Inchange Semiconductor Product Specification BU100 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage capability APPLICATIONS ·For horizontal deflection output stage of CTV receivers and high voltalge, fast switching and industrial applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A ICM Collector current-peak 15 A PD Total power dissipation 15 W Tj Junction temperature 200 ℃ Tstg Storage temperature -55~200 ℃ TC=75℃ Inchange Semiconductor Product Specification BU100 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0 60 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 7 V VCE(sat) Collector-emitter saturation voltage IC=8A ;IB=2.5A 3.3 V VBE(sat) Base-emitter saturation voltage IC=8A ;IB=2.5A 2.2 V ICBO Collector cut-off current VCB=120V; IE=0 10 μA IEBO Emitter cut-off current VEB=7V; IC=0 10 μA hFE DC current gain IC=2A ; VCE=2V 40 Transition frequency IC=0.5A ; VCE=10V;f=1MHz 0.1 fT CONDITIONS 2 MIN TYP. MAX UNIT 90 MHz Inchange Semiconductor Product Specification BU100 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3