CHA2194 36-44GHz Low Noise Amplifier Self biased GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier, designed for 36GHz to 44GHz point to point and point to multipoint communication . The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. § Broad band performance 36-44GHz 3dB noise figure 19dB gain, ± 0.5dB gain flatness Low DC power consumption, 45mA 20dBm 3rd order intercept point Chip size : 1.670 x 0.970x 0.1mm Gain & NF ( dB ) § § § § § 25,00 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 15,00 5,00 -5,00 -15,00 dBS21 NF dBS11 dBS22 -25,00 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 52 54 56 Frequency ( GHz ) Main Characteristics On wafer typical measurement Tamb = +25°C Symbol Parameter NF Noise figure at freq : 40GHz G Gain ∆G Min 17 Typ Max Unit 3 4 dB 19 ± 0.5 Gain flatness dB ±1 dB ESD Protections : Electrostatic discharge sensitive device observe handling precautions ! Ref : DSCHA21942035 -04-Feb.-02 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 58 60 RLosses(dB) Main Feature 36-44GHz Low Noise Amplifier CHA2194 Electrical Characteristics Tamb = +25°C, Vd = +3,5V (On wafer) Symbol Fop G Parameter Min Operating frequency range 36 Gain (1) 17 ∆G Gain flatness (1) NF Noise figure (1) (freq: 36-40 GHz) Typ Max Unit 44 Ghz 19 ± 0.5 3 dB ±1 dB 4 dB VSWRin Input VSWR (1) 2.5:1 3.0:1 VSWRout Ouput VSWR (1) 2:5:1 3.0:1 IP3 3rd order intercept point P1dB Output power at 1dB gain compression Id Drain bias current (2) 8 20 dBm 10 dBm 45 75 mA (1) These values are representative of wafer measurements without bonding wire at the RF ports. (2) This current is the typical value for low noise and low current consumption biasing : Vd=3.5V , Vg12 and Vg3 not connected. Absolute Maximum Ratings (3) Tamb = +25°C Symbol Parameter Values Unit Vd Drain bias voltage (5) 4 V Vg Vg12 and Vg3 max +1 V Id Drain current 75 mA Pin Maximum peak input power overdrive (4) 15 dBm Top Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +125 °C (3) Operation of this device above anyone of these paramaters may cause permanent damage. (4) Duration < 1s. (5) See chip biasing options page 9 Ref : DSCHA21942035 -04-Feb.-02 2/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 36-44GHz Low Noise Amplifier CHA2194 Typical Result Chip Typical Response ( On wafer Scattering parameters ) : Tamb = +25°C Vd=3.5V Id=+42mA F(GHz) S11 2,00 4,00 6,00 8,00 10,00 12,00 14,00 16,00 18,00 20,00 22,00 24,00 25,00 26,00 27,00 28,00 29,00 30,00 31,00 32,00 33,00 34,00 35,00 3 6 ,0 0 3 7 ,0 0 3 8 ,0 0 3 9 ,0 0 4 0 ,0 0 4 1 ,0 0 4 2 ,0 0 4 3 ,0 0 4 4 ,0 0 45,00 46,00 47,00 48,00 49,00 50,00 mod dB -4,39 -3,92 -3,01 -2,33 -1,87 -1,57 -1,35 -1,25 -1,16 -1,09 -1,01 -0,99 -1,00 -1,05 -1,15 -1,42 -2,17 -4,74 -11,78 -17,20 -16,20 -17,00 -19,78 -20,49 -17,37 -14,90 -14,38 -14,17 -14,23 -14,45 -13,44 -11,65 -9,14 -6,61 -4,21 -3,45 -2,71 -2,35 S12 Pha deg -56,73 -86,19 -111,00 -132,18 -149,64 -164,59 -177,94 169,65 157,50 144,51 130,06 113,68 104,41 93,20 80,32 63,49 40,77 10,16 -12,14 17,23 20,67 -2,28 -48,40 -119,64 -175,00 1 4 8 ,1 9 1 1 9 ,4 0 9 9 ,7 8 8 1 ,4 1 6 8 ,0 4 5 4 ,3 1 3 7 ,4 4 15,96 -8,98 -34,87 -62,16 -84,52 -102,45 Ref : DSCHA21942035 -04-Feb.