HITTITE HMC591LP5_09

HMC591LP5 / 591LP5E
v02.0107
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
11
Typical Applications
Features
The HMC591LP5 / HMC591LP5E is ideal for use as a
power amplifier for:
Saturated Output Power: +33 dBm @ 20% PAE
• Point-to-Point Radios
Gain: 18 dB
• Point-to-Multi-Point Radios
DC Supply: +7.V @ 1340 mA
• Test Equipment & Sensors
50 Ohm Matched Input/Output
• Military End-Use
QFN Leadless SMT Packages, 25 mm2
Output IP3: +41 dBm
LINEAR & POWER AMPLIFIERS - SMT
• Space
Functional Diagram
General Description
The HMC591LP5 & HMC591LP5E are high dynamic
range GaAs PHEMT MMIC 2 Watt Power Amplifiers
which operate from 6 to 9.5 GHz. The amplifier
provides 18 dB of gain, +33 dBm of saturated power,
and 19% PAE from a +7V supply. This 50 Ohm matched amplifier does not require any external
components and the RF I/Os are DC blocked for
robust operation. For applications which require
optimum OIP3, Idd should be set for 940 mA, to
yield +41 dBm OIP3. For applications which require
optimum output P1dB, Idd should be set for 1340 mA,
to yield +33 dBm Output P1dB.
Electrical Specifi cations, TA = +25° C, Vdd = +7V, Idd = 1340 mA[1]
Parameter
Min.
Frequency Range
Typ.
Max.
Min.
6-8
Gain
16
Max.
18
dB
dB/ °C
Input Return Loss
14
12
dB
Output Return Loss
12
10
dB
33
dBm
33
dBm
41
41
dBm
1340
1340
mA
30
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
32
32.5
[2]
Supply Current (Idd)
30
[1] Adjust Vgg between -2 to 0V to achieve Idd= 1340 mA typical.
[2] Measurement taken at 7V @ 940mA, Pin/Tone = -15 dBm
11 - 302
GHz
0.05
Output Power for 1 dB
Compression (P1dB)
15
Units
0.05
Gain Variation Over Temperature
19
Typ.
6 - 9.5
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC591LP5 / 591LP5E
v02.0107
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Gain vs. Temperature
25
28
15
24
-5
-15
20
+25C
+85C
-40C
12
-25
8
4
5
6
7
8
9
10
11
12
6
6.5
7
FREQUENCY (GHz)
0
-5
-5
RETURN LOSS (dB)
RETURN LOSS (dB)
8
8.5
9
9.5
10
Output Return Loss vs. Temperature
0
-10
-15
+25C
+85C
-40C
-20
7.5
FREQUENCY (GHz)
Input Return Loss vs. Temperature
-10
-15
+25C
+85C
-40C
-20
-25
-25
4
5
6
7
8
9
10
11
12
4
5
6
FREQUENCY (GHz)
8
9
10
11
12
9
9.5
10
Psat vs. Temperature
36
34
34
Psat (dBm)
36
32
+25C
+85C
-40C
30
7
FREQUENCY (GHz)
P1dB vs. Temperature
P1dB (dBm)
11
16
28
LINEAR & POWER AMPLIFIERS - SMT
S21
S11
S22
5
GAIN (dB)
RESPONSE (dB)
Broadband Gain & Return Loss
32
+25C
+85C
-40C
30
28
26
26
6
6.5
7
7.5
8
8.5
FREQUENCY (GHz)
9
9.5
10
6
6.5
7
7.5
8
8.5
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 303
HMC591LP5 / 591LP5E
v02.0107
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Psat vs. Current
36
34
34
Psat (dBm)
36
32
30
940 mA
1140 mA
1340 mA
28
32
940 mA
1140 mA
1340 mA
30
28
26
26
6
6.5
7
7.5
8
8.5
9
9.5
10
6
6.5
7
FREQUENCY (GHz)
7.5
8
8.5
9
10
14
18
Power Compression @ 8 GHz,
7V @ 1340 mA
35
Pout(dBm), GAIN (dB), PAE(%)
46
42
38
+25C
+85C
-40C
34
30
26
6
6.5
7
7.5
8
8.5
9
9.5
30
20
15
10
5
0
-14
10
Pout
Gain
PAE
25
-10
-6
FREQUENCY (GHz)
-2
2
6
10
INPUT POWER (dBm)
Output IM3, 7V @ 940 mA
Output IM3, 7V @ 1340 mA
100
100
90
80
6 GHz
7 GHz
8 GHz
9 GHz
10 GHz
80
70
60
40
IM3 (dBc)
IM3 (dBc)
9.5
FREQUENCY (GHz)
Output IP3 vs. Temperature
7V @ 940 mA, Pin/Tone = -15 dBm
IP3 (dBm)
LINEAR & POWER AMPLIFIERS - SMT
11
P1dB (dBm)
P1dB vs. Current
6 GHz
7 GHz
8 GHz
9 GHz
10 GHz
20
60
50
40
30
20
0
-20
-16
-12
-8
-4
Pin/Tone (dBm)
11 - 304
0
4
8
10
-20
-16
-12
-8
-4
0
Pin/Tone (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
4
8
HMC591LP5 / 591LP5E
v02.0107
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Gain & Power vs. Supply Current @ 8 GHz
Gain & Power vs. Supply Voltage @ 8 GHz
36
32
Gain
P1dB
Psat
28
24
20
16
940
1140
32
Gain
P1dB
Psat
28
11
24
20
16
6.5
1340
7
Idd SUPPLY CURRENT (mA)
Reverse Isolation
vs. Temperature, 7V @ 1340 mA
Power Dissipation
0
POWER DISSIPATION (W)
10
+25C
+85C
-40C
-20
ISOLATION (dB)
7.5
Vdd SUPPLY VOLTAGE (Vdc)
-40
-60
-80
6
7
8
9
10
9
8
6 GHz
7 GHz
8 GHz
9 GHz
10 GHz
7
6
-14
-10
FREQUENCY (GHz)
Absolute Maximum Ratings
-6
-2
2
6
10
Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd)
+8 Vdc
Vdd (V)
Idd (mA)
Gate Bias Voltage (Vgg)
-2.0 to 0 Vdc
+6.5
1350
RF Input Power (RFIN)(Vdd = +7.0 Vdc)
+15 dBm
+7.0
1340
Channel Temperature
175 °C
+7.5
1330
Continuous Pdiss (T= 75 °C)
(derate 104.3 mW/°C above 75 °C)
10.43 W
Thermal Resistance
(channel to package bottom)
9.59 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
14
INPUT POWER (dBm)
LINEAR & POWER AMPLIFIERS - SMT
GAIN (dB), P1dB (dBm), Psat(dBm)
GAIN (dB), P1dB (dBm), Psat(dBm)
36
Note: Amplifi er will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 1340 mA at +7.0V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 305
HMC591LP5 / 591LP5E
v02.0107
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Outline Drawing
LINEAR & POWER AMPLIFIERS - SMT
11
11 - 306
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
HMC591LP5
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
HMC591LP5E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
Package Marking [3]
[1]
H591
XXXX
[2]
H591
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC591LP5 / 591LP5E
v02.0107
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Pad Descriptions
Function
Description
1, 2, 6 - 8,
10 - 12, 14, 15,
17 - 19, 23, 24,
26, 27, 29 - 31
N/C
Not connected.
3, 5, 20, 22
GND
Package bottom has an exposed metal paddle
that must be connected to RF/DC ground.
4
RFIN
This pad is AC coupled and
matched to 50 Ohms.
9
Vgg
Gate control for amplifier. Adjust to achieve Idd of 1340 mA.
Please follow “MMIC Amplifier Biasing Procedure”
Application Note. External bypass capacitors of
100 pF and 2.2 μF are required.
13, 16, 25, 28, 32
Vdd 1-5
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 2.2 μF are required.
21
RFOUT
This pad is AC coupled and
matched to 50 Ohms.
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
LINEAR & POWER AMPLIFIERS - SMT
Pad Number
11 - 307
HMC591LP5 / 591LP5E
v02.0107
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Application Circuit
Component
Value
C1 - C6
100pF
C7 - C12
2.2μF
LINEAR & POWER AMPLIFIERS - SMT
11
11 - 308
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC591LP5 / 591LP5E
v02.0107
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Evaluation PCB
List of Materials for Evaluation PCB 108190 [1]
Item
Description
J1 - J2
PCB Mount SMA Connector
J3 - J4
DC Pin
C1 - C6
100pF Capacitor, 0402 Pkg.
C7 - C12
2.2 μF Capacitor, 1206 Pkg
U1
HMC591LP5 / HMC591LP5E
PCB [2]
109001 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
The circuit board used in the final application
should use RF circuit design techniques. Signal
lines should have 50 ohm impedance while the
package ground leads and package bottom should
be connected directly to the ground plane similar to
that shown. A sufficient number of via holes should
be used to connect the top and bottom ground
planes. The evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit
board shown is available from Hittite upon request.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
11 - 309