORS
DATA SHEET
BTA216X series D, E and F
Three quadrant triacs
guaranteed commutation
Product specification
April 2002
NXP Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA216X series D, E and F
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated guaranteed commutation triacs
in a full pack, plastic envelope intended for
use in motor control circuits or with other
highly inductive loads. These devices
balance the requirements of commutation
performance and gate sensitivity. The
"sensitive gate" E series and "logic level" D
series are intended for interfacing with low
power drivers, including micro controllers.
PINNING - SOT186A
PIN
SYMBOL
PARAMETER
BTA216XBTA216XBTA216XRepetitive peak off-state voltages
RMS on-state current
Non-repetitive peak on-state
current
VDRM
IT(RMS)
ITSM
PIN CONFIGURATION
MAX.
UNIT
600D
600E
600F
600
V
16
140
A
A
SYMBOL
DESCRIPTION
case
1
main terminal 1
2
main terminal 2
3
gate
T2
T1
G
1 2 3
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VDRM
Repetitive peak off-state
voltages
IT(RMS)
RMS on-state current
ITSM
Non-repetitive peak
on-state current
I2t
dIT/dt
IGM
PGM
PG(AV)
Tstg
Tj
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate power
Average gate power
CONDITIONS
full sine wave;
Ths ≤ 38 ˚C
full sine wave;
Tj = 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
ITM = 20 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
over any 20 ms
period
Storage temperature
Operating junction
temperature
MIN.
MAX.
UNIT
-
6001
V
-
16
A
-
140
150
98
100
A
A
A2s
A/µs
-
2
5
0.5
A
W
W
-40
-
150
125
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
April 2002
1
Rev 2.000
NXP Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA216X series D, E and F
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Visol
R.M.S. isolation voltage from all
three terminals to external
heatsink
f = 50-60 Hz; sinusoidal
waveform;
R.H. ≤ 65% ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN.
TYP.
MAX.
UNIT
-
-
2500
V
-
10
-
pF
MIN.
TYP.
MAX.
UNIT
-
55
4.0
5.5
-
K/W
K/W
K/W
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-hs
Thermal resistance
junction to heatsink
Rth j-a
Thermal resistance
junction to ambient
full or half cycle
with heatsink compound
without heatsink compound
in free air
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
BTA216X-
2
IGT
Gate trigger current
IL
Latching current
IH
Holding current
VD = 12 V; IT = 0.1 A
T2+ G+
T2+ GT2- GVD = 12 V; IGT = 0.1 A
T2+ G+
T2+ GT2- GVD = 12 V; IGT = 0.1 A
MAX.
UNIT
...D
...E
...F
-
5
5
5
10
10
10
25
25
25
mA
mA
mA
-
15
25
25
25
30
30
30
40
40
mA
mA
mA
-
15
25
30
mA
...D, E, F
VT
VGT
On-state voltage
Gate trigger voltage
ID
Off-state leakage current
IT = 20 A
VD = 12 V; IT = 0.1 A
VD = 400 V; IT = 0.1 A;
Tj = 125 ˚C
VD = VDRM(max); Tj = 125 ˚C
0.25
1.5
1.5
-
V
V
V
-
0.5
mA
2 Device does not trigger in the T2-, G+ quadrant.
April 2002
2
Rev 2.000
NXP Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA216X series D, E and F
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
dVD/dt
Critical rate of rise of
off-state voltage
dIcom/dt
Critical rate of change of
commutating current
dIcom/dt
Critical rate of change of
commutating current
April 2002
CONDITIONS
MIN.
MAX.
UNIT
BTA216X-
...D
...E
...F
VDM = 67% VDRM(max);
Tj = 110 ˚C; exponential
waveform; gate open
circuit
VDM = 400 V; Tj = 125 ˚C;
IT(RMS) = 16 A;
dVcom/dt = 10V/µs; gate
open circuit
VDM = 400 V; Tj = 125 ˚C;
IT(RMS) = 16 A;
dVcom/dt = 0.1V/µs; gate
open circuit
30
60
70
-
V/µs
2.5
6.2
18
-
A/ms
12
20
50
-
A/ms
3
Rev 2.000
NXP Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
25
BTA216X series D, E and F
Ths(max) / C
Ptot / W
25
20
IT(RMS) / A
BT139X
= 180
20
38 C
45
120
1
15
90
15
65
60
10
30
10
85
5
105
0
0
5
10
IT(RMS) / A
5
125
20
15
0
-50
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
1000
0
50
Ths / C
100
150
Fig.4. Maximum permissible rms current IT(RMS) ,
versus heatsink temperature Ths.
ITSM / A
50
IT(RMS) / A
40
dI T /dt limit
30
100
20
I TSM
IT
T
10
time
Tj initial = 25 C max
10
10us
100us
1ms
T/s
10ms
0
0.01
100ms
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
150
100
1.6
ITSM
T
10
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Ths ≤ 38˚C.
ITSM / A
IT
0.1
1
surge duration / s
VGT(Tj)
VGT(25 C)
1.4
time
Tj initial = 25 C max
1.2
1
50
0.8
0.6
0
1
10
100
Number of cycles at 50Hz
0.4
-50
1000
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
April 2002
0
50
Tj / C
100
150
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
4
Rev 2.000
NXP Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA216X series D, E and F
IGT(Tj)
IGT(25°C)
50
3
T2+ G+
T2+ GT2- G-
2.5
Tj = 125 C
Tj = 25 C
typ
40
2
BT139
IT / A
max
Vo = 1.195 V
Rs = 0.018 Ohms
30
1.5
20
1
10
0.5
0
-50
0
50
Tj/°C
100
0
150
0.5
1
1.5
VT / V
2
2.5
3
Fig.10. Typical and maximum on-state characteristic.
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
3
0
IL(Tj)
IL(25 C)
10
Zth j-hs (K/W)
with heatsink compound
without heatsink compound
2.5
1
unidirectional
bidirectional
2
0.1
1.5
P
D
1
tp
0.01
0.5
t
0
-50
0
50
Tj / C
100
0.001
10us
150
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
3
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
dIcom/dt (A/ms)
IH(Tj)
IH(25C)
100
F TYPE
E TYPE
D TYPE
2.5
2
10
1.5
1
0.5
0
-50
1
0
50
Tj / C
100
20
150
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
April 2002
40
60
80
Tj/˚C
100
120
140
Fig.12. Minimum, critical rate of change of
commutating current dIcom/dt versus junction
temperature, dVcom/dt = 10V/µs.
5
Rev 2.000
NXP Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA216X series D, E and F
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
4.6
max
3.2
3.0
2.9 max
2.8
Recesses (2x)
2.5
0.8 max. depth
6.4
15.8
max.
19
max.
15.8
max
seating
plane
3 max.
not tinned
3
2.5
13.5
min.
1
0.4
2
3
M
1.0 (2x)
0.6
2.54
0.9
0.7
0.5
2.5
5.08
1.3
Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
April 2002
6
Rev 2.000
NXP Semiconductors
Legal information
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
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2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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