IRF IRHLNJ797034

PD-97302A
2N7624U3
IRHLNJ797034
60V, P-CHANNEL
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (SMD-0.5)
TECHNOLOGY
™
Product Summary
Part Number
IRHLNJ797034
Radiation Level
100K Rads (Si)
RDS(on)
0.072Ω
ID
22A*
IRHLNJ793034
300K Rads (Si)
0.072Ω
22A*
SMD-0.5
International Rectifier’s R7 TM Logic Level Power
MOSFETs provide simple solution to interfacing CMOS
and TTL control circuits to power devices in space and
other radiation environments. The threshold voltage
remains within acceptable operating limits over the
full operating temperature and post radiation. This is
achieved while maintaining single event gate rupture
and single event burnout immunity.
These devices are used in applications such as current
boost low signal source in PWM, voltage comparator
and operational amplifiers.
Features:
n
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @VGS = -4.5V,TC = 25°C
ID @VGS = -4.5V,TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
-22*
-14.9
-88
57
0.45
±10
79
-22
5.7
-12.3
-55 to 150
300 (for 5s)
1.0 (Typical)
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
* Current is limited by package
For footnotes refer to the last page
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1
10/05/10
IRHLNJ797034, 2N7624U3
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
Parameter
Min
Drain-to-Source Breakdown Voltage
-60
—
—
V
—
-0.055
—
V/°C
—
—
0.072
Ω
-1.0
—
16
—
—
—
3.5
—
—
—
-2.0
—
—
-1.0
-10
V
mV/°C
S
nA
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Typ Max Units
Test Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1.0mA
VGS = -4.5V, ID = -14.9A Ã
VDS = VGS, ID = -250µA
nC
VDS = -10V, IDS = -14.9A Ã
VDS = -48V ,VGS = 0V
VDS = -48V,
VGS = 0V, TJ = 125°C
VGS = -10V
VGS = 10V
VGS = -4.5V, ID = -22A
VDS = -30V
ns
VDD = -30V, ID = -22A,
VGS = -5.0V, RG = 7.5Ω
µA
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
-100
100
36
10
18
32
250
100
85
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
2261
583
91
—
—
—
pF
Rg
Gate Resistance
20
Ω
nH
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = -25V
f = 1.0MHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
-22*
-88
-5.0
110
132
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = -22A, VGS = 0V Ã
Tj = 25°C, IF = -22A, di/dt ≤ -100A/µs
VDD ≤ -25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
R thJC
Junction-to-Case
Min Typ Max Units
—
—
2.2
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHLNJ797034, 2N7624U3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
V GS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Upto 300K Rads (Si)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-3)
Static Drain-to-Source On-state „
Resistance (SMD-0.5)
Diode Forward Voltage„
Units
Test Conditions
V
VGS = 0V, ID = -250µA
VGS = VDS , ID = -250µA
VGS = -10V
VGS = 10V
VDS = -48V, VGS= 0V
Min
Max
-60
-1.0
—
—
—
—
-2.0
-100
100
-1.0
µA
0.076
Ω
VGS = -4.5V, ID = -14.9A
—
0.072
Ω
VGS = -4.5V, ID = -14.9A
—
-5.0
V
VGS = 0V, ID = -22A
—
nA
1. Part numbers IRHLNJ797034, IRHLNJ793034
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
2
(MeV/(mg/cm ))
Energy
Range
(MeV)
(µm)
VDS (V)
@VGS=
@VGS=
@VGS=
@VGS=
@VGS=
@VGS=
0V
2V
4V
5V
6V
7V
300 ± 7.5%
38 ± 7.5%
-60
-60
-60
-60
-60
-40
62 ± 5%
355 ± 7.5%
33 ± 7.5%
-60
-60
-60
-60
-60
-
85 ± 5%
380 ± 7.5%
29 ± 7.5%
-60
-60
-60
-60
-
-
Bias VDS (V)
38 ± 5%
-70
-60
-50
-40
-30
-20
-10
0
LET=38 ± 5%
LET=62 ± 5%
LET=85 ± 5%
0
1
2
3
4
5
6
7
Bias VGS (V)
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHLNJ797034, 2N7624U3
Pre-Irradiation
100
100
TOP
-I D, Drain-to-Source Current (A)
-I D, Drain-to-Source Current (A)
VGS
TOP
-10V
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.5V
BOTTOM -2.3V
10
-2.3V
20µs PULSE WIDTH
Tj = 25°C
BOTTOM
-2.3V
10
20µs PULSE WIDTH
Tj = 150°C
1
1
0.1
1
10
100
0.1
1000
10
100
1000