-02 mod dB -75,42 -68,73 -68,42 -62,78 -58,07 -54,16 -51,89 -52,93 -51,04 -49,77 -48,14 -47,48 -48,97 -48,69 -48,51 -49,95 -47,16 -44,24 -41,60 -41,18 -41,81 -39,78 -39,87 -39,25 -37,96 -36,53 -35,30 -33,63 -33,70 -32,62 -32,01 -31,08 -30,72 -31,56 -33,12 -35,95 -37,02 -38,27 S21 Pha deg 44,36 -0,07 -40,89 -61,43 -92,78 -118,46 -167,25 158,44 165,85 164,40 114,15 73,88 61,97 52,80 18,34 6,77 -37,23 -94,27 -147,89 175,51 148,47 125,02 112,63 9 8 ,4 5 8 6 ,4 5 7 6 ,6 1 5 7 ,4 6 3 8 ,2 6 2 0 ,3 7 5 ,4 9 -15,03 -35,85 -59,51 -86,95 -117,26 -136,86 -153,94 165,40 mod dB -37,71 -38,99 -38,00 -31,40 -22,10 -15,19 -11,48 -10,44 -11,48 -15,47 -22,72 -18,51 -10,74 -4,00 1,96 7,45 12,59 16,78 18,62 18,62 18,49 18,57 18,87 1 9 ,3 0 1 9 ,6 0 1 9 ,7 0 1 9 ,6 0 1 9 ,5 1 1 9 ,1 2 1 9 ,0 6 1 9 ,1 0 1 9 ,0 6 18,88 18,39 17,52 15,52 13,00 10,38 3/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 S22 Pha deg 179,84 144,86 82,75 -24,55 -68,40 -121,90 -177,68 129,48 84,35 49,64 64,72 144,50 152,58 142,49 125,50 100,83 70,07 28,35 -19,04 -57,49 -87,41 -113,67 -138,52 -164,01 1 7 0 ,4 4 1 4 3 ,8 2 1 1 8 ,7 1 9 4 ,3 1 7 0 ,5 6 4 6 ,8 4 2 2 ,8 0 -3,12 -30,61 -60,43 -91,46 -122,46 -148,98 -171,73 mod dB -0,11 -0,41 -0,87 -1,53 -2,33 -3,50 -4,77 -6,27 -8,13 -12,66 -16,87 -25,93 -35,08 -27,71 -25,75 -22,24 -25,05 -21,79 -15,03 -13,03 -12,36 -11,84 -11,68 -11,17 -10,94 -10,68 -10,97 -10,84 -10,39 -10,36 -9,76 -9,13 -9,22 -9,63 -10,19 -11,03 -10,81 -9,71 Pha deg -26,01 -51,53 -75,92 -98,47 -120,41 -140,34 -158,48 -176,02 163,01 138,91 134,36 129,23 177,75 -121,39 -116,09 -115,84 -110,45 -68,00 -77,79 -96,11 -107,46 -116,00 -122,31 -127,64 -133,38 -140,12 -145,87 -148,12 -154,43 -159,30 -166,74 1 7 8 ,4 1 158,00 130,78 94,17 49,86 7,88 -23,44 Specifications subject to change without notice 36-44GHz Low Noise Amplifier CHA2194 Typical Results Chip Typical Response ( On wafer Scattering parameters) : 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 25,00 15,00 5,00 -5,00 -15,00 dBS21 NF dBS11 dBS22 -25,00 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 52 54 56 58 60 Frequency( GHz ) Typical Gain , Matching and Noise Figure ( Measurements on wafer.) Ref : DSCHA21942035 -04-Feb.-02 4/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice RLosses(dB) Gain & NF ( dB ) Tamb = +25°C Vd = 3.5V Vg12& Vg3 not connected; Id = 42mA 36-44GHz Low Noise Amplifier CHA2194 Typical Results Chip Typical Response (In test JIG) Vd = 3.5V Vg12& Vg3 not connected; Id = 42mA Typical gain slope versus temperature : -0.025dB/°C Typical noise figure slope versus temperature : 0.011dB/°C 25 23 14 21 19 12 17 10 Gain Vd:3,5V 42mA T:+25°C 13 Gain Vd=3,5V 47mA T:+85°C 11 Gain Vd:3,5V 57mA T:-40°C 9 NF Vd=3,5V +25°C 7 NF Vd=3,5V +85°C 8 NF(dB) Ga(dB) 15 6 NF Vd=3,5V -40°C 5 3 4 1 -1 2 -3 -5 0 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 frequency (GHz) 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 -1 -2 -3 -4 -5 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 Pout (dBm) 40GHz +25°C Pout (dBm) 40GHz +85°C Pout (dBm) 40GHz -40°C GAIN (dB) 40GHz +25°C GAIN (dB) 40GHz +85°C GAIN (dB) 40GHz -40°C -20 -19 -18 -17 -16 -15 -14 -13 -12 -11 -10 -9 -8 -7 -6 -5 Gain (dB) Output Power (dBm) Typical Gain and NF versus temperature (measurements in test jig ) -4 Input power (dBm) Typical Gain & Pout versus temperature (measurements in test-jig) Ref : DSCHA21942035 -04-Feb.