CHA2190 20-30GHz Low Noise Amplifier self biased GaAs Monolithic Microwave IC Description The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. 18 14 Main Feature § 10 Broad band performance 20-30GHz 2.2dB noise figure 15dB gain, ± 0.5dB gain flatness Low DC power consumption, 50mA 20dBm 3rd order intercept point Chip size : 1.670 x 1.03x 0.1mm dBSij & NF ( dB ) § § § § § 6 2 -2 dBS11 -6 dBS21 dBS22 NF -10 -14 -18 -22 -26 14 16 18 20 22 24 26 28 30 32 34 Frequency ( GHz ) Main Characteristics On wafer typical measurement Tamb = +25°C Symbol Parameter NF Noise figure at freq : 40GHz G Gain ∆G Min 13 Typ Max Unit 2.2 3 dB 15 ± .0.5 Gain flatness dB ±1 dB ESD Protections : Electrostatic discharge sensitive device observe handling precautions ! Ref : DSCHA21902036 -05-Feb.-02- 1/9 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 36 20-30GHz Low Noise Amplifier CHA2190 Electrical Characteristics Tamb = +25°C, Vd = +4V (On wafer) Symbol Fop G Parameter Min Operating frequency range 20 Gain (1) 13 Typ Max Unit 30 Ghz 15 dB ∆G Gain flatness (1) ± 0.5 ±1 dB NF Noise figure (1) 2.2 3 dB VSWRin Input VSWR (1) 3.0:1 VSWRout Ouput VSWR (1) 3.0:1 IP3 3rd order intercept point Output power at 1dB gain compression (2) P1dB Id Drain bias current (3) 20 dBm 11 dBm 50 70 mA (1) These values are representative of wafer measurements without bonding wire at the RF ports. (2)This value is a typical value when Vd=4V Vg1=Vg2=0V or not connected and can be increased See chip biasing option page 8 (3) This current is the typical value for low noise and low current consumption biasing : Vd=4V , Vg1=Vg2=0V or not connected. Absolute Maximum Ratings (4) Tamb = +25°C Symbol Parameter Values Unit Vd Drain bias voltage (6) 4.5 V Vg Vg1 and Vg2 max +1 V Pin Maximum peak input power overdrive (5) 15 dBm Top Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +125 °C (4) Operation of this device above anyone of these paramaters may cause permanent damage. (5) Duration < 1s. (6) See chip biasing options page 8/9 Ref : DSCHA21902036 -05-Feb.-02- 2/9 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 20-30GHz Low Noise Amplifier CHA2190 Typical Results Chip Typical Response ( On wafer Scattering parameters ) : Tamb = +25°C Vd=4V Id=+50mA Freq dBS11 PS11 dBS12 PS12 dBS21 PS21 dBS22 PS22 mod. pha. mod. pha. mod. pha. mod. pha. GHz dB deg. dB deg. dB deg. dB deg. 2.00 5.00 8.00 9.00 10.00 11.00 12.00 13.00 14.00 15.00 16.00 17.00 18.00 19.00 20.00 21.00 22.00 23.00 24.00 25.00 26.00 27.00 28.00 29.00 30.00 31.00 32.00 33.00 34.00 35.00 36.00 37.00 38.00 39.00 40.00 -0.37 -0.53 -0.59 -0.66 -0.79 -1.00 -1.26 -1.33 -1.39 -1.79 -3.06 -5.59 -9.90 -13.09 -14.29 -14.48 -14.71 -14.92 -15.42 -16.38 -16.55 -16.33 -14.66 -13.19 -11.49 -10.10 -8.49 -7.01 -5.76 -4.56 -3.67 -3.02 -2.57 -2.18 -1.82 -74.86 -151.19 157.19 141.20 125.32 109.39 93.11 73.86 52.92 26.36 -7.27 -46.11 -88.64 -132.63 -179.39 143.23 118.23 100.80 87.80 78.89 77.15 77.12 71.74 61.95 46.38 25.97 1.99 -24.08 -50.88 -78.91 -103.63 -125.99 -146.23 -162.01 -178.56 -70.84 -61.97 -63.84 -64.59 -62.91 -62.00 -61.10 -54.13 -45.84 -41.70 -38.40 -36.52 -34.29 -34.84 -34.82 -34.24 -33.88 -33.65 -32.93 -32.22 -31.63 -30.73 -30.72 -29.96 -29.74 -29.29 -29.08 -29.25 -28.83 -29.98 -31.24 -31.84 -35.07 -35.66 -36.87 -53.91 -91.19 -162.71 167.32 152.65 165.51 65.75 -36.78 -88.69 -126.55 -159.80 168.18 139.94 112.28 93.31 79.42 62.77 47.72 34.93 20.45 3.26 -11.52 -31.79 -45.41 -65.11 -84.32 -104.88 -127.09 -147.90 -177.63 165.34 144.11 127.07 98.71 109.75 -29.15 -54.49 -21.34 -14.41 -7.52 -1.20 4.21 8.62 12.13 14.89 16.82 17.53 17.39 16.98 16.44 15.90 15.50 15.38 15.30 15.22 15.22 15.24 15.28 15.27 15.22 15.13 14.92 14.46 13.73 12.61 11.09 9.30 7.29 5.36 3.19 56.50 149.52 -178.25 176.87 163.27 140.92 111.98 79.00 43.65 7.60 -31.20 -68.31 -102.75 -131.32 -156.45 -179.20 160.71 141.01 121.05 101.34 81.83 61.81 41.14 20.38 -1.31 -23.85 -47.58 -72.54 -98.45 -124.59 -149.58 -173.89 163.92 143.17 121.75 -2.03 -4.15 -5.97 -6.38 -7.07 -8.02 -9.38 -11.25 -14.06 -16.84 -19.09 -17.25 -16.27 -17.29 -18.70 -21.00 -20.27 -20.10 -17.74 -16.09 -14.40 -13.10 -12.13 -11.55 -11.52 -11.39 -12.30 -13.60 -16.45 -22.00 -20.99 -17.26 -12.77 -10.42 -8.88 -84.36 -155.38 161.51 149.74 136.72 124.05 111.29 101.00 92.70 90.96 106.80 106.98 97.39 75.43 49.82 23.10 -12.66 -51.60 -76.68 -98.65 -114.01 -131.22 -145.23 -159.84 -175.03 171.38 155.28 135.95 111.53 75.08 -22.73 -69.71 -88.90 -108.31 -119.32 Ref : DSCHA21902036 -05-Feb.