ETC H5N2508DL

H5N2508DL, H5N2508DS
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1377 (Z)
1st. Edition
Mar. 2001
Features
•
•
•
•
•
Low on-resistance: R DS(on) = 0.48 typ.
Low leakage current: IDSS = 1 µA max (at VDS = 250 V)
High speed switching: tf = 11 ns typ (at VGS = 10 V, VDD = 125 V, ID = 3.5 A)
Low gate charge: Qg = 13 nC typ (at VDD = 200 V, VGS = 10 V, ID = 7 A)
Avalanche ratings
Outline
DPAK-2
4
4
D
1 2
3
G
H5N2508DS
S
1 2
3
H5N2508DL
1. Gate
2. Drain
3. Source
4. Drain
H5N2508DL, H5N2508DS
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
250
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
7
A
28
A
7
A
28
A
7
A
30
W
Note1
Drain peak current
ID
Body-drain diode reverse drain
current
I DR
Body-drain diode reverse drain peak
current
I DR
Avalanche current
I AP
(pulse)
Note1
(pulse)
Note3
Note2
Channel dissipation
Pch
Channel to case Thermal Impedance
θ ch-c
4.17
°C/W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. Tch 150°C
2
H5N2508DL, H5N2508DS
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
250
—
—
V
I D = 10 mA, VGS = 0
Gate to source leak current
I GSS
—
—
±0.1
µA
VGS = ±30 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
1
µA
VDS = 250 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
3.0
—
4.5
V
VDS = 10 V, ID = 1 mA
Static drain to source on state
resistance
RDS(on)
—
0.48
0.63
Forward transfer admittance
|yfs|
3.0
5.0
—
S
I D = 3.5 A, VDS = 10 V Note4
Input capacitance
Ciss
—
450
—
pF
VDS = 25 V
Output capacitance
Coss
—
60
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
12
—
pF
f = 1 MHz
Turn-on delay time
td(on)
—
19
—
ns
VDD = 125 V, ID = 3.5 A
Rise time
tr
—
14
—
ns
VGS = 10 V
Turn-off delay time
td(off)
—
47
—
ns
RL = 35.7
Fall time
tf
—
11
—
ns
Rg = 10
Total gate charge
Qg
—
13
—
nC
VDD = 200 V
Gate to source charge
Qgs
—
2.5
—
nC
VGS = 10 V
Gate to drain charge
Qgd
—
6
—
nC
ID = 7 A
Body-drain diode forward
voltage
VDF
—
0.9
1.4
V
I F = 7 A, VGS = 0
Body-drain diode reverse
recovery time
trr
—
100
—
ns
I F = 7 A, VGS = 0
Body-drain diode reverse
recovery charge
Qrr
—
0.38
—
µC
diF/dt = 100 A/µs
Note:
I D = 3.5 A, VGS = 10 V Note4
4. Pulse test
3
H5N2508DL, H5N2508DS
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
100
ID (A)
30
30
10
µs
1
1 m 00
=
µs
DC
10 s
ms
Op
er
(1
at
sh
ion
ot)
(T
PW
10
3
Drain Current
Channel Dissipation
Pch (W)
40
20
10
1
c=
0.3
Operation in
0.1 this area is
limited by RDS(on)
50
100
Case Temperature
150
Tc (°C)
200
1
Typical Output Characteristics
Typical Transfer Characteristics
V DS = 10 V
8V
8
4
2
0
5.5 V
VGS = 5 V
4
8
12
16
20
Drain to Source Voltage VDS (V)
Drain current
6
ID (A)
8
6V
30
3
10
100 300 1000
Drain to Source Voltage VDS (V)
10
Pulse Test
10 V
ID (A)
)
Ta = 25°C
0.01
10
Drain Current
°C
0.03
0
4
25
Pulse Test
6
4
25°C
Tc = 75°C
2
0
–25°C
2
4
6
Gate to Source Voltage
8
10
VGS (V)
Drain to Source Saturation Voltage
VDS(on) (V)
10
8
6
ID=7A
4
2
3A
1A
0
Static Drain to Source on State Resistance
RDS(on) (Ω)
Pulse Test
12
4
8
Gate to Source Voltage
16
20
VGS (V)
Static Drain to Source on State Resistance
vs. Temperature
2.0
Pulse Test
1.6 V GS = 10 V
1.2
ID=7A
0.8
0.4
0
–40
3A
1A
0
40
80
120
Case Temperature Tc (°C)
160
Static Drain to Source on State Resistance
vs. Drain Current
2
Pulse Test
1
0.5
V GS = 10 V
0.2
0.1
0.2
0.5
1
2
5
Drain Current
10
20
ID (A)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source on State Resistance RDS(on) (Ω)
H5N2508DL, H5N2508DS
100
50
V DS = 10 V
Pulse Test
20
10
5
Tc = –25°C
2
25°C
1
0.5
75°C
0.2
0.02 0.05 0.1 0.2
0.5 1
Drain Current
2
5
10
ID (A)
5
H5N2508DL, H5N2508DS
Typical Capacitance vs.
