1.2V Drive Nch+Pch MOSFET EM6M2 zDimensions (Unit : mm) zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode. Each lead has same dimensions Abbreviated symbol : M02 zInner circuit zApplications Switching (6) (5) (4) ∗1 zPackaging specifications Package Type Taping Code T2R Basic ordering unit (pieces) 8000 ∗2 ∗2 ∗1 EM6M2 (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (3) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Drain-source voltage Gate-source voltage VDSS VGSS ID IDP∗1 Drain current Continuous Pulsed Total power dissipation Channel temperature Range of storage temperature PD ∗2 Tch Tstg Limits Tr1 : N-ch Tr2 : P-ch −20 20 ±10 ±8 ±200 ±200 ±400 ±400 150 120 150 −55 to +150 Unit V V mA mA mW / TOTAL mW / ELEMENT °C °C ∗1 Pw 10µs, Duty cycle 1% ∗2 Each terminal mounted on a recommended land www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/7 2009.07 - Rev.A EM6M2 Data Sheet N-ch zElectrical characteristics (Ta=25°C) Symbol Min. Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Parameter − 20 − 0.3 − − − − − 0.2 − − − − − − − Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time ∗ RDS (on) Yfs ∗ Ciss Coss Crss td (on) ∗ tr ∗ td (off) ∗ tf ∗ Typ. − − − − 0.7 0.8 1.0 1.2 1.6 − 25 10 10 5 10 15 10 Max. ±10 − 1 1.0 1.0 1.2 1.4 2.4 4.8 − − − − − − − − Unit µA V µA V Ω Ω Ω Ω Ω S pF pF pF ns ns ns ns Conditions VGS= ±8V, VDS=0V ID= 1mA, VGS=0V VDS= 20V, VGS=0V VDS= 10V, ID= 1mA ID= 200mA, VGS= 4.0V ID= 200mA, VGS= 2.5V ID= 200mA, VGS= 1.8V ID= 40mA, VGS= 1.5V ID= 20mA, VGS= 1.2V VDS= 10V, ID= 200mA VDS= 10V VGS= 0V f=1MHz VDD 10V ID= 150mA VGS= 4.0V RL 67Ω RG= 10Ω ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD ∗ Min. Typ. Max. − − 1.2 Unit V IS= 100mA, VGS=0V Conditions Typ. − − − − 0.8 1.0 1.3 1.6 2.4 − 115 10 6 6 4 17 17 Max. ±10 − −1 −1.0 1.2 1.5 2.2 3.5 9.6 − − − − − − − − Unit µA V µA V Ω Ω Ω Ω Ω S pF pF pF ns ns ns ns Conditions VGS= ±10V, VDS=0V ID= −1mA, VGS=0V VDS= −20V, VGS=0V VDS= −10V, ID= −100µA ID= −200mA, VGS= −4.5V ID= −100mA, VGS= −2.5V ID= −100mA, VGS= −1.8V ID= −40mA, VGS= −1.5V ID= −10mA, VGS= −1.2V VDS= −10V, ID= −200mA VDS= −10V VGS= 0V f=1MHz VDD −10V ID= −100mA VGS= −4.5V RL 100Ω RG= 10Ω ∗ Pulsed P-ch zElectrical characteristics (Ta=25°C) Parameter Symbol Min. − IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS −20 − IDSS Zero gate voltage drain current VGS (th) −0.3 Gate threshold voltage − − Static drain-source on-state ∗ RDS (on) − resistance − − Forward transfer admittance Yfs ∗ 0.2 Input capacitance Ciss − Output capacitance Coss − Reverse transfer capacitance Crss − Turn-on delay time − td (on) ∗ Rise time tr ∗ − Turn-off delay time td (off) ∗ − Fall time − tf ∗ ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD ∗ Min. Typ. Max. − − −1.2 Unit V Conditions IS= −200mA, VGS=0V ∗ Pulsed www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/7 2009.07 - Rev.A EM6M2 Data Sheet N-ch zElectrical characteristic curve VGS= 1.5V 0.3 VGS= 1.3V 0.2 VGS= 1.2V 0.4 VGS= 1.3V 0.3 VGS= 1.2V 0.2 VGS= 1.5V 0.1 0 Ta=25°C Pulsed 0 0.2 0.4 0.6 0.8 1 0 2 DRAIN-SOURCE VOLTAGE : VDS[V] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 1.2V VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.0V 1000 100 0.001 0.01 0.1 100 0.001 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1.0 1.5 Fig.3 Typical transfer characteristics Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.01 0.1 VGS= 2.5V Pulsed 100 0.001 1 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1 0.01 DRAIN-CURRENT : ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.1 DRAIN-CURRENT : ID [A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) 3/7 1 DRAIN-CURRENT : ID [A] 10000 0.01 0.1 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) VGS= 1.5V Pulsed 100 0.001 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1000 DRAIN-CURRENT : ID [A] 10000 0.1 0.5 GATE-SOURCE VOLTAGE : VGS (V) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) VGS= 1.8V Pulsed 0.01 0.0001 0.00001 0.0 1000 DRAIN-CURRENT : ID [A] 100 0.001 Ta=125°C 75°C 25°C −25°C 0.001 10 10000 VGS= 4.0V Pulsed Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 10000 8 0.01 Fig.2 Typical Output Characteristics(Ⅱ) 10000 Ta= 25°C Pulsed 6 0.1 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics(Ⅰ) 10000 4 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 0.1 VGS= 2.5V VGS= 1.8V DRAIN CURRENT : ID (A) 0.4 VGS= 4.5V VGS= 2.5V VGS= 1.8V 1 VDS=10V Pulsed 0.5 Ta=25°C Pulsed DRAIN CURRENT : ID [A] DRAIN CURRENT : ID [A] 0.5 1 VGS= 1.2V Pulsed 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 0.001 0.01 0.1 1 DRAIN-CURRENT : ID [A] Fig.9 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ) 2009.07 - Rev.A EM6M2 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.01 0.1 Ta=125°C 75°C 25°C −25°C 0.1 0.01 0.0 1 2.5 VGS=0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[Ω] SOURCE CURRENT : IS (A) VDS= 10V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 1 Data Sheet 0.5 1.5 1 Ta=25°C Pulsed ID = 0.2A 2 1.5 1 0.5 ID = 0.02A 0 0 2 4 6 8 10 SOURCE-DRAIN VOLTAGE : VSD (V) DRAIN-CURRENT : ID [A] GATE-SOURCE VOLTAGE : VGS[V] Fig.11 Source current vs. source-drain voltage Fig.10 Forward Transfer Admittance vs. Drain Current 100 Ta=25°C VDD=10V VGS=4V RG=10Ω Pulsed CAPACITANCE : C [pF] SWITHING TIME : t (ns) 1000 100 td(off) tf td(on) 10 Ciss 10 0.1 1 DRAIN CURRENT : ID (A) Crss Coss tr 1 0.01 Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage 1 Ta=25°C f=1MHz VGS=0V 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.13 Switching characteristics www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ Fig.14 Typical Capacitance vs. Drain-Source Voltage 4/7 2009.07 - Rev.A EM6M2 Data Sheet P-ch zElectrical characteristic curve 0.15 0.2 Ta=25°C Pulsed VGS= -2.5V VGS= -2.0V VGS= -1.8V 0.1 VGS= -1.5V 0.05 VGS= -1.2V VGS= -2.5V VGS= -1.8V VGS= -1.5V 0.15 VGS= -1.2V 0.1 0.05 VGS= -1.0V VGS= -1.0V 0 0.6 0.8 1 0 2 DRAIN-SOURCE VOLTAGE : -VDS[V] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 10000 1000 VGS= -1.2V VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 0.1 4 0 0.01 0.1 1 0.01 DRAIN-CURRENT : -ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 0.1 Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ) 5/7 1 Resistance vs. Drain Current(Ⅲ) Ta=125°C Ta=75°C Ta=25°C Ta= -25°C DRAIN-CURRENT : -ID [A] 0.1 DRAIN-CURRENT : -ID [A] 10000 0.01 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C Fig.6 Static Drain-Source On-State VGS= -1.5V Pulsed 100 0.001 1.5 1000 100 0.001 1 1000 0.1 VGS= -2.5V Pulsed DRAIN-CURRENT : -ID [A] 10000 1 Fig.3 Typical Transfer Characteristics Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Π ) Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.01 0.5 GATE-SOURCE VOLTAGE : -VGS[V] 10000 100 0.001 1 1000 100 0.001 0.001 10 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 8 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C DRAIN-CURRENT : -ID [A] VGS= -1.8V Pulsed 6 VGS= -4.5V Pulsed Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ι ) 10000 Ta= 25°C Ta= - 25°C Fig.2 Typical output characteristics(Ⅱ) Ta=25°C Pulsed 0.01 Ta= 75°C DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical output characteristics(Ⅰ) 100 0.001 Ta= 125°C 0.01 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 0.4 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 0.2 VDS= -10V Pulsed 0.0001 0 0 10000 1 Ta=25°C Pulsed VGS= -4.5V DRAIN CURRENT : -ID [A] VGS= -10.0V VGS= -4.5V VGS= -3.2V DRAIN CURRENT : -ID [A] DRAIN CURRENT : -ID [A] 0.2 VGS= -1.2V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1000 100 0.001 0.01 0.1 DRAIN-CURRENT : -ID [A] Fig.9 Static Drain-Source On-State Resistance vs. Drain Current(Ⅵ) 2009.07 - Rev.A Ta=-25°C Ta=25°C Ta=75°C Ta=125°C Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.1 0.01 0.1 0.5 tf 100 1 td(on) 1 0.1 1 0 1 3 2 Ta=25°C VDD = -10V ID = -0.2A R G=10Ω Pulsed DRAIN-CURRENT : -ID [A] Fig.13 Switching Characteristics www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 0 0.5 1 TOTAL GATE CHARGE : Qg [nC] Fig.14 Dynamic Input Characteristics 6/7 4 6 8 10 Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage 4 1 2 GATE-SOURCE VOLTAGE : -VGS[V] 1000 0 0.01 ID = -0.01A 2 1.5 5 Ta=25°C VDD = -10V VGS=-4.5V R G=10Ω Pulsed 10 tr ID = -0.2A 3 Fig.11 Reverse Drain Current vs. Sourse-Drain Voltage GATE-SOURCE VOLTAGE : -VGS [V] td(off) 4 SOURCE-DRAIN VOLTAGE : -VSD [V] DRAIN-CURRENT : -ID [A] 1000 Ta=25°C Pulsed 0 0 1 Fig.10 Forward Transfer Admittance vs. Drain Current SWITCHING TIME : t [ns] 5 VGS=0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[Ω] 1 VDS= -10V Pulsed 1.5 CAPACITANCE : C [pF] 1.0 Data Sheet REVERSE DRAIN CURRENT : -Is [A] FORWARD TRANSFER ADMITTANCE : |Yfs| [S] EM6M2 Ta=25°C f=1MHz VGS=0V Ciss 100 10 Coss Crss 1 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.15 Typical Capacitance vs. Drain-Source Voltage 2009.07 - Rev.A EM6M2 Data Sheet N-ch zMeasurement circuit Pulse Width ID VGS VDS 90% 50% 10% VGS 50% 10% VDS 10% RL D.U.T. 90% 90% RG tr td（on） VDD tf td（off） ton toff Fig.1-2 Switching Waveforms Fig.1-1 Switching Time Measurement circuit P-ch zMeasurement circuit Pulse Width VGS VGS 10% 50% ID 90% VDS RL RG VDD 10% 10% 90% VDS td（on） 90% td（off） tr ton Fig.2-1 Switching Time Measurement circuit 50% tf toff Fig.2-2 Switching Waveforms zNotice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 7/7 2009.07 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. 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