FLM7179-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.5dBm (Typ.) High Gain: G1dB = 9.0dB (Typ.) High PAE: ηadd = 35% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package DESCRIPTION The FLM7179-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Symbol Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 42.8 W Total Power Dissipation Tc = 25°C PT Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch 175 °C Eudyna recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 32.0 and -4.4 mA respectively with gate resistance of 100Ω. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Symbol IDSS Min. Limit Typ. Max. Unit VDS = 5V, VGS = 0V - 3400 5200 mA Test Conditions Transconductance gm VDS = 5V, IDS = 2200mA - 3400 - mS Pinch-off Voltage Vp VDS = 5V, IDS = 170mA -0.5 -1.5 -3.0 V IGS = -170µA -5.0 - - V 38.5 39.5 - dBm 8.0 9.0 - dB Gate Source Breakdown Voltage VGSO Output Power at 1dB G.C.P. P1dB Power Gain at 1dB G.C.P. G1dB Drain Current Power-added Efficiency Idsr ηadd VDS =10V, IDS = 0.65 IDSS (Typ.), f = 7.1 ~ 7.9 GHz, ZS=ZL= 50 ohm - 2200 2600 mA - 35 - % - - ±0.6 dB -44 -46 - dBc Gain Flatness ∆G 3rd Order Intermodulation Distortion IM3 f = 7.9 GHz, ∆f = 10 MHz 2-Tone Test Pout = 28.5dBm S.C.L. Thermal Resistance Rth Channel to Case - 3.0 3.5 °C/W ∆Tch 10V x Idsr x Rth - - 80 °C Channel Temperature Rise CASE STYLE: IB Edition 1.2 August 2004 G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level 1 FLM7179-8F C-Band Internally Matched FET POWER DERATING CURVE OUTPUT POWER & IM3 vs. INPUT POWER 40 34 30 20 10 0 50 100 150 200 VDS=10V f1 = 7.9 GHz f2 = 7.91 GHz 2-tone test 32 -25 Pout 30 -30 28 -35 26 -40 IM3 24 -45 22 -50 20 -55 IM3 (dBc) 36 Output Power (S.C.L.) (dBm) Total Power Dissipation (W) 50 Case Temperature (°C) 18 13 -60 15 17 19 21 23 25 27 Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level OUTPUT POWER vs. INPUT POWER OUTPUT POWER vs. FREQUENCY 41 VDS=10V f = 7.5 GHz Pin=31.5dBm 29.5dBm 39 38 27.5dBm 37 36 25.5dBm 39 Pout 37 45 35 33 30 ηadd 15 31 35 29 7.1 7.3 7.5 7.7 7.9 0 21 Frequency (GHz) 23 25 27 29 Input Power (dBm) 2 31 ηadd (%) 40 Output Power (dBm) Output Power (dBm) VDS=10V 41 P1dB FLM7179-8F C-Band Internally Matched FET S11 S22 +j50 S21 S12 +90° +j100 +j25 7.6 7.7 7.5 7.3 10 7.5 7.4 7.6 7.7 7.4 7.6 7.7 7.8 7.5 7.2 7.9 50Ω 7.4 8.0 8.1 7.1 7.3 7.2 7.1 7.0 -j10 7.8 +j250 7.6 7.7 7.8 7.0 6.9 GHz 250 180° 7.9 7.9 7.2 1 7.3 3 7.2 -j250 8.1 7.1 8.0 4 0° SCALE FOR |S21| 8.1 7.0 6.9 GHz 8.1 6.9 GHz 0.1 7.0 -j25 2 8.0 7.1 8.0 7.9 7.8 7.3 -j100 0.2 SCALE FOR |S12| 0 7.5 7.4 +j10 6.9 GHz -90° -j50 S11 S-PARAMETERS VDS = 10V, IDS = 2200mA S21 S12 MAG ANG MAG ANG FREQUENCY (MHZ) MAG 6900 .583 8.7 3.108 -71.7 .091 7000 .504 -18.5 3.141 -97.1 7100 .410 -47.7 3.170 7200 .323 -85.2 7300 .259 7400 ANG S22 MAG ANG -112.1 .373 -95.0 .097 -134.9 .343 -125.7 -122.4 .102 -158.3 .318 -159.5 3.217 -149.4 .105 175.8 .311 161.9 -128.8 3.251 -176.6 .104 151.2 .331 123.8 .237 -177.4 3.232 156.3 .101 127.2 .373 91.6 7500 .245 139.5 3.214 129.9 .098 102.8 .420 66.0 7600 .262 103.7 3.188 103.9 .095 79.5 .461 44.1 7700 .261 71.7 3.133 78.3 .089 56.0 .496 24.5 7800 .237 40.0 3.094 52.8 .086 31.9 .524 6.3 7900 .199 4.2 3.065 27.4 .081 8.1 .554 -11.2 8000 .151 -44.6 3.037 1.9 .077 -15.5 .586 -28.4 8100 .161 -110.9 2.989 -24.9 .072 -41.8 .616 -45.4 3 FLM7179-8F C-Band Internally Matched FET 2.0 Min. (0.079) Case Style "IB" Metal-Ceramic Hermetic Package 1 0.1 (0.004) 2 12.9±0.2 (0.508) 2-R 1.6±0.15 (0.063) 3 2.6±0.15 (0.102) 2.0 Min. (0.079) 0.6 (0.024) 5.2 Max. (0.205) 1.45 (0.059) 0.2 Max. (0.008) 10.7 (0.421) 1. Gate 2. Source (Flange) 3. Drain 12.0 (0.422) Unit: mm(inches) 17.0±0.15 (0.669) 21.0±0.15 (0.827) For further information please contact: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: www.us.eudyna.com • Do not put this product into the mouth. Eudyna Devices Europe Ltd. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 4