CED01N6/CEU01N6 PRELIMINARY N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 600V , 1.3A , RDS(ON)=7.5 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-251 & TO-252 package. G D G S CEU SERIES TO-252AA(D-PAK) G D S S CED SERIES TO-251(l-PAK) ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Symbol Limit Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS Ć 30 V A A A Parameter Drain Current-Continuous (Tc=25 C) -Continuous (Tc=100 C) Drain Current-Pulsed IDM 1.3 0.85 3.9 Drain-Source Diode Forward Current IS 1.3 A Maximum Power Dissipation @Tc=25 C Derate above 25 C PD 35 W W/ C ID Operating and Storage Temperautre Range TJ, TSTG 0.29 -55 to 150 C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case RįJC 3.5 C/W Thermal Resistance, Junction-to-Ambient RįJA 50 C/W 1 CED01N6/CEU01N6 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter Condition Symbol Min Typ Max Unit a DRAIN-SOURCE AVALANCHE RATING Single Pulse Drain-Source Avalanche Energy EAS Maximum Drain-Source Avalanche Current IAS VDD =50V, L=95mH RG=25Ω 90 mJ 1.3 A OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V,ID = 250µA Zero Gate Voltage Drain Current IDSS VDS = 600V, VGS = 0V Gate-Body Leakage IGSS VGS = Ć30V, VDS = 0V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA Drain-Source On-State Resistance RDS(ON) VGS =10V, ID = 0.65A 5.5 gFS VDS = 50V, ID = 0.65A 0.9 tD(ON) VDD = 300V, ID = 1A, VGS = 10V RGEN=25Ω 6 18 ns 25 50 ns 10 30 ns 600 V 25 µA Ć100 nA ON CHARACTERISTICS a Forward Transconductance 2 4 V 7.5 Ω S b SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time tr tD(OFF) Fall Time tf 20 50 ns Total Gate Charge Qg 8 12 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS =480V, ID = 1A, VGS =10V 2 1.3 nC 3 nC CED01N6/CEU01N6 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter Min Typ Max Unit Condition Symbol DYNAMIC CHARACTERISTICS b Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDS =25V, VGS = 0V f =1.0MHZ DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage 200 PF 30 PF 10 PF a VGS = 0V, Is =1.3A VSD 1.5 Notes a.Pulse Test:Pulse Widthś 300ijs, Duty Cycle ś 2%. b.Guaranteed by design, not subject to production testing. 1.2 VGS=10,9,8,7V ID, Drain Current (A) ID, Drain Current(A) 1.0 0.8 0.6 VGS=6V 0.4 VGS=5V 0.2 1 2 3 4 5 -55 C 0.01 2 0 0 150 C 0.1 6 1.VDS=40V 2.Pulse Test 25 C 4 6 8 10 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 3 V CED01N6/CEU01N6 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 300 C, Capacitance (pF) 250 Ciss 200 150 Coss 100 50 Crss 0 0 5 10 15 20 25 3.0 ID=0.65A VGS=10V 2.5 2.0 1.5 1.0 0.5 0.0 -100 BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.30 VDS=VGS ID=250͋A 1.10 1.0 0.90 0.80 0.70 0 25 50 150 200 75 100 125 150 1.15 ID=250͋A 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 6. Breakdown Voltage Variation with Temperature Figure 5. Gate Threshold Variation with Temperature 2 1 VGS=0V VDS=50V Is, Source-drain current (A) gFS, Transconductance (S) 100 Figure 4. On-Resistance Variation with Temperature Figure 3. Capacitance 0.60 -50 -25 50 TJ, Junction Temperature( C) VDS, Drain-to Source Voltage (V) 1.20 0 -50 0.75 0.5 0.25 1 0.1 0 0 0.25 0.5 0.75 1.0 0.4 IDS, Drain-Source Current (A) 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current 4 Figure 8. Body Diode Forward Voltage Variation with Source Current CED01N6/CEU01N6 10 VGS, Gate to Source Voltage (V) 15 VDS=480V ID=1A 100µs ID, Drain Current (A) 12 9 6 3 0 0 3 6 1ms R ( DS ON )L im it 10ms DC 0.1 0.01 12 9 1 TC=25C Tj=150 C Single Pulse 1 Qg, Total Gate Charge (nC) 500 1000 100 10 VDS, Drain-Source Voltage (V) Figure 9. Gate Charge Figure 10. Maximum Safe Operating Area VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 12. Switching Waveforms Figure 11. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 2 1 D=0.5 0.2 0.1 PDM 0.1 t1 0.05 t2 0.02 0.01 1. RįJC (t)=r (t) * RįJC 2. RįJC=See Datasheet 3. TJM-TC = P* RįJC (t) 4. Duty Cycle, D=t1/t2 Single Pulse 0.01 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (msec) Figure 13. Normalized Thermal Transient Impedance Curve 5 10000