Inchange Semiconductor Product Specification 2SC940 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High current capability ・Wide area of safe operation APPLICATIONS ・For B/W TV horizontal deflection application PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 导体 半 电 固 Absolute maximum ratings(Ta=25℃) SYMBOL OND VALUE UNIT 200 V Open base 90 V Open collector 7 V Collector current 7.5 A ICM Collector current-peak 15 A PT Total power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ VCBO VCEO VEBO IC PARAMETER R O T UC Collector-base voltage IC M E ES G N A INCH Collector-emitter voltage Emitter-base voltage CONDITIONS Open emitter Tmb=25℃ Inchange Semiconductor Product Specification 2SC940 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0 90 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V Collector-emitter saturation voltage IC=5A; IB=0.5A 1.5 V ICBO Collector cut-off current VCB=90V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=5A ; VCE=5V Transition frequency IC=0.5A ; VCE=10V VCEsat fT CONDITIONS 导体 半 电 固 15-35 Q M E S GE P N A H INC 25-45 35-70 2 TYP. 15 MAX UNIT 70 20 R O T UC D N O IC hFE-2 Classifications O MIN MHz Inchange Semiconductor Product Specification 2SC940 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3