Transistors SMD Type Digital Transistors HR1L2Q Features Up to 2A High Current Drives Such As IC Outputs and Actuators Available On-chip Bias Resistor Low Power Consumption During Drive Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -10 V Collector Current (DC) IC(DC) -1.0 A Collector Current (Pulse) IC(pulse) *1 -2.0 A Base Current (DC) IB(DC) -0.02 A Total Power Dissipation PT *2 2.0 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 *1 PW 10ms, Duty Cycle 50% *2 When 0.7mm x 16cm2 ceramic board is used. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Collector Cut-off Current ICBO VCB = -60V, IE = 0 VCE = -2.0V , IC = -0.1A 150 DC Current Gain hFE * VCE = -2.0V , IC = -0.5A 100 VCE = -2.0V , IC = -1.0A 50 Typ Max Unit -100 nA Low Level Output Voltage VOL * VIN = -5.0V, IC = -0.5A -0.55 V Low Level Input Voltage VIL * VCE = -5.0V, IC = -100 A -0.3 V Input Resistance R1 329 470 611 Emitter-Base Resistance R2 3.29 4.7 6.11 * PW k 350 s, Duty Cycle 2% www.kexin.com.cn 1 Transistors SMD Type HR1L2Q Marking Marking MT Equivalent Circuit Electrical Characteristics Curves 2 www.kexin.com.cn Transistors SMD Type HR1L2Q www.kexin.com.cn 3