FFPF10UP60S tm 10 A, 600 V, Ultrafast Diode Features • Ultrafast Recovery trr = 40 ns (@ IF = 1 A) The FFPF10UP60S is an ultrafast diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications. It is specially suited for use in switching power supplies and industrial applicationa as welder and UPS application. • Max Forward Voltage, VF = 2.2 V (@ TC = 25°C) • 600 V Reverse Voltage and High Reliability • Avalanche Energy Rated • RoHS Compliant Applications • • • • General Purpose Switching Mode Power Supply Free-Wheeling Diode for Motor Application Power Switching Circuits TO-220F-2L 1 Absolute Maximum Ratings Symbol 1. Cathode 2. Anode 2 TC=25°C unless otherwise noted VRRM Parameter Peak Repetitive Reverse Voltage IF(AV) Average Rectified Forward Current IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave TJ, TSTG Operating Junction and Storage Temperature Value 600 Unit V 10 A 50 A - 65 to +150 °C Value 4.5 Unit °C/W @ TC = 60°C Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case Electrical Characteristics Symbol VF * IR * TC=25 °C unless otherwise noted Parameter Maximum Instantaneous Forward Voltage IF = 10 A IF = 10 A Maximum Instantaneous Reverse Current @ rated VR Min. Typ. Max. TC = 25 °C TC = 100 °C - - 2.2 2.0 TC = 25 °C TC = 100 °C - - 100 500 Units V µA trr Irr Qrr Reverse Recovery Time Reverse Recovery Current Reverse Recovery Charge (IF =1 A, di/dt = 100 A/µs) - 34 1.0 17 40 1.5 30 ns A nC trr Maximum Reverse Recovery Time (IF =10 A, di/dt = 200 A/µs) - 58 - ns WAVL Avalanche Energy (L = 40 mH) 20 - - mJ *Pulse Test: Pulse Width=300 µs, Duty Cycle=2% ©2004 Fairchild Semiconductor Corporation FFPF10UP60S Rev. A 1 www.fairchildsemi.com FFPF10UP60S 10 A, 600 V, Ultrafast Diode March 2004 1000 Reverse Current , I R [µA] Forward Current , IF [A] 30 10 o TC = 100 C o TC = 25 C 1 0.1 0.0 100 o TC = 100 C 10 1 o TC = 25 C 0.1 0.01 1E-3 0.5 1.0 1.5 2.0 2.5 100 3.0 400 500 600 70 50 Reverse Recovery Time , trr [ns] Typical Capacitance at 0V = 51.4 pF 25 1 0.1 1 10 IF = 10A o TC = 25 C 60 50 40 100 100 500 di/dt [A/µs] Reverse Voltage , VR [V] Figure 4. Typical Reverse Recovery Time vs. di/dt Figure 3. Typical Junction Capacitance 9 IF = 10A 8 TC = 25 C o 7 6 5 4 3 2 1 0 100 500 5 0 40 60 80 100 120 140 160 o di/dt [A/µs] Case Temperature , TC [ C] Figure 6. Forward Current Derating Curve Figure 5. Typical Reverse Recovery Current vs. di/dt ©2004 Fairchild Semiconductor Corporation FFPF10UP60S Rev. A 10 C D Average Forward Current , IF(AV) [A] 10 Reverse Recovery Current , Irr [A] 300 Figure 2. Typical Reverse Current vs. Reverse Voltage Figure 1. Typical Forward Voltage Drop vs. Forward Current Capacitance , Cj [pF] 200 Reverse Voltage , VR [V] Forward Voltage , VF [V] 2 www.fairchildsemi.com FFPF10UP60S 10 A, 600 V, Ultrafast Diode Typical Characteristics TO-220F-2L ø3.18 ±0.10 2.54 ±0.20 3.30 ±0.10 10.16 ±0.20 MAX1.47 15.87 ±0.20 (1.80) (6.50) (1.00x45°) 12.00 ±0.20 9.75 ±0.30 15.80 ±0.20 6.68 ±0.20 (0.70) 2.76 ±0.20 0.80 ±0.10 0.35 ±0.10 2.54TYP [2.54 ±0.20] 9.40 ±0.20 +0.10 0.50 –0.05 4.70 ±0.20 2.54TYP [2.54 ±0.20] Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation FFPF10UP60S Rev. A 3 www.fairchildsemi.com FFPF10UP60S 10 A, 600 V, Ultrafast Diode Package Dimensions FFPF10UP60S 10 A, 600 V, Ultrafast Diode ©2004 Fairchild Semiconductor Corporation FFPF10UP60S Rev. A 4 www.fairchildsemi.com