Bulletin I27092 rev. A 09/97 IRK.F132.. SERIES INT-A-pakä Power Modules FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features 130 A Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate 3000 V RMS isolating voltage Industrial standard package UL E78996 approved Description These series of INT-A-pak modules are intended for applications such as self-commutated inverters, DC choppers, electronic welders, induction heating and others where fast switching characteristics are required. Major Ratings and Characteristics Parameters IRK.F132.. Units 130 A 90 °C 293 A @ 50Hz 3210 A @ 60Hz 3360 A @ 50Hz 51.5 KA 2s @ 60Hz 47.0 KA 2s 515 KA 2√s tq 15 µs t rr 2 µs I T(AV) @ TC I T(RMS) I TSM 2 I t I 2√t VDRM / V RRM TJ range www.irf.com up to 800 V - 40 to 125 o C 1 IRK.F132.. Series Bulletin I27092 rev. A 09/97 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number IRK.F132.. Voltage VRRM/VDRM, maximum repetitive VRSM , maximum non- IRRM/I DRM max. Code peak reverse voltage repetitive peak rev. voltage @ T J = 125°C V V mA 04 400 400 08 800 800 30 Current Carrying Capacity ITM ITM Frequency f o 180 el ITM Units 100µs 180 el o 50Hz 250 420 408 640 2465 3460 400Hz 320 530 485 800 1470 2150 A A 2500Hz 240 390 400 650 540 830 A 5000Hz 210 340 340 530 340 530 A 10000Hz 160 275 300 415 - - A 50 50 50 50 Recovery voltage Vr 50 Voltage before turn-on Vd 80% VDRM 80% VDRM 50 V 80% VDRM V Rise of on-state current di/dt 50 50 - - - - A/µ s Case temperature 90 60 90 60 90 60 °C Equivalent values for RC circuit 47 Ω / 0.22 µF 47 Ω / 0.22 µF 47 Ω / 0.22 µF On-state Conduction Parameter IT(AV) IRK.F132.. Units Conditions Maximum average on-state current 130 A @ Case temperature 90 °C 180° conduction, half sine wave IT(RMS) Maximum RMS current 293 A TC = 90°C, as AC switch ITSM Maximum peak, one-cycle, 3210 A t = 10ms No voltage non-repetitive surge current 3360 t = 8.3ms reapplied 2700 t = 10ms 100% VRRM 2825 t = 8.3ms reapplied Sinusoidal half wave, t = 10ms No voltage Initial TJ = 125°C 47.0 t = 8.3ms reapplied 36.5 t = 10ms 100% VRRM 33.3 t = 8.3ms reapplied I2t I2 √t Maximum I2 t for fusing Maximum I2√t for fusing 51.5 515 VT(TO)1 Low level value of threshold voltage 1.16 VT(TO)2 High level value of threshold voltage 1.25 KA2 s KA2√s t = 0 to 10ms, no voltage reapplied V (16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max. (I > π x IT(AV) ), TJ = TJ max. Low level value of on-state slope resistance 0.92 High level value of on-state slope resistance 0.77 VTM Maximum on-state voltage drop 1.71 V IH Maximum holding current 600 mA TJ = 25°C, IT > 30 A IL Typical latching current 1000 mA TJ = 25°C, VA = 12V, Ra = 6Ω, Ig = 1A 2 mW (16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max. r t1 r t2 (I > π x IT(AV) ), TJ = TJ max. Ipk = 600A, TJ = TJ max., tp = 10ms sine pulse www.irf.com IRK.F132.. Series Bulletin I27092 rev. A 09/97 Switching Parameter IRK.F132.. di/dt Maximum non-repetitive rate of rise trr Maximum recovery time tq Maximum turn-off time Units Conditions 800 A/µs 2 µs Gate drive 20V, 20Ω, tr ≤ 1ms, VD= 80% VDRM T J = 25°C L 15 ITM = 350A, di/dt = -25A/µs, VR = 50V, TJ = 25°C ITM = 350A, T J = 125°C, di/dt = -25A/µs, µs VR = 50V, dv/dt = 400V/µs linear to 80% V DRM Blocking Parameter dv/dt IRK.F132.. Maximum critical rate of rise of off-state 1000 Units Conditions V/µs TJ = 125°C., exponential to = 67% VDRM 3000 V 50 Hz, circuit to base, TJ = 25°C, t = 1 s 30 mA voltage VINS RMS isolation voltage IRRM Maximum peak reverse and off-state IDRM leakage current TJ = 125°C, rated VDRM/VRRM applied Triggering