HF220-50 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The HF220-50 is a 50 V epitaxial silicon NPN transistor, designed for SSB communications. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° L A • PG = 13 dB Typical at 220 W/30 MHz • IMD3 = -30 dBc Max. at 220 W (PEP) • Omnigold™ Metalization System • 50 V operation C E FULL R C B B E H E D G F I J MAXIMUM RATINGS 12 A IC 110 V VCBO VCEO 55 V VEBO 4.0 V MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 PDISS 320 W @ TC = 25 C TJ -65 C to +200 C O O O C .245 / 6.22 .255 / 6.48 D .720 / 18.28 .7.30 / 18.54 .125 / 3.18 -65 C to +150 C θJC 0.7 C/W .970 / 24.64 .980 / 24.89 G .495 / 12.57 .505 / 12.83 H .003 / 0.08 .007 / 0.18 I .090 / 2.29 .110 / 2.79 J .150 / 3.81 .175 / 4.45 .980 / 24.89 1.050 / 26.67 .280 / 7.11 L ORDER CODE: ASI10614 O O TC = 25 C NONETEST CONDITIONS SYMBOL F K O TSTG MAXIMUM .125 / 3.18 B O K DIM E CHARACTERISTICS Ø.125 NOM. MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 200 mA 110 V BVCEO IC = 200 mA 55 V BVEBO IE = 20 mA 4.0 V ICEO VCE = 30 V 5 mA ICES VCE = 55 V 10 mA hFE VCE = 6 V 80 --- Cob VCB = 50 V 390 pF -30 dB dBc % GP IMD3 ηC IC = 10 A 15 f = 1.0 MHz 13 VCE = 50 V ICQ =150 mA f1 = 30.000 MHz POUT = 220 W (PEP) f2 = 30.001 MHz 40 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/2 ERROR! REFERENCE SOURCEHF220-50 NOT FOUND. A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 2/2