ROHM RRH050P03

4V Drive Pch MOSFET
RRH050P03
Dimensions (Unit : mm)
Structure
Silicon P-channel MOSFET
SOP8
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
Application
Switching
Each lead has same dimensions
Packaging specifications
Package
Type
Inner circuit
Taping
(8)
(7)
(6)
(5)
TB
Code
Basic ordering unit (pieces)
2500
RRH050P03
∗2
∗1
Absolute maximum ratings (Ta = 25C)
(1)
Symbol
Limits
Unit
Drain-source voltage
VDSS
−30
V
Gate-source voltage
VGSS
±20
V
ID
±5
A
Parameter
Continuous
Drain current
Source current
(Body Diode)
∗1
Pulsed
IDP
±20
A
Continuous
Is
−1.6
A
Pulsed
Isp
Power dissipation
PD
∗1
∗2
−20
A
2.0
W
Channel temperature
Tch
150
°C
Range of storage temperature
Tstg
−55 to +150
°C
Symbol
Limits
Unit
Rth (ch-a)∗
62.5
°C / W
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(4)
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6 )Drain
(7) Drain
(8) Drain
∗1 Pw≤10μs, Duty cycle≤1%
∗2 Mounted on a ceramic board.
Thermal resistance
Parameter
Channel to Ambient
∗ Mounted on a ceramic board.
www.rohm.com
c 2010 ROHM Co., Ltd. All rights reserved.
○
1/5
2010.02 - Rev.A
RRH050P03
Data Sheet
Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Symbol
Min.
Typ.
Max.
Unit
IGSS
−
−
±10
μA
V(BR)DSS
−30
−
−
V
ID=−1mA, VGS=0V
IDSS
−
−
−1
μA
VDS=−30V, VGS=0V
VGS (th)
−1.0
−
−2.5
V
−
36
50
−
52
72
−
58
80
RDS (on)∗
Test Conditions
VGS=±20V, VDS=0V
VDS=−10V, ID=−1mA
ID=−5A, VGS=−10V
mΩ
ID=−2.5A, VGS=−4.5V
ID=−2.5A, VGS=−4.0V
Forward transfer admittance
l Yfs l ∗
4
−
−
S
ID=−5A, VDS=−10V
Input capacitance
Ciss
−
850
−
pF
VDS=−10V
Output capacitance
Coss
−
120
−
pF
VGS=0V
Reverse transfer capacitance
Crss
−
120
−
pF
f=1MHz
td(on) ∗
tr ∗
−
9
−
ns
ID=−2.5A, VDD
−
25
−
ns
VGS=−10V
td(off) ∗
tf ∗
−
55
−
ns
RL=6.0Ω
−
30
−
ns
RG=10Ω
Qg ∗
−
9.2
−
nC
Qgs ∗
Qgd ∗
−
2.4
−
nC
−
3.6
−
nC
ID=−5A, VDD
VGS=−5V
RL=3.0Ω
RG=10Ω
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
−15V
−15V
∗Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
Symbol
VSD ∗
Min.
Typ.
Max.
Unit
−
−
−1.2
V
Test Conditions
Is=−5A, VGS=0V
∗Pulsed
www.rohm.com
c 2010 ROHM Co., Ltd. All rights reserved.
○
2/5
2010.02 - Rev.A
RRH050P03
Data Sheet
Electrical characteristic curves
VGS=-4.5V
VGS=-4.0V
4
VGS=-3.5V
VGS=-3.0V
2
Ta=25 °C
Pulsed
VGS=- 10V
VGS=- 4.5V
VGS=- 3.5V
8
6
VGS=-3.0V
4
2
VGS=-2.5V
VGS=-2.5V
0
0
0.0
0.2
0.4
0.6
0.8
1.0
0
2
DRAIN-SOURCE VOLTAGE -VDS[V]
10
10
10
Ta=125 °C
Ta=75 °C
Ta=25 °C
Ta= -25 °C
100
10
DRAIN CURRENT : -ID [A]
1
Ta=125 °C
Ta= 75 °C
Ta= 25 °C
Ta= -25 °C
1
10
FORWARD TRANSFER ADMITTANCE
: |Yfs| [S]
100
1
10
0.1
10
DRAIN CURRENT : -ID [A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(ΙV)
www.rohm.com
c 2010 ROHM Co., Ltd. All rights reserved.
