FAIRCHILD FDW2507N

FDW2507N
Common Drain N-Channel 2.5V specified PowerTrench MOSFET
General Description
Features
This monolithic common drain N-Channel MOSFET has
been designed using Fairchild Semiconductor’s
advanced PowerTrench process to optimize the RDS(ON)
@ VGS = 2.5v on special TSSOP-8 lead frame with all
the drains on one side of the package.
• 7.5 A, 20 V.
RDS(ON) = 19 mΩ @ VGS = 4.5 V
RDS(ON) = 23 mΩ @ VGS = 2.5 V
• Isolated source and drain pins
• High performance trench technology for extremely
low RDS(ON) @ VGS = 2.5 V
Applications
• Li-Ion Battery Pack
• Low profile TSSOP-8 package
D
D
D
D
G2
S2
G1
S1
TSSOP-8
1
8
2
7
3
6
4
5
Pin 1
Absolute Maximum Ratings
Symbol
TA=25oC unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current
7.5
A
– Continuous
(Note 1a)
– Pulsed
30
Power Dissipation for Single Operation
PD
TJ, TSTG
(Note 1a)
1.6
(Note 1b)
1.1
Operating and Storage Junction Temperature Range
W
–55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
77
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
114
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
2507N
FDW2507N
13’’
12mm
3000 units
2003 Fairchild Semiconductor Corporation
FDW2507N Rev C2
FDW2507N
March 2003
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
ID = 250 µA
20
V
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
VGS = 0 V,
VDS = 16 V,
VGS = 0 V
1
IGSSF
Gate–Body Leakage, Forward
VGS = 12 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –12 V,
VDS = 0 V
–100
nA
1.5
V
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
ID = 250 µA, Referenced to 25°C
mV/°C
–13
µA
(Note 2)
ID = 250 µA
VDS = VGS,
ID = 250 µA, Referenced to 25°C
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
0.6
0.8
mV/°C
4
VGS = 4.5 V,
ID = 7.5 A
VGS = 2.5 V,
ID = 6.8 A
VGS = 4.5 V, ID = 7.5 A, TJ=125°C
15
17
20
mΩ
19
23
27
ID(on)
On–State Drain Current
VGS = 4.5 V,
VDS = 5 V
gFS
Forward Transconductance
VDS = 5 V,
ID = 7.5 A
30
31
A
VDS = 10 V,
f = 1.0 MHz
V GS = 0 V,
2152
pF
512
pF
263
pF
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
tf
(Note 2)
12
22
13
23
ns
Turn–Off Delay Time
35
56
ns
Turn–Off Fall Time
19
34
ns
20
28
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDD = 10 V,
VGS = 4.5 V,
VDS = 10 V,
VGS = 4.5 V
ID = 1 A,
RGEN = 6 Ω
ID = 7.5 A,
ns
nC
3
nC
5
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
VSD
trr
Qrr
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
VGS = 0 V, IS = 1.3 A
Voltage
Diode Reverse Recovery Time
IF = 7.5A
diF/dt = 100 A/µs
Diode Reverse Recovery Charge
1.3
A
1.2
V
(Note 2)
0.6
26
nS
(Note 2)
21
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
77°C/W when
mounted on a 1in2 pad
of 2 oz copper
b)
114°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDW2507N Rev C2
FDW2507N
Electrical Characteristics
FDW2507N
Typical Characteristics
1.8
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
20
ID, DRAIN CURRENT (A)
VGS = 4.5V
2.5V
3.5V
15
2.0V
10
1.5V
5
1.6
VGS = 2.0V
1.4
1.2
2.5V
3.0V
4.5V
0.8
0
0
0.5
1
1.5
0
2
5
Figure 1. On-Region Characteristics.
20
0.04
ID = 7.5A
VGS = 4.5V
RDS(ON), ON-RESISTANCE (OHM)
ID = 3.8A
1.4
1.2
1
0.8
0.6
-25
15
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
-50
10
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
3.5V
1
0
25
50
75
100
125
0.035
0.03
TA = 125oC
0.025
0.02
TA = 25oC
0.015
0.01
150
1
2
3
4
5
o
TJ, JUNCTION TEMPERATURE ( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
30
TA = -55oC
25oC
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
ID, DRAIN CURRENT (A)
25
125oC
20
15
10
5
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
0.5
1
1.5
2
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDW2507N Rev C2
FDW2507N
Typical Characteristics
3000
ID = 7.5A
VDS = 5V
10V
f = 1MHz
VGS = 0 V
2500
4
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
5
15V
3
2
1
CISS
2000
1500
COSS
1000
500
CRSS
0
0
0
5
10
15
20
25
0
4
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
12
16
20
Figure 8. Capacitance Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
50
100us
RDS(ON) LIMIT
ID, DRAIN CURRENT (A)
8
VDS, DRAIN TO SOURCE VOLTAGE (V)
1ms
10
10ms
100ms
1s
10s
DC
1
VGS = 4.5V
SINGLE PULSE
RθJA = 114oC/W
0.1
TA = 25oC
1
10
40
30
20
10
0
0.001
0.01
0.1
SINGLE PULSE
RθJA = 114°C/W
TA = 25°C
100
0.01
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.1
1
10
100
1000
t1, TIME (sec)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) + RθJA
RθJA =114 °C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDW2507N Rev C2
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I2