Parameter IRK.F132.. Units Conditions P GM Maximum peak gate power 60 W f = 50 Hz, d% = 50 P G(AV) Maximum peak average gate power 10 W TJ = 125°C, f = 50Hz, d% = 50 TJ = 125°C, tp < 5ms IGM Maximum peak positive gate current 10 A - VGM Maximum peak negative gate voltage 5 V IGT Max. DC gate current required to trigger 200 mA V GT DC gate voltage required to trigger 3 V IGD DC gate current not to trigger 20 mA V GD DC gate voltage not to trigger 0.25 V TJ = 25°C, Vak 12V, Ra = 6 TJ = 125°C, rated VDRM applied Thermal and Mechanical Specifications Parameter IRK.F132.. TJ Max. junction operating temperature range - 40 to 125 T stg Max. storage temperature range - 40 to 150 R thJC Max. thermal resistance, junction to Units Conditions °C 0.17 K/W Per junction, DC operation 0.035 K/W Mounting surface flat and greased case RthC-hs Max. thermal resistance, case to heatsink T Mounting torque ± 10% wt Approximate weight www.irf.com Per module IAP to heatsink 4 - 6 (35 - 53) busbar to IAP 4 - 6 (35 - 53) 500 (17.8) A mounting compound is recommended. The torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Use of cable lugs is (lb*in) not recommendd, busbars should be used and restrained during tightening. Threads must be g (oz) lubricated with a compound Nm 3 IRK.F132.. Series Bulletin I27092 rev. A 09/97 ∆RthJC Conduction (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction 180° 0.016 0.011 120° 0.019 0.020 90° 0.024 0.026 60° 0.035 0.037 30° 0.060 0.060 Units Conditions K/W TJ = 125°C Ordering Information Table Device Code IRK T F 13 2 1 2 3 4 5 1 - Module type 2 - Circuit configuration 3 - Fast SCR 4 - Current rating: IT(AV) x 10 rounded 5 - 1= 2= - 08 H L N 6 7 8 8 option with spacers and longer terminal screws option with standard terminal screws 6 - Voltage code: Code x 100 = VRRM (See Voltage Ratings Table) 7 - dv/dt code: H ≤ 400V/µs 8 - tq code: L ≤ 15µs 9 - None = Standard devices N = Aluminum nitrade substrate NOTE: To order the Optional Hardware see Bulletin I27900 4 www.irf.com IRK.F132.. Series Bulletin I27092 rev. A 09/97 Outline Table - All dimensions in millimeters (inches) - Dimensions are nominal - Full engineering drawings are available on request - UL identification number for gate and cathode wire: UL 1385 - UL identification number for package: UL 94V0 For all types A B C D E IRK...1 25 (0.98) ---- ---- 41 (1.61) 47 (1.85) IRK...2 23 (0.91) 30 (1.18) 36 (1.42) ---- ---- IRKHF.. IRKLF.. IRKUF.. 130 IRK.F132.. Series R thJC (DC) = 0.17 K/W 120 110 Conduction Angle 100 90 30° 60° 90° 80 120° 180° 70 0 20 40 60 80 100 120 140 IRKVF.. Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) IRKTF.. IRKKF.. IRKNF.. 130 IRK.F132.. Series R thJC (DC) = 0.17 K/W 120 110 Conduction Period 100 30° 90 60° 90° 120° 80 180° DC 70 0 25 50 75 100 125 150 175 200 225 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics www.irf.com 5 IRK.F132.. Series 180° 120° 90° 60° 30° 175 150 125 100 RMS Limit 75 Conduction Angle 50 IRK.F132.. Series Per Junction T J = 125°C 25 0 0 20 40 60 80 100 120 140 Maximum Average On-state Power Loss (W) 200 300 DC 180° 120° 90° 60° 30° 250 200 150 RMS Limit Conduction Period 100 IRK.F132.. Series Per Junction T J = 125°C 50 0 0 40 160 200 240 Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics 3000 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 2800 2600 2400 2200 2000 1800 1600 IRK.F132.. Series Per Junction 1400 1200 10 100 3200 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C No Voltage Reapplied Rated V RRMReapplied 3000 2800 2600 2400 2200 2000 1800 1600 1400 IRK.F132.. Series Per Junction 1200 0.01 Transient Thermal Impedance Z thJC (K/W) 1000 T J = 25°C T J = 125°C 100 IRK.F132.. Series Per Junction 10 0.5 1 1.5 2 2.5 3 3.5 4 1 Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 5 - Maximum Non-Repetitive Surge Current 10000 0.1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cyc le Curre nt Pulses (N) Instantaneous On-state Current (A) 120 Average On-state Current (A) 1 6 80 Average On-state Current (A) Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) Bulletin I27092 rev. A 09/97 1 Steady State Value R thJC = 0.17 K/W (DC Operation) 0.1 0.01 IRK.F132.. Series Per Junction 0.001 0.001 0.01 0.1 1 10 100 Instantaneous On-state Voltage (V) Square Wave Pulse Duration (s) Fig. 7 - On-state Voltage Drop Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristic www.irf.com IRK.F132.. Series 250 IRK.F132.. Series T J = 125 °C 200 Maximum Reverse Recovery Current - Irr (A) Maximum Reverse Recovery Charge - Qrr (µC) Bulletin I27092 rev. A 09/97 I TM = 500 A 300 A 200 A 150 100 A 100 50 A 50 0 0 20 40 60 80 100 Rate Of Fall Of On-state Current - di/dt (A/µs) 150 I TM = 500 A IRK.F132.. Series T J = 125 °C 120 300 A 200 A 100 A 50 A 90 60 30 0 0 20 40 60 80 100 Rate Of Fall Of On-state Current - di/dt (A/µs) Fig. 9 - Reverse Recovery Charge Characteristics Fig. 10 - Reverse Recovery Current Characteristics Peak On-state Current (A) 1E4 tp IRK.F132.. Series Sinusoidal Pulse T C = 90 °C Snubber circuit R s = 47 ohms C s = 0.22 µF V D = 80% V DRM 50 Hz 150 400 50 Hz 1000 150 400 1E3 2500 1000 5000 2500 5000 tp 1E2 1E1 1E2 1E1 1E41E1 1E4 1E3 Snubber c ir cuit R s = 47 ohms C s = 0.22 µF V D = 80% V DRM IRK.F132.. Series Sinusoidal Pulse T C = 60 °C 1E2 Pulse Basewidth (µs) 1E3 1E4 Pulse Basewidth (µs) Fig. 11 - Frequency Characteristics Peak On-state Current (A) 1E4 tp Snubber circuit R s = 47 ohms C s = 0.22 µF V D = 80% V DRM IRK.F132.. Series Trapezoidal Pulse T C = 90°C, di/dt 50A/µs tp Snubber circuit R s = 47 ohms C s = 0.22 µF V D = 80% V DRM IRK.F132.. Series Trapezoidal Pulse T C = 90°C, di/dt 100A/µs 50 Hz 1E3 150 150 400 1000 1000 2500 2500 5000 1E2 1E1 50 Hz 400 5000 1E2 1E3 1E4 1E41E1 1E1 Pulse Basewidth (µs) 1E2 1E3 1E4 Pulse Basewidth (µs) Fig. 12 - Frequency Characteristics www.irf.com 7 IRK.F132.. Series Bulletin I27092 rev. A 09/97 Peak On-state Current (A) 1E4 tp Snubber circuit R s = 47 ohms C s = 0.22 µF V D = 80% V DRM IRK.F132.. Series Trapezoidal Pulse T C = 60°C, di/dt 50A/µs Snubber circuit R s = 47 ohms C s = 0.22 µF V D = 80% V DRM IRK.F132.. Series Trapezoidal Pulse T C = 60°C, di/dt 100A/µs tp 50 Hz 1E3 1000 150 150 400 1000 2500 2500 5000 1E2 1E1 50 Hz 400 5000 1E2 1E4 1E1 1E41E1 1E3 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 13 - Frequency Characteristics 1E4 10 joules per pulse 1E3 0.25 5 0.5 1 2.5 1 2.5 0.5 0.25 0.1 0.1 0.05 0.05 1E2 tp IRK.F132..Series Trapezoidal Pulse di/dt 50A/µs IRK.F132.. Series Sinusoidal pulse tp 1E1 1E1 1E2 1E3 1E41E1 1E4 1E1 1E2 Pulse Basewidth (µs) 1E3 1E4 Pulse Basewidth (µs) Fig. 14 - Maximum On-state Energy Power Loss Characteristics 100 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/dt : 10V, 10ohms tr<=1 µs 10 (a) (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, tp tp tp tp = 20ms = 10ms = 5ms = 3.3ms (b) VGD IGD 0.1 0.01 Tj=-40 °C 1 Tj=25 °C Tj= 125 °C Instantaneous Gate Voltage (V) Peak On-state Current (A) 10 joules per pulse 5 (1) IRK.F132.. Series 0.1 (2) (3) (4) Frequency Limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 15 - Gate Characteristics 8 www.irf.com