○
VDS=-10V
Pulsed
10
Ta= -25°C
Ta= 25 °C
Ta= 75 °C
Ta= 125 °C
1
0
0.1
1.0
10.0
DRAIN CURRENT : -ID [A]
Fig.8 Forward Transfer Admittance
vs. Drain Current
3/5
1
10
DRAIN CURRENT : -ID [A]
100
VGS= -4.0V
Pulsed
3.0
Ta=125 °C
Ta=75 °C
Ta=25 °C
Ta= -25 °C
100
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(ΙΙ)
1000
0.1
VGS= -4.5V
Pulsed
DRAIN CURRENT : -ID [A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ι)
2.5
1000
VGS= -10V
Pulsed
0.1
2.0
Fig.3 Typical Transfer Characteristics
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(ΙΙΙ)
REVERSE DRAIN CURRENT : -Is [A]
1
1.5
GATE-SOURCE VOLTAGE : -VGS [V]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on) [mΩ]
100
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on) [mΩ]
VGS=-4.0V
VGS=-4.5V
VGS=-10V
0.1
0.01
0.001
1.0
1000
Ta=25°C
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on) [mΩ]
8
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
0.1
Fig.2 Typical Output Characteristics(ΙΙ)
1000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on) [mΩ]
6
VDS=-10V
Pulsed
1
DRAIN-SOURCE VOLTAGE -VDS[V]
Fig.1 Typical Output Characteristics(Ι)
10
4
DRAIN CURRENT : -ID [A]
8
6
10
10
Ta=25 °C
Pulsed
VGS=-10V
DRAIN CURRENT : -ID[A]
DRAIN CURRENT : -ID[A]
10
10
VGS=0V
Pulsed
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
SOURCE-DRAIN VOLTAGE : -VSD [V]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
2010.02 - Rev.A
10000
200
Ta=25 °C
Pulsed
180
160
140
120
ID= -5.00A
100
80
ID= -2.50A
60
1000
td(off)
10
20
td(on)
1
0
4
6
8
10
12
0.0
14
1.0
10.0
10
8
6
Ta=25 °C
VDD=-15V
ID=-5.0A
RG=10Ω
Pulsed
4
2
0
0
5
10
15
20
TOTAL GATE CHARGE : Qg [nC]
Drain Current : -ID [A]
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
Fig.11 Switching Characteristics
Fig.12 Dynamic Input Characteristics
100
10000
Operation in this area is limited by RDS(ON)
Ta=25°C
f=1MHz
VGS=0V
Ciss
( VGS = -10V )
DRAIN CURRENT : -ID (A)
CAPACITANCE : C [pF]
tr
0.1
GATE-SURCE VOLTAGE : -VGS [V]
1000
100
Crss
Coss
10
PW = 100us
10
PW = 1ms
1
PW = 10ms
0.1
Ta = 25°C
Single Pulse
MOUNTED ON CERAMIC BOARD
DC operation
0.01
0.01
0.1
1
10
100
0.1
1
10
100
DRAIN−SOURCE VOLTAGE : -VDS ( V )
DRAIN-SOURCE VOLTAGE : -VDS [V]
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
NORMARIZED TRANSIENT THERMAL
RESISTANCE : r (t)
tf
100
40
2
Ta=25 °C
VDD= -15V
VGS=-10V
RG=10Ω
Pulsed
GATE-SOURCE VOLTAGE : -VGS [V]
Data Sheet
Switching Time : t [ns]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE RDS(on) [mΩ]
RRH050P03
Fig.14 Maximum Safe Operating Aera
10
1
0.1
Ta = 25 °C
Single Pulse : 1Unit
Rth (ch-a)(t) = r( t) ×Rth (ch-a)
Rth(ch-a) = 62.5 °C/W
<Mounted on a CERAMIC board>
0.01
0.001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s)
www.rohm.com
c 2010 ROHM Co., Ltd. All rights reserved.
○
4/5
2010.02 - Rev.A
RRH050P03
Data Sheet
Measurement circuit
VGS
ID
VDS
Pulse Width
VGS
10%
50%
RL
90%
50%
D.U.T.
RG
10%
VDD
VDS
10%
90%
td(on)
90%
td(off)
tr
ton
tf
toff
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
VG
VGS
ID
VDS
RL
IG(Const.)
D.U.T.
Qg
VGS
Qgs
RG
Qgd
VDD
Charge
Fig.2-1 Gate Charge Measurement Circuit
www.rohm.com
c 2010 ROHM Co., Ltd. All rights reserved.
○
Fig.2-2 Gate Charge Waveform
5/5
2010.02 - Rev.A
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, fire or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any
of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.
If you intend to export or ship overseas any Product or technology specified herein that may
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to
obtain a license or permit under the Law.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
R1010A