FLM7179-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm (Typ.) High Gain: G1dB = 9.0dB (Typ.) High PAE: ηadd = 38% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package DESCRIPTION The FLM7179-12F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Condition Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 57.6 W Total Power Dissipation Tc = 25°C PT Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch 175 °C Min. Limit Typ. Max. Unit VDS = 5V, VGS = 0V - 5000 7500 mA Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 32.0 and -5.6 mA respectively with gate resistance of 50Ω. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Symbol IDSS Test Conditions Transconductance gm VDS = 5V, IDS = 3250mA - 5000 - mS Pinch-off Voltage Vp VDS = 5V, IDS = 250mA -0.5 -1.5 -3.0 V IGS = -250µA -5.0 - - V 40.5 41.5 - dBm 8.0 9.0 - dB Gate Source Breakdown Voltage VGSO Output Power at 1dB G.C.P. P1dB Power Gain at 1dB G.C.P. G1dB Drain Current Power-added Efficiency Idsr ηadd VDS =10V, IDS = 0.65IDSS (Typ.), f = 7.1 ~ 7.9 GHz, ZS=ZL= 50 ohm - 3250 4000 mA - 38 - % - - ±0.6 dB -44 -46 - dBc Gain Flatness ∆G 3rd Order Intermodulation Distortion IM3 f = 7.9 GHz, ∆f = 10 MHz 2-Tone Test Pout = 30.5dBm S.C.L. Thermal Resistance Rth Channel to Case - 2.3 2.6 °C/W 10V x Idsr x Rth - - 80 °C Channel Temperature Rise ∆Tch CASE STYLE: IK Edition 1.3 August 2004 G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level 1 FLM7179-12F C-Band Internally Matched FET OUTPUT POWER & IM3 vs. INPUT POWER 60 Output Power (S.C.L.) (dBm) Total Power Dissipation (W) 36 45 30 15 0 50 100 150 200 Case Temperature (°C) 34 VDS=10V f1 = 7.9 GHz f2 = 7.91 GHz 2-tone test 32 -25 Pout 30 -30 28 -35 -40 26 IM3 24 -45 22 -50 20 -55 IM3 (dBc) POWER DERATING CURVE -60 18 12 14 16 18 20 22 24 26 Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level OUTPUT POWER vs. INPUT POWER 43 VDS=10V P1dB 41 Output Power (dBm) Output Power (dBm) 42 Pin=33dBm 42 31dBm 40 39 29dBm 38 37 36 26dBm 7.3 7.5 7.7 40 50 Pout 38 40 36 30 34 20 ηadd 10 32 35 7.1 VDS=10V f = 7.5 GHz 30 7.9 0 22 Frequency (GHz) 24 26 28 30 Input Power (dBm) 2 32 ηadd (%) OUTPUT POWER vs. FREQUENCY FLM7179-12F C-Band Internally Matched FET S11 S22 +j50 S21 S12 +90° +j100 +j25 7.5 7.7 7.3 +j250 7.1 7.3 7.1 7.3 7.9 0 25 7.7 250 180° 3 4 6.9 GHz 1 2 7.1 6.9 GHz -j250 7.7 0.1 7.9 -j25 0° 8.0 6.9 GHz 8.0 8.0 7.9 SCALE FOR |S21| 7.5 7.3 -j10 7.7 7.1 8.0 7.5 7.9 7.5 -j100 SCALE FOR |S12| 6.9 GHz +j10 0.2 -90° -j50 S11 S-PARAMETERS VDS = 10V, IDS = 3250mA S21 S12 MAG ANG MAG ANG FREQUENCY (MHZ) MAG ANG 6900 .425 99.1 3.694 -164.7 .056 156.4 .408 -64.4 7000 .418 76.0 3.616 179.1 .060 141.9 .398 -72.6 7100 .424 58.4 3.553 167.2 .063 131.9 .378 -78.5 7200 .439 38.0 3.477 151.7 .067 118.1 .347 -86.9 7300 .460 19.0 3.409 136.2 .072 101.9 .304 -96.1 7400 .483 0.7 3.336 120.6 .074 88.1 .252 -106.9 7500 .502 -16.4 3.262 104.8 .077 73.5 .190 -118.4 7600 .520 -33.0 3.180 89.3 .077 59.3 .127 -133.2 7700 .535 -49.4 3.094 73.5 .079 44.3 .062 -154.6 7800 .546 -65.3 3.007 57.6 .078 28.8 .023 107.8 7900 .554 -80.8 2.913 41.8 .078 12.6 .073 40.9 8000 .560 -96.4 2.819 25.7 .078 -1.3 .129 18.5 3 S22 MAG ANG FLM7179-12F C-Band Internally Matched FET 2.0 Min. (0.079) Case Style "IK" Metal-Ceramic Hermetic Package 0.1 (0.004) 2 3 2.0 Min. (0.079) 4-R 1.3±0.15 (0.051) 17.4±0.3 (0.685) 8.0±0.2 (0.315) 1 0.6 (0.024) 1.4 (0.055) 14.9 (0.587) 20.4±0.3 (0.803) 2.4±0.15 (0.094) 5.5 Max. (0.217) 1. Gate 2. Source (Flange) 3. Drain Unit: mm(inches) 24±0.5 (0.945) For further information please contact: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: www.us.eudyna.com • Do not put this product into the mouth. Eudyna Devices Europe Ltd. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 4