CHA6558-99F RoHS COMPLIANT 28-32GHz HPA 2W GaAs Monolithic Microwave IC D4 G4 D3 G3 D1 RF IN D4 G4 D3 G3 G2 RF OUT G1 The CHA6558-99F is a monolithic four stages GaAs high power amplifier, designed for Ka-Band applications. The circuit is dedicated to telecommunication and VSAT, SATCOM and is also well suited for a wide range of microwave applications and systems. It is developed on a robust 0.15µm gate length pHEMT process, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. D2 Description Main Features 39 Linear gain (dB) / Output Power (dBm) & PAE (%) @ saturation (dBm) ■ Broadband performances: 28-32GHz ■ 21dB Linear Gain ■ 33dBm output power @3dB compression. ■ 23% PAE@ 3dB compression ■ DC bias: Vd=6Volt@Id=1.4A ■ Chip size 3.46x2.71x0.07mm 37 Pout @Saturation 35 33 31 29 27 PAE @Saturation 25 23 21 Linear Gain 19 17 15 28 29 30 31 32 Frequency (GHz) Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Min Typ Max Unit Freq Frequency range 28 32 GHz Gain Linear Gain 21 dB Pout Output Power @3dB compression 33 dBm PAE Power added efficiency 23 % ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions! Ref. DSCHA6558-QAG2251 - 07 Sep 12 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - BP46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHA6558-99F 28-32GHz HPA 2W Electrical Characteristics Tamb = +25°C, Vd = +6V Vg adjusted for quiescent current =1.4A Symbol Parameter Min Typ Max Unit Freq Operating frequency range 28 32 GHz G Small signal gain 21 dB P1dB Output power @ 1dB compression 33.2 dBm Psat Saturated output power 33.4 dBm PAE Power added efficiency at saturation 23 % Rlin Input return loss -8 dB Rlout Output return loss -6 dB Id Supply quiescent drain current 1.4 A Id_sat Drain current @ saturation 1.8 A Vg Negative gate voltage (G1,G2,G3,G4 pads) ≈-0.5 V These values are representative of on test fixture measurements a bonding wire of typically 0.3nH at the RF ports. Absolute Maximum Ratings (1) Tamb.= +25°C Symbol Parameter Values Unit Cmp Gain compression level 5 dB Vd Drain bias voltage ( D1,D2 ,D3 ,D4) 7 V Id Supply quiescent current 1.6 A Vg Gate bias voltage -2 to -0.2 V (2) Pin Maximum peak input power overdrive +18 dBm (3) Tj Junction temperature 175 °C Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +150 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. (3) Thermal Resistance channel to ground paddle = 6.2°C/W for T= +85°C. Typical Bias Conditions Tamb.= +25°C Symbol Pad No Parameter Vd D1,D2,D3,D4 DC drain Voltage Id DC Drain current controlled with vg Vg G1,G2,G3,G4 DC gate Voltage (1) To be adjusted until to obtain Id:1.4A Ref. : DSCHA6558-QAG2251 - 07 Sep 12 2/10 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Values 6 1.4 ≈-0.5(1) Unit V A V Specifications subject to change without notice CHA6558-99F 28-32GHz HPA 2W Typical S parameters in test fixture Measurements Tamb.= +25°C, Vd = +6V, Id = 1.4A Linear Gain versusFrequency Frequency Linear gain&&RLosses Rlosses versus 30 Linear Gain & Return losses (dB) 25 dBS21 20 dBS11 15 dBS22 10 5 0 -5 -10 -15 -20 26 27 28 29 30 31 32 33 34 35 36 Frequency (GHz) Output Power @1dB compression & saturation versus frequency Output Power @ saturation versus Frequency Output Power @ saturation (dBm) 39 37 35 33 31 Pout @ saturation 29 27 25 28 29 30 31 32 33 Frequency (GHz) Ref. DSCHA6558-QAG2251 - 07 Sep 12 3/10 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA6558-99F 28-32GHz HPA 2W Typical S parameters in test fixture Measurements Tamb.= +25°C, Vd = +6V, Id = 1.4A Drain current @ saturation versus Frequency Drain Current @ saturation (A) 2 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 Drain current @ Saturation 1.1 1 28 29 30 31 32 33 Frequency (GHz) PAE @ saturation versus Frequency PAE (%) @ saturation Power added efficiency @ 1dB compression & saturation versus frequency 35 33 31 29 27 25 23 21 19 17 15 13 11 9 7 5 PAE @ saturation 28 29 Ref. : DSCHA6558-QAG2251 - 07 Sep 12 30 31 Frequency (GHz) 4/10 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 32 33 Specifications subject to change without notice CHA6558-99F 28-32GHz HPA 2W Typical Measurement in test fixture versus Temperature Linear gain versus Frequency & Temperature 40 35 30 Linear Gain (dB) 25 20 15 10 5 0 T=+20°C -5 T=-40°C -10 T=+85°C -15 -20 26 27 28 29 30 31 32 33 34 35 36 Frequency (GHz) Output return loss versus Frequency & Temperature 0 0 -5 -5 Output return loss (dB) Input return loss (dB) Input Return Loss versus Frequency & Temperature -10 -15 -20 T=+20°C -25 -10 -15 -20 T=+20°C -25 T=+85°C T=+85°C T=-40°C -30 T=-40°C -30 26 27 28 29 30 31 32 33 34 35 36 26 Frequency (GHz) Ref. DSCHA6558-QAG2251 - 07 Sep 12 27 28 29 30 31 32 33 34 35 36 Frequency (GHz) 5/10 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA6558-99F 28-32GHz HPA 2W Typical Measurement in test fixture versus Temperature Output Power versus Frequency & Temperature Output Power @ saturation versus Frequency & Temperature 40 39 38 37 36 Output Power (dBm) 35 34 33 32 31 30 29 +25°C 28 -40°C +85°C 27 26 25 28 29 30 31 32 33 Frequency (GHz) Quiescent current versus temperature Drain current @ saturation versus temperature 2 +25 °C -40 °C +85 °C Quiescent current (A) 1.8 Drain Current @ saturation (A) 1.9 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 28 29 30 31 Frequency (GHz) 32 33 2.5 2.4 2.3 2.2 2.1 2 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 +25°C 28 29 -40°C +85°C 30 31 Frequency (GHz) 32 33 PAE @saturation versus Temperature Power added efficiency (%) Power added efficiency @ saturation versus frequency & temperature 34 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 +25°C 28 29 -40°C 30 31 Frequency (GHz) Ref. : DSCHA6558-QAG2251 - 07 Sep 12 +85°C 32 33 6/10 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA6558-99F 28-32GHz HPA 2W Mechanical data 2 3 4 5 6 7 8 9 1 10 11 12 22 21 20 19 18 17 16 15 14 13 Units: µm Chip width and length are given with a tolerance of ±35µm Chip thickness = 70µm +/- 10 µm RF pads (1, 12) = 120 x 150µm² DC pads (2, 3, 4, 5, 6, 7, 8, 9, 10, 14, 15, 17, 18, 19, 20, 21, 22) = 100 x 100µm² DC pads (11, 13) = 200 x 100µm² Pin number 1 3, 6, 10, 14,18, 21 22 2 4, 20 5, 19 7, 17 8, 16 9, 15 11, 13 12 Ref. DSCHA6558-QAG2251 - 07 Sep 12 Pin name IN M G1 D1 G2 D2 G3 D3 G4 D4 OUT 7/10 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Description Input RF Not connected Gate Stage1 Drain stage1 Gate Stage2 Drain stage2 Gate Stage3 Drain stage3 Gate Stage4 Drain stage4 Output RF Specifications subject to change without notice CHA6558-99F 28-32GHz HPA 2W Recommended Chip assembly & Bonding Diagram -For best thermal and electrical performances, the chip should be brazed on a metal base plate. The RF and DC connections should be done according to the following table: - DC drain voltage (Pads: D*): Connection of all the pads is mandatory excepted Pad D2 which can be used on one side only. (Pin number 5 or 19) -DC gate voltage: (Pads G*): Connection of all the pads is mandatory excepted Pads G2 & G3 (Pin number 4 or 20 for G2 & Pin number 7 or 17 for G3) which can be used on one side only. Note: Connection of the pin 19 (other possibility to connect D2) is not mandatory if connection of pin 5 has been used, nevertheless it is necessary to add the 120pF and 10nF external capacitor. Recommended circuit bonding table Port Connection External capacitor Inductance (Lbonding) = 0.3nH IN 2 gold wires with diameter of 25µm (550µm max) Inductance (Lbonding) = 0.3nH OUT 2 gold wires with diameter of 25µm (550µm max) G* C1 ~ 120pF, C2 ~ 10nF Inductance 1nH D* (1) C1 ~ 120pF, C2 ~ 10nF Inductance 1nH (1) 2 gold wires with diameter of 25µm are necessary to connect D4 Ref. : DSCHA6558-QAG2251 - 07 Sep 12 8/10 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA6558-99F 28-32GHz HPA 2W DC SCHEMATIC HPA : 6V, 1.4A ESD protections exist on RF accesses. Note that supply feed should be bypassed. ESD protections are also implemented on each gate access. It is mandatory to provide a good external DC decoupling on the PC board, as close as possible to the chip. Ref. DSCHA6558-QAG2251 - 07 Sep 12 9/10 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA6558-99F 28-32GHz HPA 2W Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS products. Recommended environmental management UMS products are compliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006. More environmental data are available in the application note AN0019 also available at http://www.ums-gaas.com. Ordering Information Chip form: CHA6558-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA6558-QAG2251 - 07 Sep 12 10/10 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice