INTERSIL HGTG32N60E2

HGTG32N60E2
32A, 600V N-Channel IGBT
April 1995
Features
Package
• 32A, 600V
JEDEC STYLE TO-247
• Latch Free Operation
• Typical Fall Time - 600ns
EMITTER
COLLECTOR
GATE
COLLECTOR
(BOTTOM SIDE
METAL)
• High Input Impedance
• Low Conduction Loss
Description
The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The
device has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between +25oC
and +150oC.
Terminal Diagram
IGBTs are ideal for many high voltage switching applications
operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and
drivers for solenoids, relays and contactors.
N-CHANNEL ENHANCEMENT MODE
This device incorporates generation two design techniques
which yield improved peak current capability and larger short circuit withstand capability than previous designs.
PACKAGING AVAILABILITY
PART NUMBER
HGTG32N60E2
PACKAGE
TO-247
C
G
E
BRAND
G32N60E2
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings
TC = +25oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR
Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
at VGE = 15V, at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2)at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
NOTES:
HGTG32N60E2
600
600
50
32
200
±20
±30
200A at 0.8 BVCES
208
1.67
-55 to +150
260
3
15
UNITS
V
V
A
A
A
V
V
W
W/oC
oC
oC
µs
µs
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PEAK) = 360V, TC = +125oC, RGE = 25Ω.
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,567,641
4,587,713
4,598,461
4,605,948
4,618,872
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-120
File Number
2828.3
Specifications HGTG32N60E2
Electrical Specifications
TC = +25oC, Unless Otherwise Specified
LIMITS
PARAMETERS
SYMBOL
Collector-Emitter Breakdown Voltage
BVCES
Collector-Emitter Leakage Voltage
ICES
Collector-Emitter Saturation Voltage
VCE(SAT)
Gate-Emitter Threshold Voltage
TEST CONDITIONS
IC = 250µA, VGE = 0V
MIN
TYP
MAX
UNITS
600
-
-
V
VCE = BVCES
TC = +25oC
-
-
250
µA
VCE = 0.8 BVCES
TC = +125oC
-
-
4.0
mA
IC = IC90,
VGE = 15V
TC = +25oC
-
2.4
2.9
V
TC = +125oC
-
2.4
3.0
V
TC = +25oC
3.0
4.5
6.0
V
VGE(TH)
IC = 1mA,
VCE = VGE
Gate-Emitter Leakage Current
IGES
VGE = ±20V
-
-
±500
nA
Gate-Emitter Plateau Voltage
VGEP
IC = IC90, VCE = 0.5 BVCES
-
6.5
-
V
IC = IC90,
VCE = 0.5 BVCES
VGE = 15V
-
200
260
nC
VGE = 20V
-
265
345
nC
-
100
-
ns
-
150
-
ns
tD(OFF)I
-
630
820
ns
tFI
-
620
800
ns
Turn-Off Energy (Note 1)
WOFF
-
3.5
-
mJ
Thermal Resistance
RθJC
-
0.5
0.6
oC/W
On-State Gate Charge
QG(ON)
Current Turn-On Delay Time
tD(ON)I
Current Rise Time
tRI
Current Turn-Off Delay Time
Current Fall Time
L = 500µH, IC = IC90, RG = 25Ω,
VGE = 15V, TJ = +125oC,
VCE = 0.8 BVCES
NOTE:
1. Turn-Off Energy Loss (WOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A) The HGTG32N60E2 was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VCE = 15V
ICE, COLLECTOR-EMITTER CURRENT (A)
ICE, COLLECTOR-EMITTER CURRENT (A)
100
80
60
o
TC = +150 C
40
TC = +25oC
20
TC = -40oC
0
0
2
4
6
8
10
PULSE DURATION = 250µs DUTY CYCLE < 0.5%, TC = +25oC
100
VGE = 10V
VGE = 15V
90
80
VGE = 8.0V
70
60
VGE = 7.5V
50
40
VGE = 7.0V
30
VGE = 6.5V
20
VGE = 6.0V
10
VGE = 5.5V
0
0
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL)
2
4
6
8
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
10
FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL)
3-121
HGTG32N60E2
Typical Performance Curves (Continued)
1.0
50
VGE = 15V
VCE = 240V
0.8
tFI , FALL TIME (µs)
40
VGE = 10V
30
20
0.6
VCE = 480V
0.4
VGE = 10V AND 15V
TJ = +150oC, RG = 25Ω
L = 50µH
0.2
10
0
0.0
+25
+50
+75
+100
+125
+150
1
10
TC , CASE TEMPERATURE (oC)
FIGURE 3. MAXIMUM DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 4. FALL TIME vs COLLECTOR-EMITTER CURRENT
600
VCE, COLLECTOR-EMITTER VOLTAGE (V)
12000
f = 1MHz
C, CAPACITANCE (pF)
10000
8000
CISS
6000
4000
COSS
2000
CRSS
0
10
VCC = BVCES
450
5
10
15
20
5
300
0.75 BVCES 0.75 BVCES
0.50 BVCES 0.50 BVCES
0.25 BVCES 0.25 BVCES
150
IG(REF) = 2.75mA
VGE = 10V
COLLECTOR-EMITTER VOLTAGE
25
20
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 5. CAPACITANCE vs COLLECTOR-EMITTER VOLTAGE
VCC = BVCES
GATEEMITTER
VOLTAGE
0
0
IG(REF)
IG(ACT)
TIME (µs)
80
IG(REF)
0
IG(ACT)
FIGURE 6. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT. (REFER TO APPLICATION
NOTES AN7254 AND AN7260).
20
WOFF , TURN-OFF SWITCHING LOSS (mJ)
6
TJ = +150oC
VCE(ON), SATURATION VOLTAGE (V)
100
ICE, COLLECTOR-EMITTER CURRENT (A)
VGE, GATE-EMITTER VOLTAGE (V)
ICE, DC COLLECTOR CURRENT (A)
60
5
VGE = 10V
4
3
VGE = 15V
2
1
TJ = +150oC
RG = 25Ω
L = 50µH
10
VCE = 480V, VGE = 10V, 15V
1.0
VCE = 240V, VGE = 10V, 15V
0.1
0
1
10
100
ICE, COLLECTOR-EMITTER CURRENT (A)
1
10
100
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 7. SATURATION VOLTAGE vs COLLECTOR-EMITTER
CURRENT
3-122
FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOREMITTER CURRENT
HGTG32N60E2
Typical Performance Curves (Continued)
100
1.5
VCE = 240V
fOP , OPERATING FREQUENCY (kHz)
VGE = 15V, RG = 50Ω
tD(OFF)I , TURN-OFF DELAY (µs)
VGE = 10V, RG = 50Ω
1.0
VGE = 15V, RG = 25Ω
0.5
VGE = 10V, RG = 25Ω
TJ = +150oC
VCE = 480V
L = 50µH
fMAX1 = 0.05/tD(OFF)I
fMAX2 = (PD - PC)/WOFF
PC = DUTY FACTOR = 50%
RθJC = 0.5oC/W
10
VCE = 480V
TJ = +150oC, VGE = 15V
RG = 25Ω, L = 50µH
1
1
0.0
1
10
100
10
100
ICE, COLLECTOR-EMITTER CURRENT (A)
PD = ALLOWABLE DISSIPATION
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 9. TURN-OFF DELAY vs COLLECTOR-EMITTER
CURRENT
PC = CONDUCTION DISSIPATION
FIGURE 10. OPERATING FREQUENCY vs COLLECTOREMITTER CURRENT AND VOLTAGE
Operating Frequency Information
Operating frequency information for a typical device (Figure
10) is presented as a guide for estimating device performance
for a specific application. Other typical frequency vs collector
current (ICE) plots are possible using the information shown
for a typical unit in Figures 7, 8 and 9. The operating
frequency plot (Figure 10) of a typical device shows fMAX1 or
fMAX2 whichever is smaller at each point. The information is
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
fMAX1 is defined by fMAX1 = 0.05/tD(OFF)I. tD(OFF)I deadtime
(the denominator) has been arbitrarily held to 10% of the onstate time for a 50% duty factor. Other definitions are
possible. tD(OFF)I is defined as the time between the 90%
point of the trailing edge of the input pulse and the point
where the collector current falls to 90% of its maximum
value. Device turn-off delay can establish an additional
frequency limiting condition for an application other than
TJMAX. tD(OFF)I is important when controlling output ripple
under a lightly loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/WOFF. The allowable dissipation (PD) is defined by PD = (TJMAX - TC)/RθJC. The sum of
device switching and conduction losses must not exceed PD.
A 50% duty factor was used (Figure 10) so that the conduction
losses (PC) can be approximated by PC = (VCE x ICE)/2. WOFF
is defined as the sum of the instantaneous power loss starting
at the trailing edge of the input pulse and ending at the point
where the collector current equals zero (ICE - 0A).
The switching power loss (Figure 10) is defined as f MAX1 x
WOFF . Turn on switching losses are not included because
they can be greatly influenced by external circuit conditions
and components.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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