HITACHI HAT2050T

HAT2050T
Silicon N Channel Power MOS FET
High Speed Power Switching
ADE-208-660A (Z)
2nd. Edition
February 1999
Features
•
•
•
•
Low on-resistance
Capable of 4 V gate drive
Low drive current
High density mounting
Outline
TSSOP–8
87
8
D
1
D
4
G
65
12
34
5
G
S S
2 3
MOS1
S S
6 7
MOS2
1, 8
Drain
2, 3, 6, 7 Source
4, 5
Gate
HAT2050T
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
100
V
Gate to source voltage
VGSS
± 20
V
Drain current
ID
1
A
4
A
Drain peak current
I D(pulse)
Body-drain diode reverse drain current
I DR
Note1
1
A
Pch
Note2
1.0
W
Channel dissipation
Pch
Note3
1.5
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
– 55 to + 150
°C
Channel dissipation
Note:
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS
100
—
—
V
I D = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS
± 20
—
—
V
I G = ± 100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
± 10
µA
VGS = ± 16 V, VDS = 0
Zero gate voltege drain current
I DSS
—
—
1
µA
VDS = 100 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.3
—
2.3
V
VDS = 10 V, I D = 1 mA
Static drain to source on state
RDS(on)
—
0.56
0.75
Ω
I D = 0.5 A, VGS = 10 V Note4
resistance
RDS(on)
—
0.72
1.0
Ω
I D = 0.5 A, VGS = 4 V Note4
Forward transfer admittance
|yfs|
0.7
1.1
—
S
I D = 0.5 A, VDS = 10 V Note4
Input capacitance
Ciss
—
90
—
pF
VDS = 10 V
Output capacitance
Coss
—
42
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
20
—
pF
f = 1MHz
Turn-on delay time
t d(on)
—
11
—
ns
VGS = 4 V, ID = 0.5 A
Rise time
tr
—
24
—
ns
VDD ≅ 10 V
Turn-off delay time
t d(off)
—
14
—
ns
Fall time
tf
—
11
—
ns
Body–drain diode forward voltage
VDF
—
0.84
1.1
V
I F = 1 A, VGS = 0 Note4
Body–drain diode reverse
recovery time
t rr
—
85
—
ns
I F = 1 A, VGS = 0
diF/ dt = 20 A/µs
Note:
2
4. Pulse test
HAT2050T
Main Characteristics
10
ive
Dr
1.0
Op
er
ion
ive
at
0
Dr
er
0.5
Op
1
50
at
ion
100
150
Ambient Temperature
200
Maximum Safe Operation Area
10 µs
10
0
3
I D (A)
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Drain Current
1.5
Power vs. Temperature Derating
2
Channel Dissipation
Pch (W)
2.0
1
DC
er
0.3
0.1
0.03
Op
PW
ati
on
1
=
s
10
m
s
(P
W
Operation in
this area is
limited by R DS(on)
µs
m
<
No
10 te5
s)
0.01
Ta = 25°C
0.003 1 shot Pulse
1 Drive Operation
0.001
3
1
10
0.2
Drain to Source Voltage
Ta (°C)
30
100 200
V DS (V)
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
5
Typical Output Characteristics
5
8V
5V
3
6V
4.0 V
2
3.0 V
1
(A)
10V
4
ID
4
3
Drain Current
Drain Current
I D (A)
Pulse Test
Typical Transfer Characteristics
–25°C
Tc = 75°C
25°C
2
1
V DS = 10 V
Pulse Test
VGS = 2.5 V
0
2
4
6
Drain to Source Voltage
8
10
V DS (V)
0
2
4
6
Gate to Source Voltage
10
8
V GS (V)
3
HAT2050T
1.6
ID=2A
1.2
0.8
1A
0.4
0.5 A
0
Static Drain to Source on State Resistance
R DS(on) (Ω )
Pulse Test
2
4
6
Gate to Source Voltage
10
ID = 2 A
1.6
1, 0.5 A
1.2
2A
0.8
1, 0.5 A
0.4
0
–40
4V
VGS = 2.5 V
0
40
20
Pulse Test
10
5
2
4V
1
Pulse Test
80
120
Tc
(°C)
160
VGS = 10 V
0.5
0.2
0.2
V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
2.0
Case Temperature
4
8
0.5
1
2
Drain Current
Forward Transfer Admittance |y fs | (S)
Drain to Source Saturation Voltage
V DS(on) (V)
2.0
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source On State Resistance
R DS(on) ( Ω )
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
5
2
5
10
20
I D (A)
Forward Transfer Admittance vs.