-02 5/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 36-44GHz Low Noise Amplifier CHA2194 Circuit Typical Response ( In test-Jig ) : CHA2194 Vd=4V Vg1=Vg2=Vg3=+1V 20 20 19 19 18 17 18 16 15 17 14 Output power (dBm) 13 16 12 11 15 10 9 14 8 7 13 6 5 Pout (dBm) 36GHz 4 Pout (dBm) 40GHz 3 12 Pout (dBm) 44 GHz 2 11 Gain (dB) 36GHz 1 0 Gain (dB) 40GHz -1 Gain (dB) 44 GHz 10 -2 9 -20 -19 -18 -17 -16 -15 -14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 Input power (dBm) Typical Output Power (Measurement in test Jig) Tamb = +25°C Vd=4V and Vg12=Vg3=1V 15 100 14 96 13 92 12 88 11 84 10 80 9 76 8 Pout (dBm) (Vd:3.5V) 72 7 Pout (dBm) Vd:4V/ Vg*:1V) 68 Id (mA) (Vd:3.5V) 6 Id (mA) P-1dB (dBm) These values are representative of the package assembly with input and output bonding. 64 Id( mA) (Vd:4V /Vg*:1V) 5 60 4 56 3 52 2 48 1 44 0 40 33 34 35 36 37 38 39 40 41 42 43 44 Frequency (GHz) Typical Output power –1dB. (Measurement in test Jig) Ref : DSCHA21942035 -04-Feb.-02 6/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 36-44GHz Low Noise Amplifier CHA2194 Chip schematic and Pad Identification (see also page 9) Pad Size :80/80µm, chip thickness 100um Dimensions : 1670µm x 970µm ± 35µm Ref : DSCHA21942035 -04-Feb.-02 7/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 36-44GHz Low Noise Amplifier CHA2194 Typical Chip Assembly - * Nominal Input and Output bonding length :0.3 to 0.38nH for one 25µm bond wire. - Chip backside is DC and RF bonding grounded Ref : DSCHA21942035 -04-Feb.-02 8/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 36-44GHz Low Noise Amplifier CHA2194 Chip Biasing options Internal DC schematic This chip is self-biased, and flexibility is provided by the access to positive Vg. The internal DC electrical schematic is given in order to use these pads in a safe way. Absolute recommandations: N°1 : Do not exceed Vds* = 3,5 Volt ( internal Drain to Source voltage ). N°2 : Do not bias in such a way that Vgs* becomes positive. (:internal Gate to Source voltage ) Typical biasing table and Typical results in test Jig at 40 GHz 40GHz IN TEST Jig Vds ( V) Vg12 (V) Vg3 (V) Standard Id (mA) Typical NF(dB) Typical Gain (dB) Typical P-1dB (dB) Typical Psat (dB) 3.5 NC NC 42 2.9 19 10 12 4 1 1 60 2,95 20 11 14 Low noise /low current consumption 3,5 -1 -1 30 3 17,5 8 11 Switch off 3.5 -8 -5 0 X X X X Low Noise High linearity Ref : DSCHA21942035 -04-Feb.-02 9/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 36-44GHz Low Noise Amplifier CHA2194 Ordering Information Chip form : CHA2194-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref : DSCHA21942035 -04-Feb.-02 10/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice