OSA 171282

YELLOW
Item No.: 171282
1.
This specification applies to AlInGaP / GaAs LED Chips
2.
Structure
2.1
Mesa structure
2.2
Electrodes
3.
Outlines (dimensions in microns)
p-side (anode)
n-side (cathode)
Au alloy or Al
Au alloy
p-Electrode
Epitaxy AlInGaP
235
110
250
n-Substrate GaAs
235
n-Electrode
Chip thickness could also be 180 µm or 210 µm
Wire bond contacts can also be square
4.
Electrical and optical characteristics (T=25°C)
Parameter
Symbol
Conditions
VF
IR
IF = 20 mA
VR = 5 V
Forward voltage
Reverse current
min
typ
max
Unit
2,10
2,40
10
V
Luminous intensity *
IV
IF = 10 mA
55
dom. wavelength
IF = 20 mA
580
λD
* On request, wafers will be delivered according to luminous intensity classes
Brightness measurement at OSA on gold plate
5.
µA
mcd
nm
Packing
Dice on adhesive film with 1) wire bond side on top
2) back contact on top
6.
Labeling
Type
Lot No.
IV typ
min
max
Quantity
© 2004
OSA Opto Light GmbH — Tel. +49-(0)30-65 76 26 83 — Fax +49-(0)30-65 76 26 81 — [email protected]