H5N2504DL, H5N2504DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1106-0200 (Previous: ADE-208-1375A) Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance Low leakage current High speed switching Low gate charge Avalanche ratings Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 4 D 4 1 2 1 2 3 Rev.2.00 Sep 07, 2005 page 1 of 7 1. Gate 2. Drain 3. Source 4. Drain G 3 S H5N2504DL, H5N2504DS Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSS Value 250 Unit V VGSS ID ±20 7 V A 28 7 A A 28 7 A A 30 4.17 W °C/W 150 –55 to +150 °C °C Gate to source voltage Drain current Note 1 Drain peak current Body-drain diode reverse drain current ID (pulse) IDR Body-drain diode reverse drain peak current Avalanche current IDR (pulse) Note 3 IAP Note 1 Note 2 Channel dissipation Channel to case thermal Impedance Pch θ ch-c Channel temperature Storage temperature Tch Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol V (BR) DSS Min 250 Typ — Max — Unit V Test Conditions ID = 10 mA, VGS = 0 IGSS IDSS — — — — ±0.1 1 µA µA VGS = ±20 V, VDS = 0 VDS = 250 V, VGS = 0 Gate to source cutoff voltage Static drain to source on state resistance VGS (off) RDS (on) 1.0 — — 0.48 2.5 0.63 V Ω VDS = 10 V, ID = 1 mA Note 4 ID = 3.5 A, VGS = 10 V Forward transfer admittance RDS (on) |yfs| — 5 0.5 8.5 0.67 — Ω S ID = 3.5 A, VGS = 4 V Note 4 ID = 3.5 A, VDS = 10 V Input capacitance Output capacitance Ciss Coss — — 570 60 — — pF pF Reverse transfer capacitance Turn-on delay time Crss td (on) — — 12 13 — — pF ns VDS = 25 V VGS = 0 f = 1 MHz Rise time Turn-off delay time tr td (off) — — 18 70 — — ns ns Fall time Total gate charge tf Qg — — 8 21 — — ns nC Gate to source charge Gate to drain charge Qgs Qgd — — 2 6 — — nC nC Body-drain diode forward voltage Body-drain diode reverse recovery time VDF trr — — 0.85 120 1.30 — V ns Body-drain diode reverse recovery charge Note: 4. Pulse test Qrr — 0.48 — µC Gate to source leak current Zero gate voltage drain current Rev.2.00 Sep 07, 2005 page 2 of 7 Note 4 ID = 3.5 A VGS = 10 V RL = 35.7 Ω Rg = 10 Ω VDD = 200 V VGS = 10 V ID = 7 A IF = 7 A, VGS = 0 IF = 7 A, VGS = 0 diF/dt = 100 A/µs H5N2504DL, H5N2504DS Main Characteristics Maximum Safe Operation Area 100 40 ID (A) 30 30 Drain Current Channel Dissipation Pch (W) Power vs. Temperature Derating 20 10 0 0 50 100 150 Case Temperature 200 µs Tc (°C) 100 Drain to Source Voltage 300 1000 VDS (V) Typical Transfer Characteristics 10 6V 4V 3.5 V 3V 6 4 2 VGS = 2.5 V 8 ID (A) 8 VDS = 10 V Pulse Test Pulse Test 6 Drain Current 10 V 8V ID (A) s 0.1 this area is limited by RDS(on) 0.03 Ta = 25°C 0.01 1 3 10 30 10 Drain Current 10 m =1 10 0 0m DC µs 3 s (1s Op h er ot) at ion 1 (T c= 25 0.3 °C ) Operation in Typical Output Characteristics 4 –25°C 0 0 4 8 12 Drain to Source Voltage 16 20 Pulse Test 4 3 ID = 5 A 1A 0 4 8 12 Gate to Source Voltage Rev.2.00 Sep 07, 2005 page 3 of 7 16 3 4 5 VGS (V) Pulse Test 1 VGS = 4 V 10 V 0.2 2A 0 2 2 0.5 2 1 1 Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS(on) (Ω) 5 0 Gate to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 25°C Tc = 75°C 2 