EUDYNA FLM1011-20F

FLM1011-20F
X,Ku-Band Internally Matched FET
FEATURES
・High Output Power: P1dB=43.0dBm(Typ.)
・High Gain: G1dB=7.0dB(Typ.)
・High PAE: ηadd=27%(Typ.)
・Broad Band: 10.7～11.7GHz
・Impedance Matched Zin/Zout = 50Ω
・Hermetically Sealed Package
DESCRIPTION
The FLM1011-20F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25°C)
Symbol
Rating
Unit
Drain-Source Voltage
Item
VDS
15
V
Gate-Source Voltage
VGS
-5
V
93.7
W
Total Power Dissipation
PT
Storage Temperature
Tstg
-65 to +175
Channel Temperature
Tch
175
C
o
C
o
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25°C)
Item
Symbol
Unit
Limit
Condition
≤10
DC Input Voltage
VDS
Forward Gate Current
IGF
RG=25Ω
Reverse Gate Current
IGR
RG=25Ω
V
≤64
≥-11.2
mA
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C)
Item
Test Conditions
Symbol
Min.
-
Limit
Typ.
10.8
Max.
16.2
Unit
A
Drain Current
IDSS
VDS=5V, VGS=0V
Transconductance
gm
VDS=5V, IDS=6480mA
-
10
-
S
Pinch-off Voltage
Vp
-1.5
-3.0
V
VGSO
VDS=5V, IDS=600mA
IGS=-600µA
-0.5
Gate-Source Breakdown Voltage
-5.0
-
-
V
Output Power at 1dB G.C.P.
P1dB
42
43
-
dBm
Power Gain at 1dB G.C.P.
G1dB
6.0
7.0
-
dB
-
6.0
7.2
A
-
27
-
%
-
-
1.2
dB
-42.0
-45.0
-
dBc
1.4
1.6
Idsr
Drain Current
Power-added Efficiency
ηadd
Gain Flatness
∆G
VDS=10V
f=10.7 - 11.7 GHz
IDS=0.60IDSS(typ)
Zs=ZL=50Ω
3rd Order Intermodulation
Distortion
IM3
f= 11.7 GHz
Δf=10MHz, 2-tone Test
Pout=31.0dBm (S.C.L.)
Thermal Resistance
Rth
Channel to Case
Channel Temperature Rise
CASE STYLE: IK
ESD
Class III
∆Tch
C /W
o
oC
100
10V x Idsr X Rth
G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level
2000V　~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kW)
Edition 1.2
September 2004
-
1
FLM1011-20F
X-Band Internally Matched FET
Out Power & P.A.E. vs. Input Power
VDS =10V, IDS (DC)=6A,f=11.2GHz
90
44
80
Output Power [dBm]
Total Power Dissapation [W]
70
46
70
60
50
40
30
20
60
Output Power
42
50
40
40
38
30
36
34
10
0
0
50
100
150
Case Temperature [oC]
10
32
200
0
24
26
28
30
34
36
38
40
IMD vs. Output Power
VDS=10V, IDS(DC)=6A
f1=11.7GHz, f2=11.71GHz
-20
45
P1dB
-25
43
38dBm
-30
36dBm
-35
42
34dBm
41
40
32dBm
39
IM3 & 5 [dBc]
44
Output Power [dBm]
32
Input Power [dBm]
Output Power vs. Frequency
VDS=10V, IDS(DC)=6A
38
10.45
20
P.A.E.
Power Added Efficiency
[%]
POWER DERATING CURVE
100
IM3
-40
-45
-50
IM5
-55
-60
-65
-70
10.7
10.95
11.2
11.45
Frequency [GHz]
11.7
23
11.95
2
25
27
29
31
33
35
Output Power [dBm]
S.C.L. [Single Carrier Level]
37
39
FLM1011-20F
X-Band Internally Matched FET
■ S-PARAMETER
+90°
+50j
+25j
+100j
10Ω
11.2GHz
25
10.2G H
+10j
10.7G H z
+250j
11.2GHz
11.7GHz
0
10.7G H Z
11.7G H z
∞
±180° 3
11.7G H z
11.2G H Z
11.2G H
10.7GHz
10.7
2
Scale for |S21|
11.7GHz
10.2GHz
12.2GHz
-250j
-10j
12.2GHz
10.2GHz
10
-25j
-100j
S 11
-50j
0.2
-90°
S 22
VDS=10V, IDS(DC)=6.0A
S 21
S 12
S 11
S 12
S 21
S 22
F re q.
[G H z]
M AG
ANG
M AG
ANG
M AG
ANG
M AG
ANG
10.2
10.3
10.4
10.5
10.6
10.7
10.8
10.9
11
11.1
11.2
11.3
11.4
11.5
11.6
11.7
11.8
11.9
12
12.1
12.2
0.521
0.516
0.508
0.503
0.500
0.489
0.479
0.456
0.436
0.399
0.362
0.310
0.258
0.196
0.148
0.138
0.171
0.236
0.296
0.358
0.407
112.49
98.68
84.31
70.95
56.68
43.24
28.27
13.87
-2.48
-18.79
-36.36
-55.88
-77.82
-105.52
-141.44
166.07
121.58
89.39
65.33
46.14
29.27
2.228
2.263
2.281
2.301
2.334
2.356
2.406
2.450
2.488
2.519
2.542
2.560
2.566
2.556
2.518
2.452
2.366
2.251
2.117
1.983
1.843
-113.83
-127.73
-141.96
-156.16
-170.00
175.80
161.30
146.67
131.08
115.49
99.63
83.45
66.63
49.29
31.92
14.11
-3.80
-21.35
-39.04
-56.37
-72.76
0.051
0.050
0.051
0.051
0.052
0.053
0.054
0.055
0.058
0.062
0.065
0.072
0.076
0.084
0.091
0.100
0.105
0.115
0.123
0.131
0.140
-125.01
-136.72
-150.92
-165.30
-178.71
165.80
150.63
133.33
116.65
99.59
80.88
63.06
45.29
26.43
9.71
-7.99
-24.24
-40.28
-55.69
-69.11
-82.75
0.267
0.316
0.366
0.408
0.436
0.449
0.459
0.469
0.469
0.457
0.421
0.377
0.328
0.277
0.218
0.143
0.071
0.047
0.083
0.122
0.167
57.91
47.11
37.85
30.57
23.88
16.49
8.08
-0.73
-9.20
-17.21
-26.15
-36.80
-49.42
-62.34
-74.53
-88.71
-115.34
162.88
113.81
87.31
66.62
3
0°
Scale for |S 12|
12.2
FLM1011-20F
X-Band Internally Matched FET
■ Package Out Line
Case Style : IK
PIN ASSIGNMENT
1 : GATE
2 : SOURCE
3 : DRAIN
4 : SOURCE
Unit : mm
4
FLM1011-20F
X-Band Internally Matched FET
For further information please contact :
CAUTION
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte. Ltd.
Hong Kong Branch
Rm.1101,Ocean Centre, 5 Canton Road
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
・Do not put these products into the mouth.
・Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or
swallowed.
・Observe government laws and company regulations when
discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste
procedures.
Eudyna Devices Inc. reserves the right to change products and
specifications without notice.The information does not convey any
license under rights of Eudyna Devices Inc. or others.
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
Eudyna Devices Inc.
1000 Kamisukiahara, showa-cho
Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
TEL +81-55-275-4411
FAX +81-55-275-9461
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama,244-0845,Japan
TEL +81-45-853-8156
FAX +81-45-853-8170
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