PD - 93771 PROVISIONAL IRG4BAC50S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies (< 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry Super-220™ (TO-273AA) package VCES = 600V VCE(on) typ. = 1.28V G @VGE = 15V, IC = 41A E N-channel Benefits • Generation 4 IGBT offers highest efficiency • Optimized for specific application conditions Super-220™ (TO-273AA) Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Max. Units Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. 600 70 41 140 140 ± 20 20 200 78 -55 to + 150 V A V mJ W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθCS RθJA Wt www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. Max. ––– 0.50 ––– TBD 0.64 ––– 40 ––– Units °C/W g (oz) 1 1/19/2000 IRG4BAC50S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ VCE(ON) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 — Emitter-to-Collector Breakdown Voltage 18 — Temperature Coeff. of Breakdown Voltage — 0.75 — 1.28 Collector-to-Emitter Saturation Voltage — 1.62 — 1.28 Gate Threshold Voltage 3.0 — Temperature Coeff. of Threshold Voltage — -9.3 Forward Transconductance 17 34 — — Zero Gate Voltage Collector Current — — — — Gate-to-Emitter Leakage Current — — Max. Units Conditions — V VGE = 0V, IC = 250µA — V VGE = 0V, IC = 1.0A — V/°C VGE = 0V, IC = 1.0mA VGE = 15V 1.36 IC = 41A — IC = 80A See Fig.2, 5 V — IC = 41A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 250µA — S VCE = 100V, IC = 41A 250 VGE = 0V, VCE = 600V µA 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 1000 VGE = 0V, VCE = 600V, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LC LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Collector Inductance Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — — — — — — — — — — — Typ. 180 24 61 33 30 650 400 0.72 8.27 8.99 31 31 1080 620 15 2.0 5.0 4100 250 48 Max. Units Conditions 280 IC = 41A 37 nC VCC = 400V See Fig. 8 92 VGE = 15V — — TJ = 25°C ns 980 IC = 41A, VCC = 480V 600 VGE = 15V, RG = 5.0Ω — Energy losses include "tail" — mJ See Fig. 9, 10, 14 13 — TJ = 150°C, — IC = 41A, VCC = 480V ns — VGE = 15V, RG = 5.0Ω — Energy losses include "tail" — mJ See Fig. 11, 14 — nH Measured 5mm from package — — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. (See Fig. 13b) VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω, (See Fig. 13a) Pulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot. Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4BAC50S 100 F o r b o th : T ria n g u la r wa v e : D uty cy c le: 50% T J = 125° C T s ink = 90°C Ga te drive as s pec ified 80 I Load Current ( A ) P o w e r D i ss i p a tio n = 4 0 W C la m p v o lta g e : 8 0 % o f ra te d 60 S q u are wa ve: 6 0 % o f ra te d vo lt a g e 40 I 20 Id e a l di o de s A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 1000 1000 100 100 10 TJ = 150 o C TJ = 25 o C V GE = 15V 20µs PULSE WIDTH 1 0.1 1 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com 10 TJ = 150 o C 10 TJ = 25 oC V CC = 50V 5µs PULSE WIDTH 1 5 6 7 8 9 10 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4BAC50S L IM IT E D B Y P A C K A G E 2.2 V G E = 1 5V VCE , Collector-to-Emitter Voltage(V) Maxim um D C Collector C urrent (A ) 80 60 40 20 0 25 50 75 100 125 150 VGE = 15V 80 us PULSE WIDTH 2.0 I C = 82 A 1.8 1.6 1.4 I C = 41 A 1.2 I C =20.5 A 1.0 0.8 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) T C , C ase Tem perature (°C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 1 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 0.001 0.00001 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BAC50S 20 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc VGE , Gate-to-Emitter Voltage (V) C, Capacitance (pF) 8000 6000 Cies 4000 2000 Coes VCC = 400V I C = 41A 16 12 8 4 Cres 0 1 10 0 100 0 VCE , Collector-to-Emitter Voltage (V) Total Switching Losses (mJ) Total Switching Losses (mJ) 100 9.5 9.0 8.5 10 20 30 40 RRGG , Gate Gate Resistance Resistance(Ω) (Ohm) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 120 160 200 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage V CC = 480V V GE = 15V TJ = 25 ° C I C = 41A 0 80 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 10.0 40 50 5.0Ω RG = Ohm VGE = 15V VCC = 480V IC = 82 A IC = 41 A 10 IC = 20.5 A 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BAC50S RG TJ VCC VGE 1000 5.0Ω = Ohm = 150 ° C = 480V = 15V I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) 40 30 VGE = 20V T J = 125 oC 100 20 10 10 SAFE OPERATING AREA 1 0 0 20 40 60 80 I C , Collector-to-emitter Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 100 1 10 100 1000 VCE , Collector-to-Emitter Voltage (V) Fig. 12 - Turn-Off SOA www.irf.com IRG4BAC50S L D .U .T. VC * 50V RL = 0 - 480V 10 0 0V 480V 4 X I C@25°C 480µF 960V * Driver s am e ty pe a s D .U .T .; V c = 80 % of Vc e(m ax ) * Note: Due to the 5 0V pow e r supply, puls e w idth and inductor w ill incre as e to obta in rated Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L D river* D .U .T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V * Driver same type as D.U.T., VC = 480V Fig. 14b - Switching Loss Waveforms www.irf.com 7 IRG4BAC50S Super-220™ (TO-273AA) Package Outline WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 1/2000 8 www.irf.com