0 Drain to Source Saturation Voltage VDS(on) (V) 1 PW 10 20 VGS (V) 0.1 0.2 0.5 1 2 Drain Current 5 10 ID (A) 20 H5N2504DL, H5N2504DS Forward Transfer Admittance vs. Drain Current 2.0 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (Ω) Static Drain to Source on State Resistance vs. Temperature Pulse Test VGS = 4 V 1.6 1.2 ID = 5 A 0.8 2A 1A 0.4 0 –40 0 40 80 120 Case Temperature 160 100 50 20 10 Tc = –25°C 5 25°C 2 1 75°C 0.5 0.2 0.02 0.05 0.1 0.2 50 20 1000 Ciss 500 200 100 50 Coss 20 Crss 5 0.5 1 2 5 Reverse Drain Current 10 20 0 20 12 VDS 8 100 4 VDD = 200 V 100 V 50 V 8 16 Gate Charge Rev.2.00 Sep 07, 2005 page 4 of 7 24 0 32 Qg (nC) 80 100 VDS (V) 40 1000 Switching Time t (ns) 16 VDD = 50 V 100 V 200 V VGS (V) 400 Gate to Source Voltage VDS (V) Drain to Source Voltage ID = 7 A VGS 60 Switching Characteristics 20 500 40 Drain to Source Voltage IDR (A) Dynamic Input Characteristics 0 0 10 VGS = 0 f = 1 MHz 10 10 0.2 5 ID (A) 2000 100 200 2 5000 di / dt = 100 A / µs VGS = 0, Ta = 25°C 200 300 1 Typical Capacitance vs. Drain to Source Voltage Capacitance C (pF) Reverse Recovery Time trr (ns) 500 0.5 Drain Current Tc (°C) Body-Drain Diode Reverse Recovery Time 1000 VDS = 10 V Pulse Test VGS = 10 V, VDD = 125 V PW = 10 µs, duty ≤ 1 % RG = 10 Ω td(off) 100 td(on) 10 tf tr 1 0.2 0.5 1 2 Drain Current 5 10 ID (A) 20 H5N2504DL, H5N2504DS Reverse Drain Current IDR (A) 10 Pulse Test 8 6 4 VGS = 0 V 5, 10 V 2 0 0 0.4 0.8 1.2 1.6 Source to Drain Voltage Gate to Source Cutoff Voltage vs. Case Temperature Gate to Source Cutoff Voltage VGS(off) (V) Reverse Drain Current vs. Source to Drain Voltage 2.0 5 VDS = 10 V 4 3 ID = 10 mA 1 mA 2 1 0.1 mA 0 –50 VSD (V) 0 50 100 150 Case Temperature 200 Tc (°C) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 1 Tc = 25°C D=1 0.5 0.3 0.2 0.1 θch – c (t) = γ s (t) • θch – c θch – c = 4.17°C/W, Tc = 25°C 0.1 0.05 0.03 PDM 0.02 D= 0.01 ulse ot p h s 1 0.01 10 µ PW T PW T 100 µ 1m 10 m Pulse Width 100 m 1 PW (S) Switching Time Test Circuit Vin Monitor 10 Waveform 90% Vout Monitor D.U.T. Vin 10% RL Vout 10 Ω Vin 10 V VDD = 125 V 10% 90% td(on) Rev.2.00 Sep 07, 2005 page 5 of 7 10% tr 90% td(off) tf H5N2504DL, H5N2504DS Package Dimensions RENESAS Code Package Name MASS[Typ.] PRSS0004ZD-B DPAK(L)-(2) / DPAK(L)-(2)V 0.42g Unit: mm 1.7 ± 0.5 JEITA Package Code 2.3 ± 0.2 0.55 ± 0.1 1.2 ± 0.3 16.2 ± 0.5 3.1 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 (0.7) 4.7 ± 0.5 5.5 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 0.55 ± 0.1 0.55 ± 0.1 2.29 ± 0.5 2.29 ± 0.5 RENESAS Code Package Name MASS[Typ.] SC-63 PRSS0004ZD-C DPAK(S) / DPAK(S)V 0.28g 6.5 ± 0.5 5.4 ± 0.5 (0.1) Unit: mm 2.3 ± 0.2 0.55 ± 0.1 0 – 0.25 2.5 ± 0.5 (1.2) 1.0 Max. 2.29 ± 0.5 Rev.2.00 Sep 07, 2005 page 6 of 7 (5.1) (5.1) (0.1) 1.2 Max 5.5 ± 0.5 1.5 ± 0.5 JEITA Package Code 0.8 ± 0.1 2.29 ± 0.5 0.55 ± 0.1 H5N2504DL, H5N2504DS Ordering Information Part Name H5N2504DL-E H5N2504DSTL-E Quantity 3200 pcs 3000 pcs Shipping Container Box (Sack) Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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