Drain to Source Voltage
Body-Drain Diode Reverse
Recovery Time
500
2000
Capacitance C (pF)
5000
Reverse Recovery Time trr (ns)
1000
200
100
50
di / dt = 100 A / µs
V GS = 0, Ta = 25°C
20
10
0.2
100
50
Coss
20
Crss
0
12
VDS
8
100
4
V DD = 200 V
100 V
50 V
4
8
12
16
Qg (nc)
0
20
Switching Time t (ns)
V DD = 50 V
100 V
200 V
16
VGS (V)
VGS
400
20
40
60
Drain to Source Voltage
80
100
VDS (V)
Switching Characteristics
1000
Gate to Source Voltage
VDS (V)
Drain to Source Voltage
20
Gate Charge
6
200
5
I D= 7 A
0
Ciss
500
10
Dynamic Input Characteristics
200
1000
0.5
1
2
5
10
20
Reverse Drain Current IDR (A)
500
300
VGS = 0
f = 1 MHz
V GS = 10 V, V DD = 125 V
PW = 10 µs, duty < 1 %
R G =10Ω
100
t d(off)
t d(on)
10
1
0.2
tf
tr
0.5
1
2
Drain Current
5
10
ID (A)
20
H5N2508DL, H5N2508DS
Gate to Source Cutoff Voltage
vs. Case Temperature
Reverse Drain Current vs.
Source to Drain Voltage
5
Gate to Source Cutoff Voltage
VGS(off) (V)
Reverse Drain Current
IDR (A)
10
8
6
4
2
V GS = 0 V
10 V
5V
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
V DS = 10 V
I D = 10mA
4
1mA
3
0.1mA
2
1
0
-50
VSD (V)
0
50
100
150
Case Temperature Tc (°C)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
200
90%
D.U.T.
RL
Vin
10Ω
Vin
10 V
V DD
= 125 V
Vout
10%
10%
90%
td(on)
tr
10%
90%
td(off)
tf
7
H5N2508DL, H5N2508DS
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.05
0.03
0.02
0.01
ulse
ot p
h
s
1
0.01
10 µ
8
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 4.17°C/W, Tc = 25°C
0.1
100 µ
PDM
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10
H5N2508DL, H5N2508DS
Package Dimensions
As of January, 2001
1.7 ± 0.5
Unit: mm
2.3 ± 0.2
0.55 ± 0.1
4.7 ± 0.5
1.2 ± 0.3
16.2 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
(0.7)
3.1 ± 0.5
5.5 ± 0.5
6.5 ± 0.5
5.4 ± 0.5
0.55 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
DPAK (L)-(2)
—
—
0.42 g
9
H5N2508DL, H5N2508DS
As of January, 2001
2.3 ± 0.2
0.55 ± 0.1
(4.9)
(5.3)
6.5 ± 0.5
5.4 ± 0.5
1.2 Max
5.5 ± 0.5
1.7 ± 0.5
Unit: mm
0 – 0.25
2.5 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
2.29 ± 0.5
0.55 ± 0.1
2.29 ± 0.5
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
10
DPAK (S)-(1),(2)
—
Conforms
0.28 g
H5N2508DL, H5N2508DS
As of January, 2001
(0.1)
2.3 ± 0.2
0.55 ± 0.1
(5.1)
(5.1)
(0.1)
6.5 ± 0.5
5.4 ± 0.5
1.2 Max
5.5 ± 0.5
1.5 ± 0.5
Unit: mm
0 – 0.25
2.5 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
2.29 ± 0.5
0.55 ± 0.1
2.29 ± 0.5
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
DPAK (S)-(3)
—
Conforms
0.28 g
11
H5N2508DL, H5N2508DS
Cautions
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contact Hitachi’s sales office before using the product in an application that demands especially high
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traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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Colophon 2.0
12