Drain Current
Tc = –25 °C
1
0.5
75 °C
25 °C
0.2
0.1
0.05
0.02
V DS = 10 V
Pulse Test
0.05 0.1
0.2
0.5
Drain Current I D (A)
1
2
HAT2050T
Body–Drain Diode Reverse
Recovery Time
1000
200
Capacitance C (pF)
Reverse Recovery Time trr (ns)
500
100
50
20
10
5
0.1
100
Ciss
30
Coss
10
1
0
0.2
0.5
1
2
5
10
Reverse Drain Current I DR (A)
10
0
4
V DD = 20 V
10 V
5V
0.8
1.6
2.4
3.2
Gate Charge Qg (nc)
2
0
4.0
50
Switching Time t (ns)
6
V GS (V)
V GS
100
Gate to Source Voltage
V DS (V)
Drain to Source Voltage
20
8
V DS
20
30
40
50
Switching Characteristics
I D= 1 A
30
10
Drain to Source Voltage V DS (V)
10
V DD = 5 V
10 V
20 V
Crss
3
Dynamic Input Characteristics
40
VGS = 0
f = 1 MHz
300
di/dt = 20 A/µs
V GS = 0, Ta = 25°C
50
Typical Capacitance vs.
Drain to Source Voltage
20
10
V GS = 4 V, V DD = 10 V
PW = 5 µs, duty < 1 %
t d(off)
t d(on)
tf
tr
5
2
1
0.01 0.02
0.05 0.1
Drain Current
0.2
0.5
1
I D (A)
5
HAT2050T
Reverse Drain Current vs.
Souece to Drain Voltage
5
Reverse Drain Current I DR (A)
Pulse Test
4
3
2
5V
V GS = 0
1
0
0.4
0.8
1.2
1.6
Source to Drain Voltage
2.0
V SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
γ s (t)
Normalized Transient Thermal Impedance
10
D=1
0.5
1
0.2
0.1
0.1
0.05
0.02
0.01
0.01
θ ch – f(t) = γ s (t) • θ ch – f
θ ch – f = 166 °C/W, Ta = 25 °C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
e
uls
p
ot
h
1s
PDM
0.001
D=
PW
T
PW
T
0.0001
10 µ
100 µ
1m
10 m
100 m
1
Pulse Width PW (S)
6
10
100
1000
10000
HAT2050T
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
γ s (t)
Normalized Transient Thermal Impedance
10
D=1
0.5
1
0.2
0.1
0.1
0.05
0.02
0.01
θ ch – f(t) = γ s (t) • θ ch – f
θ ch – f = 210 °C/W, Ta = 25 °C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
0.01
lse
t
ho
pu
1s
0.001
PDM
D=
PW
T
PW
T
0.0001
10 µ
100 µ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
4V
50Ω
V DD
= 10 V
Vout
10%
10%
90%
td(on)
tr
10%
90%
td(off)
tf
7
HAT2050T
Package Dimensions
Unit: mm
1
4
0.65
0.10
0.22
+0.08
–0.07
0.13 M
0.17 ± 0.05
6.40 ± 0.20
0.07 +0.03
–0.04
5
1.10 Max
8
4.40 ± 0.1
3.00 ± 0.1
0–8°
0.50 ± 0.10
Hitachi Code
EIAJ Code
JEDEC Code
8
TTP–8D
—
—
Cautions
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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