PD - 91687A IRG4PSH71K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for motorcontrol • Minimum switching losses combined with low conduction losses • Tightest parameter distribution • Creepage distance increased to 5.35mm VCES = 1200V VCE(on) typ. = 2.97V G @VGE = 15V, IC = 42A E n-channel Benefits • Highest current rating IGBT • Maximum power density, twice the power handling of the TO-247, less space than TO-264 SUPER - 247 Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tSC VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Max. Units Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current ➀ Clamped Inductive Load Current ➁ Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy ➂ Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds 1200 78 42 156 156 10 ± 20 170 350 140 -55 to + 150 V A µs V mJ W °C 300 (0.063 in. (1.6mm from case ) Thermal Resistance\ Mechanical Parameter RθJC RθCS RθJA www.irf.com Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Recommended Clip Force Weight Min. Typ. Max. ––– ––– ––– 20.0(2.0) ––– ––– 0.24 ––– ––– 6 (0.21) 0.36 ––– 38 ––– ––– Units °C/W N (kgf) g (oz) 1 5/11/99 IRG4PSH71K Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 1200 ––– Emitter-to-Collector Breakdown Voltage ➃ 18 ––– ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 1.1 ––– 2.97 VCE(ON) Collector-to-Emitter Saturation Voltage ––– 3.44 ––– 2.60 VGE(th) Gate Threshold Voltage 3.0 ––– ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -12 gfe Forward Transconductance ➄ 25 38 ––– ––– ICES Zero Gate Voltage Collector Current ––– ––– ––– ––– IGES Gate-to-Emitter Leakage Current ––– ––– V(BR)CES V(BR)ECS Max. Units Conditions ––– V VGE = 0V, IC = 250µA ––– V VGE = 0V, IC = 1.0A ––– V/°C VGE = 0V, IC = 10mA 3.9 IC = 42A VGE = 15V ––– IC = 78A See Fig.2, 5 V ––– IC = 42A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA ––– mV/°C VCE = VGE, IC = 1.5mA ––– S VCE = 50V, IC = 42A 500 VGE = 0V, VCE = 1200V µA 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 5.0 mA VGE = 0V, VCE = 1200V, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Q gc td(on) tr td(off) tf Eon Eoff Ets tsc Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time td(on) tr td(off) tf Ets LE Cies Coes Cres Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω, (See fig. 13a) Repetitive rating; pulse width limited by maximum junction temperature 2 Min. — — — — — — — — — — 10 Typ. 410 47 145 45 38 220 160 2.35 3.14 5.49 — — — — — — — — — — 42 41 460 250 11.5 13 5770 400 100 Max. Units Conditions 610 IC = 42A 70 nC VCC = 400V See Fig.8 220 VGE = 15V — — TJ = 25°C ns 340 IC = 42A, VCC = 960V 250 VGE = 15V, RG = 5.0Ω — Energy losses include "tail" — mJ See Fig. 9,10,14 8.3 — µs VCC = 720V, TJ = 125°C VGE = 20V, RG = 5.0Ω — TJ = 150°C — IC = 42A, VCC = 960V ns — VGE = 15V, RG = 5.0Ω — Energy losses include "tail" — mJ See Fig. 10,11,14 — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz Pulse width ≤ 80µs; duty factor ≤ 0.1% Pulse width 5.0µs, single shot www.irf.com IRG4PSH71K 80 For both: 60 L o ad C u rre n t (A ) Triangular wave: Duty cycle: 50% T J = 125°C T sink= 90°C Gate drive as specified Power Dissipation = 58W Clamp voltage: 80% of rated Square wave: 40 60% of rated voltage 20 Ideal diodes A 0 0.1 1 10 100 f, F req ue nc y (kH z ) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) 100 TJ = 150 °C TJ = 25 °C 10 C Ic , Collector-to-Emitter Current I , Collector Current (A) (A) 100 V GE = 15V 80µs PULSE WIDTH 1 1.0 2.0 3.0 4.0 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com I C , Collector-to-Emitter Current (A) 1000 1000 5.0 TJ = 150 °C 10 TJ = 25 °C V CC = 50V 5µs PULSE WIDTH 1 5 6 7 8 9 10 11 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4PSH71K 5.0 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) 80 60 40 20 0 25 50 75 100 125 VGE = 15V 80 us PULSE WIDTH 4.0 IC = 84 A 3.0 IC = 42 A IC = 21 A 2.0 -60 -40 -20 150 TC , Case Temperature ( °C) 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (ZthJC) 1 D = 0 .50 0.1 0 .20 PDM 0 .1 0 0.05 0.0 2 0.01 t 1 t2 SIN G L E PU L SE (T HE R M A L R ES PO N SE ) Notes: 1. Duty factor D = t 1 / t2 2. Peak TJ = PDM x Z thJC + TC 0.01 0.0001 0.001 0.01 0.1 1 10 A 100 t 1 , R e ctang ular Pulse D uratio n (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PSH71K VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc C, Capacitance (pF) 8000 Cies 6000 4000 2000 Coes VGE , Gate-to-Emitter Voltage (V) 20 10000 VCC = 400V I C = 42A 15 10 5 Cres 0 0 1 10 0 100 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 100 V CC = 960V V GE = 15V TJ = 25 °C I C = 42A 15 10 5 0 10 20 30 40 50 RG , Gate Resistance Ω Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 200 300 400 500 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mJ) Total Switching Losses (mJ) 20 100 QG , Total Gate Charge (nC) VCE , Collector-to-Emitter Voltage (V) RG = 5.0 Ω VGE = 15V VCC = 960V IC = 84 A IC = 42 A 10 IC = 21 A 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (° C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PSH71K RG TJ VCC VGE 1000 = 5.0 = 150 ° C = 960V = 15V I C , Collector Current (A) Total Switching Losses (mJ) 40 30 VGE = 20V T J = 125 oC 100 20 10 10 SAFE OPERATING AREA 1 0 20 30 40 50 60 70 80 I C , Collector Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 90 1 10 100 1000 10000 VCE , Collector-to-Emitter Voltage (V) Fig. 12 - Turn-Off SOA www.irf.com IRG4PSH71K L D .U .T. VC * 50V RL = 0 - 960V 1 00 0V 960V 4 X IC@25°C 480µF 960V * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L D river* D .U .T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V * Driver same type as D.U.T., VC = 960V 9 0% 1 0% VC 90 % Fig. 14b - Switching Loss t d (o ff) 10 % IC 5% Waveforms tf tr t d (o n ) t=5µ s E on E o ff E ts = ( Eo n +E o ff ) www.irf.com 7 IRG4PSH71K Case Outline and Dimensions — Super-247 Dimensions are shown in millimeters WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 5/99 8 www.irf.com