ROHM EM6K34

0.9V Drive Nch + Nch MOSFET
EM6K34
 Structure
Silicon N-channel MOSFET
 Dimensions (Unit : mm)
EMT6
Features
1) High speed switing.
2) Small package(EMT6).
3)Ultra low voltage drive(0.9V drive).
(6)
(5)
(4)
(1)
(2)
(3)
Abbreviated symbol : K34
 Application
Switching
 Inner circuit
(6)
(5)
 Packaging specifications
Type
∗1
Package
Code
Basic ordering unit (pieces)
Taping
T2R
8000

EM6K34
∗2
∗2
∗1
(1)
Parameter
Drain current
Source current
(Body Diode)
Symbol
Limits
Unit
VDSS
50
V
VGSS
8
V
Continuous
ID
200
mA
Pulsed
Continuous
IDP
Is
*1
800
125
mA
mA
Pulsed
Isp
*1
800
mA
PD
*2
Tch
Tstg
150
120
150
55 to +150
mW / TOTAL
mW / ELEMENT
C
C
Symbol
Limits
Unit
Rth (ch-a)
833
1042
C/ W /TOTAL
C/ W /ELEMENT
Gate-source voltage
Power dissipation
Channel temperature
Range of storage temperature
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
 Absolute maximum ratings (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Drain-source voltage
(4)
(3)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a recommended land.
 Thermal resistance
Parameter
Channel to Ambient
*
* Each terminal mounted on a recommended land.
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©2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.11 - Rev.A
EM6K34
Data Sheet
 Electrical characteristics (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Min.
Typ.
Max.
Unit
IGSS
-
-
10
A
VGS=8V, VDS=0V
Drain-source breakdown voltage V (BR)DSS
50
-
-
V
ID=1mA, VGS=0V
IDSS
-
-
1
A
VDS=50V, VGS=0V
VGS (th)
0.3
-
0.8
V
VDS=10V, ID=1mA
-
1.6
2.2
ID=200mA, VGS=4.5V
-
1.7
2.4
ID=200mA, VGS=2.5V
-
2.0
2.8
-
2.2
3.3
ID=100mA, VGS=1.2V
-
3.0
9.0
ID=10mA, VGS=0.9V
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Conditions
Symbol
Gate-source leakage
RDS (on)*
l Yfs l *

