EUDYNA FLK057WG

FLK057WG
X, Ku Band Power GaAs FET
FEATURES
•
•
•
•
•
High Output Power: P1dB = 27.0dBm(Typ.)
High Gain: G1dB = 7.0dB(Typ.)
High PAE: ηadd = 32%(Typ.)
Proven Reliability
Hermetic Metal/Ceramic Package
DESCRIPTION
The FLK057WG is a power GaAs FET that is designed for general
purpose applications in the Ku-Band frequency range as it provides
superior power, gain, and efficiency.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Condition
Symbol
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
3.75
W
Total Power Dissipation
Tc = 25°C
PT
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 4.4 and -0.25 mA respectively with
gate resistance of 1000Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Symbol
IDSS
Test Conditions
Min.
Limit
Typ. Max.
Unit
VDS = 5V, VGS = 0V
-
200
300
mA
Transconductance
gm
VDS = 5V, IDS =125mA
-
100
-
mS
Pinch-off Voltage
Vp
VDS = 5V, IDS =10mA
-1.0
-2.0
-3.5
V
-5
-
-
V
26.0
27.0
-
dBm
6.0
7.0
-
dB
-
32
-
%
-
27
-
dBm
-
8
-
dB
-
34
-
%
-
20
40
°C/W
Gate Source Breakdown Voltage
VGSO
Output Power at 1dB G.C.P.
P1dB
Power Gain at 1dB G.C.P.
G1dB
Power-added Efficiency
ηadd
Output Power at 1dB G.C.P.
P1dB
Power Gain at 1dB G.C.P.
G1dB
Power-added Efficiency
ηadd
Thermal Resistance
Rth
IGS = -10µA
VDS = 10V,
IDS = 0.6 IDSS (Typ.),
f = 14.5 GHz
VDS = 10V,
IDS = 0.6 IDSS (Typ.),
f = 12 GHz
Channel to Case
CASE STYLE: WG
Edition 1.2
August 1999
G.C.P.: Gain Compression Point
1
FLK057WG
X, Ku Band Power GaAs FET
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
POWER DERATING CURVE
VGS =0V
200
Drain Current (mA)
3
2
1
-0.5V
150
-1.0V
100
-1.5V
50
-2.0V
50
100
150
0
200
f = 14.5GHz
IDS ≈ 0.6 IDSS
VDS=10V
VDS=8.5V
8
10
f = 14.5 GHz
IDS ≈ 0.6 IDSS
ηadd
19
40
20
ηadd (%)
Pout
P1dB (dBm)
28
23
21
6
P1dB & ηadd vs. VDS
OUTPUT POWER vs. INPUT POWER
25
4
Drain-Source Voltage (V)
Case Temperature (°C)
27
2
27
P1dB
26
25
24
30
23
10
20
8
10 12 14 16 18 20
40
ηadd
9
10
Drain-Source Voltage (V)
Input Power (dBm)
2
ηadd (%)
0
Output Power (dBm)
Total Power Dissipation (W)
4
FLK057WG
X, Ku Band Power GaAs FET
S11
S22
+j50
+j10
16GHz
15
9
14 8
SCALE FOR |S12|
+j100
+j25
11
10
12
13
S21
S12
+90°
+j250
13
.08
.06
.04
.02
16GHz
0
12
10
25
50Ω
11 16GHz
10
100
180°
250
.04
15
9
14
13
12
15
-j100
11
11
12
16GHz
-j25
0°
1.6
9
10
10
-j250
8
1.2
8
8
15
9
-j10
.08
SCALE FOR |S21|
14
13
14
-j50
-90°
S11
S-PARAMETERS
VDS = 10V, IDS = 120mA
S21
S12
MAG
ANG
MAG
ANG
FREQUENCY
(MHZ)
MAG
ANG
500
.973
-47.8
7.249
147.9
.016
1000
.941
-85.1
5.946
121.8
8000
.816
148.5
1.199
9000
.787
139.7
10000
.740
11000
S22
MAG
ANG
60.6
.545
-20.3
.026
38.1
.519
-38.1
-21.6
.033
-41.3
.745
-149.2
1.125
-35.4
.037
-40.9
.773
-157.3
129.3
1.149
-49.4
.045
-40.5
.796
-163.0
.642
112.7
1.251
-67.7
.058
-46.2
.819
-170.6
12000
.474
86.4
1.346
-91.6
.075
-58.5
.845
178.7
13000
.249
43.8
1.351
-119.6
.089
-75.4
.868
166.3
14000
.189
-83.7
1.227
-150.6
.095
-95.0
.878
155.2
15000
.480
-140.8
.980
-179.3
.093
-112.5
.868
148.7
16000
.689
-163.9
.752
158.6
.092
-125.9
.840
141.4
Download S-Parameters, click here
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FLK057WG
X, Ku Band Power GaAs FET
2-Ø1.6±0.01
(0.063)
1.0 Min.
(0.039)
Case Style "WG"
Metal-Ceramic Hermetic Package
2.8
(0.11)
0.1±0.05
(0.004)
2
2.5±0.15
(0.098)
1
3
0.03
8.5±0.2
(0.335)
0.6
0.8±0.1
(0.031)
1.0 Min.
(0.039)
0.5
(0.020)
6.1±0.1
(0.240)
2.5 Max.
(0.098)
1.
2.
3.
4.
Gate
Source
Drain
Source
Unit: mm(inches)
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
4