NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FXT655 ISSUE 1 FEB 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt B C E E-Line TO92 Compatible REFER TO ZTX655 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 150 V Collector-Emitter Voltage VCEO 150 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 2 A Continuous Collector Current IC 1 A Power Dissipationat Tamb =25°C Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 150 V IC=100µ A, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 150 V IC=10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µ A, IC=0 Collector Cut-Off Current ICBO 100 nA VCB=125V, IE=0 Emitter Cut-Off Current IEBO 100 nA VEB=3V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 0.5 0.5 V V IC=500mA, IB=50mA* IC=1A, IB=200mA* Base-Emitter Saturation Voltage VBE(sat) 1.1 V IC=500mA, IB=50mA* Base-Emitter Turn-On Voltage VBE(on) 1 V IC=500mA, VCE=5V* Static Forward Current hFE Transfer Ratio 50 50 20 Transition Frequency fT 30 Output Capacitance Cobo TYP. MAX. IC=10mA, VCE=5V IC=500mA, VCE=5V* IC=1A, VCE=5V* 20 MHz IC=10mA, VCE=20V f=20MHz pF VCB=20V, f=1MHz *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% 3-49