bt152b_series

DISCRETE SEMICONDUCTORS
DATA SHEET
BT152B series
Thyristors
Product specification
September 1997
1;3 Semiconductors
Product specification
Thyristors
GENERAL DESCRIPTION
Glass passivated thyristors in a plastic
envelope suitable for surface
mounting, intended for use in
applications
requiring
high
bidirectional
blocking
voltage
capability and high thermal cycling
performance. Typical applications
include motor control, industrial and
domestic lighting, heating and static
switching.
PINNING - SOT404
PIN
BT152B series
QUICK REFERENCE DATA
SYMBOL
VDRM,
VRRM
IT(AV)
IT(RMS)
ITSM
PARAMETER
MAX. MAX. MAX. UNIT
BT152BRepetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
400R
450
600R
650
800R
800
V
13
20
200
13
20
200
13
20
200
A
A
A
PIN CONFIGURATION
SYMBOL
DESCRIPTION
mb
1
cathode
2
anode
3
gate
mb
a
k
2
anode
1
g
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VDRM
Repetitive peak off-state
voltages
IT(AV)
IT(RMS)
ITSM
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
I2t
dIT/dt
IGM
VGM
VRGM
PGM
PG(AV)
Tstg
Tj
CONDITIONS
half sine wave; Tmb ≤ 103 ˚C
all conduction angles
half sine wave; Tj = 25 ˚C prior to
surge
t = 10 ms
t = 8.3 ms
t = 10 ms
ITM = 50 A; IG = 0.2 A;
dIG/dt = 0.2 A/μs
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature
MIN.
MAX.
UNIT
-
-400R -600R -800R
4501
6501
800
V
-
13
20
A
A
-
200
220
200
200
A
A
A2s
A/μs
-40
-
5
5
5
20
0.5
150
125
A
V
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/μs.
September 1997
1
Rev 1.100
1;3 Semiconductors
Product specification
Thyristors
BT152B series
THERMAL RESISTANCES
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance
junction to mounting base
Thermal resistance
minimum footprint, FR4 board
junction to ambient
Rth j-a
CONDITIONS
MIN.
TYP.
MAX.
UNIT
-
-
1.1
K/W
-
55
-
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IGT
IL
IH
VT
VGT
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
ID, IR
Off-state leakage current
VD = 12 V; IT = 0.1 A
VD = 12 V; IGT = 0.1 A
VD = 12 V; IGT = 0.1 A
IT = 40 A
VD = 12 V; IT = 0.1 A
VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C
VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C
0.25
-
3
25
15
1.4
0.6
0.4
0.2
32
80
60
1.75
1.5
1.0
mA
mA
mA
V
V
V
mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dVD/dt
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform gate open circuit
VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/μs;
ITM = 40 A
VD = 67% VDRM(max); Tj = 125 ˚C;
ITM = 50 A; VR = 25 V; dITM/dt = 30 A/μs;
dVD/dt = 50 V/μs; RGK = 100 Ω
200
300
-
V/μs
-
2
-
μs
-
70
-
μs
tgt
tq
September 1997
2
Rev 1.100
1;3 Semiconductors
Product specification
Thyristors
25
BT152B series
Ptot / W
BT152
conduction
angle
degrees
30
60
90
120
180
20
15
Tmb(max) / C
ITSM / A
250
97.5
BT152
form
factor
a
a = 1.57
4
2.8
2.2
1.9
1.57
1.9
103
200
108.5
150
114
100
time
T
Tj initial = 25 C max
2.2
2.8
ITSM
IT
4
10
119.5
5
0
0
5
50
125
15
10
0
IT(AV) / A
Fig.1. Maximum on-state dissipation, Ptot, versus
average on-state current, IT(AV), where
a = form factor = IT(RMS)/ IT(AV).
1000
10
100
Number of half cycles at 50Hz
1000
Fig.4. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
BT152
ITSM / A
1
50
BT152
IT(RMS) / A
dI T /dt limit
40
30
100
20
I TSM
IT
10
time
T
Tj initial = 25 C max
10
10us
100us
0
0.01
10ms
1ms
0.1
1
surge duration / s
T/s
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 103˚C.
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 10ms.
25
BT152
IT(RMS) / A
1.6
103 C
20
10
VGT(Tj)
VGT(25 C)
BT151
1.4
1.2
15
1
10
0.8
5
0
-50
0.6
0
50
Tmb / C
100
0.4
-50
150
Fig.3. Maximum permissible rms current IT(RMS) ,
versus mounting base temperature Tmb.
September 1997
0
50
Tj / C
100
150
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
3
Rev 1.100
1;3 Semiconductors
Product specification
Thyristors
3
BT152B series
IGT(Tj)
IGT(25 C)
50
BT152
BT152
IT / A
Tj = 125 C
Tj = 25 C
2.5
40
2
30
Vo = 1.12 V
Rs = 0.015 ohms
max
typ
1.5
20
1
10
0.5
0
-50
0
50
Tj / C
100
0
150
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
3
IL(Tj)
IL(25 C)
0
0.5
1
VT / V
1.5
2
Fig.10. Typical and maximum on-state characteristic.
10
BT145
2.5
BT152
Zth j-mb (K/W)
1
2
0.1
1.5
P
D
1
tp
0.01
0.5
t
0
-50
0
50
Tj / C
100
0.001
10us
150
IH(Tj)
IH(25 C)
1ms
10ms
tp / s
0.1s
1s
10s
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
3
0.1ms
10000
BT152
dVD/dt (V/us)
2.5
RGK = 100 Ohms
1000
2
gate open circuit
1.5
100
1
0.5
0
-50
0
50
Tj / C
100
10
150
50
100
150
Tj / C
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
September 1997
0
4
Rev 1.100
1;3 Semiconductors
Product specification
Thyristors
BT152B series
MECHANICAL DATA
Dimensions in mm
4.5 max
1.4 max
10.3 max
Net Mass: 1.4 g
11 max
15.4
2.5
0.85 max
(x2)
0.5
2.54 (x2)
Fig.13. SOT404 : centre pin connected to mounting base.
Notes
1. Epoxy meets UL94 V0 at 1/8".
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
Fig.14. SOT404 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
September 1997
5
Rev 1.100
NXP Semiconductors
Legal information
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DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
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and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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