ID=200mA, VGS=1.5V
0.2
-
-
S
ID=200mA, VDS=10V
Input capacitance
Ciss
-
26
-
pF
VDS=10V
Output capacitance
Coss
-
6
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
3
-
pF
f=1MHz
Turn-on delay time
td(on) *
-
5
-
ns
ID=100mA, VDD 25V
tr *
-
8
-
ns
VGS=4.5V
td(off) *
tf *
-
17
43
-
ns
ns
RL=250
RG=10
Rise time
Turn-off delay time
Fall time
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Forward Voltage
Symbol
VSD *
Min.
Typ.
Max.
-
-
1.2
Unit
V
Conditions
Is=200mA, VGS=0V
*Pulsed
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2/5
2010.11- Rev.A
Data Sheet
RYU002N05
 Electrical characteristics curves
0.2
0.1
VGS= 4.5V
VGS= 2.5V
VGS= 1.5V
VGS= 1.2V
VGS= 0.9V
Ta=25C
Pulsed
VGS= 0.8V
0.05
1
VGS= 4.5V
VGS= 2.5V
VGS= 1.5V
VGS= 1.2V
0.15
VGS= 0.9V
0.1
0.2
0.4
0.6
VDS= 10V
Pulsed
Ta= 125C
Ta= 75C
Ta= 25C
Ta= 25C
0.1
0.01
VGS= 0.7V
0.001
0
0
0.8
1
0
2
4
6
8
0
10
0.2
0.4
0.6
0.8
1
DRAIN-SOURCE VOLTAGE : VDS[V]
DRAIN-SOURCE VOLTAGE : VDS[V]
GATE-SOURCE VOLTAGE : VGS[V]
Fig.1 Typical Output Characteristics( Ⅰ)
Fig.2 Typical Output Characteristics( Ⅱ)
Fig.3 Typical Transfer Characteristics
Ta= 25C
Pulsed
VGS= 0.9V
VGS= 1.2V
VGS= 1.5V
VGS= 2.5V
VGS= 4.5V
100
0.001
0.01
0.1
1
VGS= 4.5V
Pulsed
1000
Ta= 125C
Ta= 75C
Ta= 25C
Ta= 25C
100
0.001
DRAIN-CURRENT : ID[A]
VGS= 1.5V
Pulsed
Ta= 125C
Ta= 75C
Ta= 25C
Ta= 25C
100
0.01
0.1
1
DRAIN-CURRENT : ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅳ)
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VGS= 2.5V
Pulsed
1000
Ta= 125C
Ta= 75C
Ta= 25C
Ta= 25C
100
1
0.001
10000
VGS= 1.2V
Pulsed
1000
Ta= 125C
Ta= 75C
Ta= 25C
Ta= 25C
100
0.001
0.01
0.1
1
DRAIN-CURRENT : ID[A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅴ)
3/5
0.01
0.1
1
DRAIN-CURRENT : ID[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅱ)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[m]
10000
0.001
0.1
10000
DRAIN-CURRENT : ID[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅰ)
1000
0.01
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅲ)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[m]
1000
10000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[m]
10000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[m]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[m]
Ta=25C
Pulsed
VGS= 0.8V
0.05
VGS= 0.7V
0
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[m]
DRAIN CURRENT : ID[A]
0.15
DRAIN CURRENT : ID[A]
DRAIN CURRENT : ID[A]
0.2
10000
VGS= 0.9V
Pulsed
Ta= 125C
Ta= 75C
Ta= 25C
Ta= 25C
1000
100
0.001
0.01
0.1
1
DRAIN-CURRENT : ID[A]
Fig.9 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅵ)
2010.11 - Rev.A
1
VDS= 10V
Pulsed
1
Ta=25C
Ta=25C
Ta=75C
Ta=125C
0.1
VGS=0V
Pulsed
0.1
Ta= 125C
Ta= 75C
Ta= 25C
Ta= 25C
0.01
0.01
0.1
1
0.5
1
Fig.10 Forward Transfer Admittance
vs. Drain Current
Fig.11 Reverse Drain Current
vs. Sourse-Drain Voltage
10
td(on)
tr
1
0.1
1
Ta=25C
Pulsed
4000
ID= 0.01A
3000
ID= 0.20A
2000
1000
0
0
1
2
3
4
5
6
7
8
GATE-SOURCE VOLTAGE : VGS[V]
Fig.12 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
1000
Ta=25C
f=1MHz
VGS=0V
4
CAPACITANCE : C [pF]
GATE-SOURCE VOLTAGE : VGS [V]
tf
100
Ta=25C
VDD=25V
VGS=4.5V
RG=10
5000
1.5
SOURCE-DRAIN VOLTAGE : VSD [V]
td(off)
0.01
0
DRAIN-CURRENT : ID[A]
1000
SWITCHING TIME : t [ns]
Data Sheet
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[m]
10
SOURCE CURRENT : Is [A]
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
EM6K34
3
2
Ta=25C
VDD=25V
ID= 0.2A
RG=10
Pulsed
1
0
0
0.5
1
100
Ciss
10
Crss
Coss
1
1.5
0.01
0.1
1
10
100
DRAIN-CURRENT : ID[A]
TOTAL GATE CHARGE : Qg [nC]
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.13 Switching Characteristics
Fig.14 Typical Capacitance
vs. Drain-Source Voltage
Fig.15 Typical Capacitance
vs. Drain-Source Voltage
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4/5
2010.11- Rev.A
EM6K34
Data Sheet
 Measurement circuits
Pulse width
VGS
ID
VDS
RL
50%
10%
D.U.T.
RG
90%
50%
10%
VGS
VDS
VDD
90%
td(on)
tr
ton
Fig.1-1 Switching time measurement circuit
10%
90%
td(off)
tf
toff
Fig.1-2 Switching waveforms
 Notice
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design
ESD protection circuit.
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5/5
2010.11- Rev.A
Notice
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However, should you incur any damage arising from any inaccuracy or misprint of such
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R1010A