DIODES DMMT3904

DMMT3904W
MATCHED NPN SMALL SIGNAL SURFACE MOUNT
TRANSISTOR
NEW PRODUCT
Features
·
·
·
·
·
Epitaxial Planar Die Construction
Intrinsically Matched NPN Pair (Note 1)
Small Surface Mount Package
2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT)
1% Matched Tolerance, Available (Note 2)
SOT-363
A
C2
E2
E1
B C
Mechanical Data
·
·
·
·
·
·
·
·
B2
Case: SOT-363, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking (See Page 2): K4A
Marking Code & Date Code
Information: See Page 2
Weight: 0.015 grams (approx.)
Maximum Ratings
B1
C1
G
H
K
M
J
D
F
L
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
¾
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
a
8°
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Symbol
DMMT3904W
Unit
Collector-Base Voltage
Characteristic
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current - Continuous
IC
200
mA
Power Dissipation (Note 3)
Pd
200
mW
RqJA
625
°C/W
Tj, TSTG
-55 to +150
°C
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range
Ordering Information
Notes:
(Note 4)
Device
Packaging
Shipping
DMMT3904W-7
SOT-363
3000/Tape & Reel
1. Built with adjacent die from a single wafer.
2. Contact the Diodes, Inc. Sales department.
3. Device mounted on FR5 PCB: 1.0 x 0.75 x 0.62 in.; pad layout as shown on suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
DS30311 Rev. 3 - 2
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DMMT3904W
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
60
¾
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
¾
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
¾
V
IE = 10mA, IC = 0
ICEX
¾
50
nA
VCE = 30V, VEB(OFF) = 3.0V
IBL
¾
50
nA
VCE = 30V, VEB(OFF) = 3.0V
hFE
40
70
100
60
30
¾
¾
300
¾
¾
¾
Collector-Emitter Saturation Voltage (Note 6)
VCE(SAT)
¾
0.20
0.30
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Base-Emitter Saturation Voltage (Note 6)
VBE(SAT)
0.65
¾
0.85
0.95
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Output Capacitance
Cobo
¾
4.0
pF
VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
¾
8.0
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
1.0
10
kW
Voltage Feedback Ratio
hre
0.5
8
x 10-4
Small Signal Current Gain
hfe
100
400
¾
Output Admittance
hoe
1.0
40
mS
Current Gain-Bandwidth Product
fT
300
¾
MHz
VCE = 20V, IC = 10mA,
f = 100MHz
Noise Figure
NF
¾
5.0
dB
VCE = 5.0V, IC = 100mA,
RS = 1.0kW, f = 1.0kHz
Delay Time
td
¾
35
ns
Rise Time
tr
¾
35
ns
Storage Time
ts
¾
200
ns
Fall Time
tf
¾
50
ns
OFF CHARACTERISTICS (Note 5)
Collector Cutoff Current
Base Cutoff Current
IC = 10mA, IE = 0
ON CHARACTERISTICS (Note 5)
DC Current Gain (Note 6)
IC = 100µA, VCE =
IC = 1.0mA, VCE =
IC = 10mA, VCE =
IC = 50mA, VCE =
IC = 100mA, VCE =
1.0V
1.0V
1.0V
1.0V
1.0V
SMALL SIGNAL CHARACTERISTICS
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
SWITCHING CHARACTERISTICS
Notes:
VCC = 3.0V, IC = 10mA,
VBE(off) = -0.5V, IB1 = 1.0mA
VCC = 3.0V, IC = 10mA,
IB1 = IB2 = 1.0mA
5. Short duration test pulse used to minimize self-heating effect.
6. The DC current gain, hFE, (matched at IC = 10mA and VCE = 1.0V) Collector Emitter Saturation Voltage, VCE(SAT), and Base
Emitter Saturation Voltage, VBE(SAT) are matched with typical matched tolerances of 1% and maximum of 2%.
Marking Information
KJG = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
YM
NEW PRODUCT
Electrical Characteristics
K4A
Date Code Key
Year
2002
2003
2004
2005
2006
2007
2008
Code
N
P
R
S
T
U
V
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
DS30311 Rev. 3 - 2
2 of 3
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DMMT3904W
15
200
CIBO, INPUT CAPACITANCE (pF)
COBO, OUTPUT CAPACITANCE (pF)
PD, POWER DISSIPATION (mW)
150
100
50
10
5
Cibo
Cobo
0
0.1
0
0
25
50
75
100
125
150
200
175
10
100
1
VCE(SAT), COLLECTOR-EMITTER (V)
SATURATION VOLTAGE
1000
hFE, DC CURRENT GAIN
1
VCB, COLLECTOR-BASE VOLTAGE (V)
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
TA = 125°C
100
TA = +25°C
TA = -25°C
10
IC
IB = 10
0.1
VCE = 1.0V
0.01
1
1
0.1
10
100
1000
0.1
1
10
1000
100
IC, COLLECTOR CURRENT (mA)
Fig. 4, Typical Collector-Emitter
Saturation Voltage vs. Collector Current
IC, COLLECTOR CURRENT (mA)
Fig. 3, Typical DC Current Gain vs
Collector Current
10
IC
IB = 10
VBE(SAT), BASE-EMITTER (V)
SATURATION VOLTAGE
NEW PRODUCT
f = 1MHz
1
0.1
0.1
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current
DS30311 Rev. 3 - 2
3 of 3
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DMMT3904W