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
100
-I D, Drain-to-Source Current (A)
1
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
T J = 150°C
T J = 25°C
10
VDS = -25V
60µs PULSE
WIDTH
15
1
ID = -22A
1.5
1.0
0.5
VGS = -4.5V
0.0
2
2.5
3
3.5
4
4.5
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
VGS
-10V
-5.0V
-4.5V
-4.0V
-3.0V
-2.7V
-2.5V
-2.3V
5
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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ID = -22A
140
120
100
T J = 150°C
80
60
40
T J = 25°C
20
0
4
6
8
10
12
RDS(on), Drain-to -Source On Resistance ( mΩ)
160
2
-V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
IRHLNJ797034, 2N7624U3
140
130
120
110
T J = 150°C
100
90
80
70
T J = 25°C
60
50
Vgs = -4.5V
40
30
0
10
20
30
40
50
60
70
-VGS, Gate -to -Source Voltage (V)
-I D, Drain Current (A)
Fig 5. Typical On-Resistance Vs
Gate Voltage
Fig 6. Typical On-Resistance Vs
Drain Current
75
80
2.5
ID = -1.0mA
-VGS(th) Gate threshold Voltage (V)
RDS(on), Drain-to -Source On Resistance (mΩ)
Pre-Irradiation
70
65
60
2.0
1.5
1.0
0.5
ID = -50µA
ID = -250µA
ID = -1.0mA
ID = -150mA
0.0
55
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
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-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
Fig 8. Typical Threshold Voltage Vs
Temperature
5
IRHLNJ797034, 2N7624U3
3200
VGS = 0V,
f = 1 MHz
C iss = C gs + C gd, C ds SHORTED
2800
C oss = C ds + C gd
12
C rss = C gd
2400
-VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
3600
Pre-Irradiation
Ciss
2000
1600
Coss
1200
800
400
ID = -22A
10
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 17
Crss
0
0
1
10
100
0
-VDS, Drain-to-Source Voltage (V)
10
20
30
40
50
60
70
80
QG, Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
25
100
LIMITED BY PACKAGE
20
T J = 150°C
10
-I D, Drain Current (A)
-I SD , Reverse Drain Current (A)
VDS = -48V
VDS = -30V
VDS = -12V
T J = 25°C
1
15
10
5
VGS = 0V
0.1
0
0
1
2
3
4
5
6
-V SD , Source-to-Drain Voltage (V)
Fig 11. Typical Source-to-Drain Diode
Forward Voltage
6
25
50
75
100
125
150
T C , Case Temperature (°C)
Fig 12. Maximum Drain Current Vs.
Case Temperature
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Pre-Irradiation
IRHLNJ797034, 2N7624U3
140
EAS , Single Pulse Avalanche Energy (mJ)
-I D, Drain-to-Source Current (A)
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
100µs
10
1ms
1
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
DC
ID
-9.8A
-13.9A
BOTTOM -22A
120
TOP
100
80
60
40
20
0
1
10
100
-V DS , Drain-to-Source Voltage (V)
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy
Vs. Drain Current
Thermal Response ( Z thJC )
10
D = 0.50
1
0.20
P DM
0.10
t1
0.05
0.1
t2
SINGLE PULSE
( THERMAL RESPONSE )
0.02
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRHLNJ797034, 2N7624U3
Pre-Irradiation
I AS
L
VDS
-
D.U.T
RG
+
IAS
VGS
-20V
tp
VVDD
DD
A
DRIVER
0.01Ω
tp
15V
V(BR)DSS
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
-4.5V
QGS
50KΩ
-12V
12V
.2µF
.3µF
QGD
+VDS
D.U.T.
VGS
VG
-3mA
IG
Charge
Fig 17a. Basic Gate Charge Waveform
V DS
VGS
RG
Fig 17b. Gate Charge Test Circuit
RD
td(on)
tr
t d(off)
tf
VGS
D.U.T.
10%
-
+
V GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
8
ID
Current Sampling Resistors
V DD
90%
VDS
Fig 18b. Switching Time Waveforms
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Pre-Irradiation
IRHLNJ797034, 2N7624U3
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = -25V, starting TJ = 25°C, L = 0.32mH
Peak IL = -22A, VGS = -10V
 ISD ≤ -22A, di/dt ≤ -350A/µs,
VDD ≤ -60V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
-10 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
-48 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
1 = DRAIN
2 = GATE
3 = SOURCE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 10/2010
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9