FDP6021P/FDB6021P 20V P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel power MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for power management applications. • –28 A, –20 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 40 mΩ @ VGS = 2.5 V RDS(ON) = 65 mΩ @ VGS = 1.8 V Applications • Critical DC electrical parameters specified at elevated temperature • Battery management • Load switch • High performance trench technology for extremely low RDS(ON) • Voltage regulator • 175°C maximum junction temperature rating . S D G G G D S TO-220 TO-263AB FDP Series S FDB Series Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current PD Total Power Dissipation @ TC = 25°C Ratings Units –20 V ±8 V – Continuous (Note 1) –28 A – Pulsed (Note 1) –80 Derate above 25°C TJ, TSTG D Operating and Storage Junction Temperature Range 37 W 0.25 W°C –65 to +175 °C Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient 4 °C/W 62.5 °C/W Package Marking and Ordering Information Device Marking FDP6021P FDB6021P 2001 Fairchild Semiconductor Corporation Device FDP6021P FDB6021P Reel Size Tube 13” Tape width n/a 24mm Quantity 45 800 units FDP6021P/FDB6021P Rev B(W) FDP6021P/FDB6021P April 2001 PRELIMINARY Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units –16 mV/°C Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = –250 µA,Referenced to 25°C VDS = –16 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –8 V VDS = 0 V –100 nA On Characteristics –20 V (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient ID = –250 µA,Referenced to 25°C 3 Static Drain–Source On–Resistance 24 31 50 30 –0.4 –0.7 –1.5 V mV/°C mΩ ID(on) On–State Drain Current VGS = –4.5 V, ID = –14 A VGS = –2.5 V, ID = –12 A VGS = –1.8 V, ID = –10 A VGS= –4.5V, ID = –14 A, TJ=125°C VGS = –4.5 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, ID = –14 A 33 VDS = –10 V, f = 1.0 MHz V GS = 0 V, 1890 pF 302 pF 124 pF 30 40 65 42 –40 A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time (Note 2) VDD = –10 V, VGS = –4.5 V, ID = –1 A, RGEN = 6 Ω 13 23 ns 10 20 ns ns td(off) Turn–Off Delay Time 80 128 tf Turn–Off Fall Time 50 80 ns Qg Total Gate Charge 20 28 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = –10 V, VGS = –4.5 V ID = –14 A, 4 nC 7 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = –14 A Voltage –0.9 –28 –1.3 A V Notes: 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 2. TO-220 package is supplied in tube / rail @ 45 pieces per rail. 3. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A FDP6021P/FDB6021P Rev. B(W) FDP6021P/FDB6021P Electrical Characteristics FDP6021P/FDB6021P Typical Characteristics 40 2.4 -ID, DRAIN CURRENT (A) -3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V -3.0V 30 -2.5V -2.0V 20 -1.8V 10 -1.5V 2.2 VGS = -1.8V 2 1.8 -2.0V 1.6 1.4 -2.5V -3.0V 1.2 -3.5V -4.5V 1 0.8 0 0 1 2 3 4 0 5 10 Figure 1. On-Region Characteristics. 30 40 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.5 0.09 ID = -14A VGS = -4.5V 1.4 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 20 -ID, DRAIN CURRENT (A) -VDS, DRAIN-SOURCE VOLTAGE (V) 1.3 1.2 1.1 1 0.9 0.8 ID = -7A 0.07 0.05 TA = 125oC 0.03 TA = 25oC 0.7 -50 -25 0 25 50 75 100 125 150 0.01 175 1 TJ, JUNCTION TEMPERATURE (oC) Figure 3. On-Resistance Variation withTemperature. 5 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VDS = -5V -IS, REVERSE DRAIN CURRENT (A) 30 25oC TA = -55oC 25 -ID, DRAIN CURRENT (A) 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) 125oC 20 15 10 5 VGS = 0V 10 TA = 125oC 1 25oC 0.1 0.01 -55oC 0.001 0.0001 0 0.5 1 1.5 2 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2.5 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP6021P/FDB6021P Rev. B(W) FDP6021P/FDB6021P Typical Characteristics 3000 ID =-14A -10V VDS = -5V f = 1MHz VGS = 0 V 2500 4 CAPACITANCE (pF) -VGS , GATE-SOURCE VOLTAGE (V) 5 -15V 3 2 1 CISS 2000 1500 1000 COSS 500 CRSS 0 0 0 5 10 15 20 25 0 5 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 20 1000 RDS(ON) LIMIT 100µs 1ms 10ms 100ms 1s DC 10 VGS = -4.5V SINGLE PULSE RθJC = 4oC/W TA = 25oC 1 1 10 SINGLE PULSE RθJC = 4°C/W TA = 25°C 800 600 400 200 0 0.0001 100 -VDS, DRAIN-SOURCE VOLTAGE (V) 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 15 Figure 8. Capacitance Characteristics. P(pk), PEAK TRANSIENT POWER (W) -ID, DRAIN CURRENT (A) 100 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA RθJC = 4 °C/W 0.2 0.1 0.1 P(pk) 0.05 t1 0.02 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Figure 11. Transient Thermal Response Curve. FDP6021P/FDB6021P Rev. B(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H2