EMIF06-MSD03F3 6-line low capacitance IPAD™ for micro-SD card with EMI filtering and ESD protection Features ■ EMI low-pass filter ■ ESD protection ±15 kV (IEC 61000-4-2) ■ Integrated pull up resistors to prevent bus floating when no card is connected ■ 208 MHz clock frequency compatible with SDR104 mode (SD3.0) ■ Lead-free package ■ Coated version option on request ■ Electrical card detect option Flip Chip (16 bumps) Figure 1. Pin configuration (bump side) 4 Benefits ■ Low power consumption A ■ Easy layout thanks to smart pin-out configuration B ■ Very low PCB space consumption ■ High reliability offered by monolithic integration ■ Reduction of parasitic elements thanks to CSP integration 3 2 1 C D Complies with the following standards: ■ IEC 61000-4-2 level 4: – 15 kV (air discharge) – 8 kV (contact discharge) Application Micro (T-Flash) secure digital memory card in: ■ Mobile phones ■ Communication systems Description The EMIF06-MSD03F3 is a highly integrated device based on IPAD technology offering two functions: ESD protection to comply with IEC standard, and EMI filtering to reject mobile phone frequencies. July 2011 TM: IPAD is a trademark of STMicroelectronics Doc ID 018984 Rev 1 1/8 www.st.com 8 Characteristics 1 EMIF06-MSD03F3 Characteristics Table 1. Absolute ratings (limiting values) Symbol VPP Tj Parameter Value ESD discharge IEC 61000-4-2, level 4 air discharge, card side contact discharge, card side air discharge, IC side contact discharge, ICside 15 8 2 2 Maximum junction temperature 125 °C kV Top Operating temperature range - 40 to + 85 °C Tstg Storage temperature range - 55 to + 150 °C Figure 2. EMIF06-MSD03F3 configuration Vcc1 R9 R10 R11 R12 R13 Vcc2 Clk CMD 2kV Data 0 Data 1 Data 2 Data 3/CD SDClk SDCMD SDData 0 15kV SDData 1 SDData 2 SDData 3/CD R1 R2 R3 R4 R5 R6 GND Table 2. 2/8 Unit Pin configuration Pin Signal Pin Signal A1 DATA0 C1 CMD A2 DATA1 C2 Vcc2 A3 SDDATA1 C3 Vss A4 SDDATA0 C4 SDCMD B1 CLK D1 DATA3/CD B2 Vcc1 D2 DATA2 B3 Vss D3 SDDATA2 B4 SDCLK D4 SDDATA3/CD Doc ID 018984 Rev 1 EMIF06-MSD03F3 Table 3. Characteristics Electrical characteristic Symbol Parameter Test conditions Min. Typ. 14 16 Max. Unit VBR Breakdown voltage IR = 1 mA IRM Leakage current at VRM VRM = 3 V R1, R2, R3, R4, R5, R6 Serial resistance Tolerance ±10 %, matching ±2 % 40 Ω R9, R10, R11, R12 Pull-up resistance Tolerance ±10 %, matching ±2 % 50 kΩ Pull-up resistance on CMD Tolerance ±10 % 15 kΩ V = 0 V, F = 10 MHz, VOSC = 30 mV 10 12 V = 1.8 V, F = 10 MHz, VOSC = 30 mV 7.5 10 R13 Data line capacitance Cline V 0.1 V = 2.9 V, F = 10 MHz, VOSC = 30 mV µA pF 9 F0 Cut-off frequency S21 = -3 dB 550 MHz tR,tF Rise and fall time Cload = 10 pF, low-ref = 0.58 V, high-ref = 1.27 V, VDDIO = 1.8 V 0.98 ns Figure 3. S21 attenuation measurements S21 (dB) 0.00 Figure 4. 0.00 Analog crosstalk measurements dB -10.00 -5.00 -20.00 -30.00 -10.00 -40.00 -50.00 -15.00 -60.00 -70.00 -20.00 -80.00 -90.00 -25.00 -100.00 F (Hz) -30.00 100.0k Figure 5. 12 1.0M Clk Data1 Data3 10.0M -110.00 100.0M Data0 Data2 Cmd 1.0G F (Hz) -120.00 100.0k Line capacitance versus applied voltage (typical values) 1.0M Clk-Data0 Figure 6. C (pF) 10.0M 100.0M 1.0G Data3-SDData0 Line capacitance versus frequency (typical values) C (pF) 16.00 F=10 MHz VOSC=30 mV TAMB=25 °C 11 10 F=1MHz to 350MHz Vosc =30mVRMS Tj=25 °C Line DATA/GND 14.00 9 12.00 8 7 10.00 6 8.00 5 6.00 Clk Data0 CMD Data3 4 3 2 1 A3/B3 (SDDATA1) &D3/C3 (SDDATA2) 4.00 2.00 VBIAS(V) 0 F (MHz) 0.00 0 1 2 3 4 5 0 Doc ID 018984 Rev 1 50 100 150 200 250 300 350 3/8 Characteristics Figure 7. EMIF06-MSD03F3 Digital crosstalk measurements Vcc = 3.9 V Figure 8. ESD response to IEC 61000-4-2 (+8 kV contact discharge) on one input and one output 20.0 V/div Figure 9. 10.0 V/div 20 ns/div 20 ns/div 10.0 V/div 10.0 V/div 20 ns/div 4/8 ESD response to IEC 61000-4-2 (-8 kV contact discharge) on one input and one output Doc ID 018984 Rev 1 20 ns/div EMIF06-MSD03F3 2 Ordering information scheme Ordering information scheme Figure 10. Ordering information scheme EMIF 06 - MSD 03 F3 EMI filter Number of lines Application MSD = micro SD card Version 03 = 10 pF line capacitance Package F = Flip Chip 3= lead-free, pitch = 400 µm, bump = 255 µm Doc ID 018984 Rev 1 5/8 Package information 3 EMIF06-MSD03F3 Package information ● Epoxy meets UL94, V0 ● Lead-free package In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 400 µm ± 40 605 µm ± 55 255 µm ± 40 1.54 mm ± 40 µm 400 µm ± 40 170 µm ± 10 Figure 11. Package dimensions 170 µm ± 10 1.54 mm ± 40 µm Figure 12. Footprint Copper pad Diameter: 220 µm recommended 260 µm maximum Solder mask opening: 300 µm minimum Solder stencil opening: 220 µm recommended 6/8 Figure 13. Marking Dot, ST logo ECOPACK status xx = marking z = manufacturing location yww = datecode y = year, ww = week Doc ID 018984 Rev 1 x x z y w w EMIF06-MSD03F3 Ordering information Figure 14. Tape and reel specification Dot identifying Pin A1 location Ø 1.55 2.0 4.0 xxz yww STE xxz yww 0.69 STE xxz yww STE 8.0 3.5 1.68 1.75 0.20 4.0 1.68 All dimensionsare typical values in mm User direction of unreeling 4 Ordering information Table 4. Ordering information Order code Marking Package Weight Base qty Delivery mode EMIF06-MSD03F3 JV Flip Chip 3.2 mg 5000 Tape and reel 7” Note: More information is available in the application notes: AN2348: “Flip Chip: Package description and recommendations for use” AN1751: "EMI Filters: Recommendations and measurements" 5 Revision history Table 5. Document revision history Date Revision 11-Jul-2011 1 Changes First issue. 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