FGA30N60LSD tm Features General Description • Low saturation voltage: VCE(sat) =1.1V @ IC = 30A The FGA30N60LSD is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. • High Input Impedance • Low Conduction Loss Applications • Solar Inverters • UPS, Welder C G E Absolute Maximum Ratings Symbol Description FGA30N60LSD Units VCES Collector-Emitter Voltage 600 V VGES Gate-Emitter Voltage ± 20 V IC Collector Current @ TC = 25°C 60 A Collector Current @ TC = 100°C 30 A ICM (1) Pulsed Collector Current 90 A IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave 150 A PD Maximum Power Dissipation @ TC = 25°C 480 W Maximum Power Dissipation @ TC = 100°C 192 W TJ Operating Junction Temperature -55 to +150 °C Tstg Storage Temperature Range -55 to +150 °C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units RθJC(IGBT) Thermal Resistance, Junction-to-Case -- 0.26 °C/W RθJC(Diode) Thermal Resistance, Junction-to-Case -- 0.92 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W ©2008 Fairchild Semiconductor Corporation FGA30N60LSD Rev. A 1 www.fairchildsemi.com FGA30N60LSD October 2008 Device Marking Device Package Packaging Type FGA30N60LSD FGA30N60LSDTU TO-3PN Tube Electrical Characteristics of the IGBT Symbol Parameter Max Qty Qty per Tube per Box 30ea - TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 -- -- V -- 0.6 -- V/°C Off Characteristics BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA ∆BVCES/ ∆TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250uA ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 uA IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ±250 nA 4.0 5.5 7.0 V On Characteristics VGE(th) G-E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage IC = 250uA, VCE = VGE IC = 30A, VGE = 15V -- 1.1 1.4 V IC = 30A, VGE = 15V, TC = 125°C -- 1.0 -- V IC = 60 A, VGE = 15V -- 1.3 -- V -- 3550 -- pF VCE = 30V, VGE = 0V, f = 1MHz -- 245 -- pF -- 90 -- pF 18 -- ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time -- tr Rise Time -- 46 -- ns td(off) Turn-Off Delay Time -- 250 -- ns tf Fall Time Eon Turn-On Switching Loss Eoff td(on) VCC = 400 V, IC = 30A, RG = 6.8Ω, VGE = 15V, Inductive Load, TC = 25°C -- 1.3 2.0 us -- 1.1 -- mJ Turn-Off Switching Loss -- 21 -- mJ Turn-On Delay Time -- 17 -- ns tr Rise Time -- 45 -- ns td(off) Turn-Off Delay Time -- 270 -- ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector Charge Le Internal Emitter Inductance VCC = 400 V, IC = 30A, RG =6.8Ω, VGE = 15V, Inductive Load, TC = 125°C VCE = 300 V, IC = 30A, VGE = 15V Measured 5mm from PKG 2 FGA30N60LSD Rev. A -- 2.6 -- us -- 1.1 -- mJ -- 36 -- mJ -- 225 -- nC -- 30 -- nC -- 105 -- nC -- 7 -- nH www.fairchildsemi.com FGA30N60LSD Package Marking and Ordering Information Parameter TC = 25°C unless otherwise noted Min. Typ. Max Units VFM IF = 15A IF = 15A Conditions TC = 25 °C TC = 125 °C - 1.8 1.6 2.2 - V V IRM VR = 600V TC = 25 °C - - 100 µA trr IF =1A, di/dt = 100A/µs, VCC = 30V IF =15A, di/dt = 100A/µs, VCC = 390V TC = 25 °C TC = 25 °C - - 35 40 ns ns ta tb Qrr IF =15A, di/dt = 100A/µs, VCC = 390V TC = 25 °C TC = 25 °C TC = 25 °C - 18 13 27.5 - ns ns nC 3 FGA30N60LSD Rev. A www.fairchildsemi.com FGA30N60LSD Electrical Characteristics of the Diode FGA30N60LSD Typical Performance Characteristics Figure 1.Typical Output Characteristics Figure 2. Typical Saturation Voltage Characteristics 90 90 o 60 30 15V 12V 10V 8V 60 30 0 0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 4 0 Figure 3. Typical Saturation Voltage Characteritics 4 90 Common Emitter VCE = 20V Common Emitter VGE = 15V o o TC = 25 C o TC = 125 C 60 TC = 25 C Collector Current, IC [A] Collector Current, IC [A] 1 2 3 Collector-Emitter Voltage, VCE [V] Figure 4. Transfer characteristics 90 o TC = 125 C 60 30 30 0 0 0 1 2 Collector-Emitter Voltage, VCE [V] 0 3 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 2 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12 Figure 6. Saturation Voltage vs. Vge 20 1.4 Common Emitter VGE = 15V Common Emitter Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] VGE = 20V TC = 125 C 15V 12V 10V 8V Collector Current, IC [A] Collector Current, IC [A] o VGE = 20V TC = 25 C 60A 1.2 30A 1.0 IC = 15A 0.8 0.6 25 o T = 25 C C 16 12 8 4 60A 30A IC = 15A 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] 0 4 FGA30N60LSD Rev. A 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com (Continued) Figure 7. Saturation Voltage vs. Vge 20 FGA30N60LSD Typical Performance Characteristics Figure 8. Capacitance characteristics 13000 10000 Common Emitter TC = 125 C Cies 16 Capacitance [pF] Collector-Emitter Voltage, VCE [V] o 12 8 30A 60A TC = 25 C Cres 4 IC = 15A 100 50 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 0 Figure 9. Gate Charge Characteristics 5 10 15 20 25 Collector-Emitter Voltage, VCE [V] 30 Figure 10. SOA Characteeristics 300 15 Common Emitter IC = 30A o 12 TC = 25 C Ic MAX (Pulsed) 100 Vcc = 100V 9 Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] o 1000 0 300V 200V 6 3 0 0 50 100 150 200 Gate Charge, Qg [nC] 10 1ms 1 Single Nonrepetitive o Pulse TC = 25 C Curves must be derated linearly with increase in temperature DC Operation 1 10 100 1000 Collector-Emitter Voltage, VCE [V] 200 Vcc = 400V load Current : peak of square wave 100 Switching Time [ns] 60 50 40 30 20 10 100µs Figure 12. Turn-On Characteristics vs. Gate Resistance 80 70 50µs Ic MAX (Continuous) 0.1 0.1 250 Figure 11. Load Current Vs. Frequency Load Current [A] Common Emitter VGE = 0V, f = 1MHz Coes tr Common Emitter VCC = 400V, VGE = 15V IC = 30A td(on) Duty cycle : 50% o Tc = 100 C Powe Dissipation = 192W 0 0.1 1 10 100 Frequency [kHz] o TC = 25 C o TC = 125 C 10 1000 0 20 30 40 50 Gate Resistance, RG [Ω] 5 FGA30N60LSD Rev. A 10 www.fairchildsemi.com (Continued) Figure 13. Turn-Off Characteristics vs. Gate Resistance Figure 14. Turn-On Characteristics vs. Collector Current 500 3000 Common Emitter VGE = 15V, RG = 6.8Ω o TC = 25 C Switching Time [ns] Switching Time [ns] o tf 1000 Common Emitter VCC = 400V, VGE = 15V IC = 30A td(off) TC = 125 C 100 tr td(on) 10 o TC = 25 C o TC = 125 C 100 0 10 20 30 40 20 50 30 40 Figure 15. Turn-Off Characteristics vs. Collector Current 60 70 80 Figure 16. Switching Loss vs Gate Resistance 6000 500 Common Emitter VCC = 400V, VGE = 15V IC = 30A Switching Loss [mJ] tf Switching Time [ns] 50 Collector Current, IC [A] Gate Resistance, RG [Ω] 1000 Common Emitter VGE = 15V, RG = 6.8Ω o TC = 25 C o td(off) TC = 125 C o 100 TC = 25 C o Eoff TC = 125 C 10 Eon 100 20 30 40 50 60 70 1 80 Collector Current, IC [A] 5 10 15 20 25 30 35 40 45 50 Gate Resistance, RG [Ω] Figure 17.Switching Loss vs Collector Current Figure 18. Turn-Off Switching SOA Characteristics 200 100 100 Collector Current, IC [A] Switching Loss [mJ] Eoff 10 Eon 1 Common Emitter VGE = 15V, RG = 6.8Ω 10 o TC = 25 C Safe Operating Area o VGE = 15V, TC = 125 C o TC = 125 C 0.1 10 1 20 30 40 50 60 70 80 1 Collector Current, IC [A] 6 FGA30N60LSD Rev. A 10 100 1000 Collector-Emitter Voltage, VCE [V] www.fairchildsemi.com FGA30N60LSD Typical Performance Characteristics FGA30N60LSD Figure 19. Transient Thermal Impedance of IGBT 1 Thermal Response [Zthjc] 0.5 0.1 0.2 0.1 0.05 0.01 0.02 PDM t1 0.01 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC single pulse 1E-3 1E-5 1E-4 1E-3 0.01 0.1 Rectangular Pulse Duration [sec] Figure 20. Typical Forward Voltage Drop 10 Figure 21. Typical Reverse Current 100 1E-4 REVERSE CURRENT, IR [A] FPRWARD CURRENT, IF [A] 1 10 o TC=125 C 1 o TC=75 C 1E-5 o TC = 125 C o 1E-6 TC = 75 C 1E-7 o TC = 25 C 1E-8 o TC=25 C 0.1 0.0 1E-9 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0 FORWARD VOLTAGE, VF [V] 100 200 300 400 500 600 REVERSE VOLTAGE, VR [V] REVERSE RECOVERY TIME, trr [ns] Figure 22. Typical Reverse Recovery Time 200 190 180 170 160 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 100 IF = 15A o TC = 125 C o TC = 75 C o TC = 25 C 200 300 400 500 di/dt [A/µs] 7 FGA30N60LSD Rev. A www.fairchildsemi.com FGA30N60LSD 8 FGA30N60LSD Rev. 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