-02- 3/9 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 20-30GHz Low Noise Amplifier CHA2190 Typical Results Typical Gain , Matching and Noise Figure (On wafer Measurements) Tamb = +25°C Vd = 4V Vg1 and Vg2 non connected; Id = 50mA Typical gain slope versus temperature : -0.025dB/°C Typical noise figure slope versus temperature : 0.011dB/°C 18 18 14 14 dBS21 NF dBS11 10 dBS22 6 6 2 2 -2 -2 -6 -6 -10 -10 -14 -14 -18 -18 -22 -22 -26 -26 14 16 18 20 22 24 26 28 30 32 34 RLosses(dB) dBS21 & NF ( dB ) 10 36 Frequency ( GHz ) 24 22 20 18 16 14 12 10 8 6 4 2 0 120 Gain: Vd=4.5V Vg2=+1V 100 Gain: Vd=4V Gain: Vd=4V Vg2=-1V 80 Id( Vd=4.5V Vg2=+1V) 60 Id (Vd=4V) Id (Vd=4V Vg2=-1V) 40 NF : (all biasing options) 20 0 18 20 22 24 26 28 30 32 34 36 Frequency (GHz) Ref : DSCHA21902036 -05-Feb.-02- 4/9 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice Id (mA) Ga / NF (dB) Chip Typical Response (In test Jig ) 20-30GHz Low Noise Amplifier CHA2190 Circuit typical response (In test-Jig): Power measurements (Vd=4V) 15 GAIN dB(20GHz) GAIN dB(24GHz) 13 GAIN dB(28GHz) GAIN dB(30GHz) 19 11 GAIN dB(32GHz) POUT dBm (20GHz) 9 Gain (dB) POUT dBm (24GHz) POUT dBm (28GHz) 17 Output Power(dBm) 21 7 POUT dBm (30GHz) POUT dBm (32GHz) 5 15 3 1 13 -1 -3 11 -5 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 Input Power (dBm) Typical Output Power (Measurement in test Jig) 40 80 Id 70 (Vd=4.5V Vg2=+1V 32 60 Id 28 Id (Vd=4V) 50 (Vd=4V vg2=-1V 24 40 Gain P-1dB (Vd=4.5V Vg2=+1V) 20 Gain P-1dB (Vd=4V) 30 Gain P-1dB (Vd=4V Vg2=-1V) 16 20 12 10 8 0 P-1dB (Vd=4.5V Vg2=+1V) 4 Id (mA) P-1dB (dBm) / Gain (P-1dB) dB 36 -10 P-1dB (Vd=4V) P-1dB (Vd=4.5V Vg2=+1V) 0 -20 18 19 20 21 22 23 24 25 26 27 Frequency (GHz) 28 29 30 31 32 Tamb = +25°C These values are representative of the package assembly with input and output bonding. Typical Output power –1dB for typical biasing Ref : DSCHA21902036 -05-Feb.-02- 5/9 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 20-30GHz Low Noise Amplifier CHA2190 Mechanical data Chip schematic and Pad Identification Pad Size :100/100µm, chip thickness 100um Dimensions : 1670µm x 1030µm ± 35µm Ref : DSCHA21902036 -05-Feb.-02- 6/9 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 20-30GHz Low Noise Amplifier CHA2190 Typical Chip Assembly - * Nominal Input and Output bonding lenght :0.3 to 0.38nH for one 25µm bond wire. - Chip backside is DC and RF grounded Ref : DSCHA21902036 -05-Feb.-02- 7/9 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 20-30GHz Low Noise Amplifier CHA2190 Chip Biasing options Internal DC schematic This chip is self-biased, and flexibility is provided by the access to positive Vg. The internal DC electrical schematic is given in order to use these pads in a safe way. Absolute recommandations: N°1 : Do not exceed Vds = 3.5 Volt ( Vds: internal Drain to Source voltage ). N°2 : Do not bias in such a way that Vgs* becomes positive. (Vgs :internal Gate to Source voltage ) Typical biasing table and Typical results in test Jig at 40 GHz 40GHz IN TEST Jig Vds ( V) Vg1 (V) Standard Low Noise High linearity Low noise /low current consumption Switch off Ref : Vg2 (V) Id (mA) Typical NF(dB) Typical Gain (dB) Typical P-1dB (dB) Typical Psat (dB) 4 NC NC 50 2.2 15 11 13 4.5 NC 1 60 2.2 15 12 14 4 NC -1 40 2.2 15 9.5 12 3.5 -1 -8 0 X X X X DSCHA21902036 -05-Feb.-02- 8/9 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 20-30GHz Low Noise Amplifier CHA2190 Ordering Information Chip form : CHA2190-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref : DSCHA21902036 -05-Feb.-02- 9/9 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice