IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET VDSS ID25 RDS(on) Q-Class Electrically Isolated Back Surface = 800 V = 13 A = 0.65 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg ISOPLUS220TM Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 13 A IDM TC = 25°C, pulse width limited by TJM 60 A IAR TC = 25°C 15 A EAR TC = 25°C 30 mJ EAS TC = 25°C 1.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 10 V/ns 230 W -40 ... +150 150 -40 ... +150 °C °C °C 300 °C 2500 V TJ ≤ 150°C, RG = 2 Ω PD TC = 25°C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s VISOL 50/60 Hz, RMS t = 1 min leads to tab FC mounting force with clip 11...65 / 2.5...15 N/lb 2 g G D S G = Gate S = Source Isolated back surface* D = Drain Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<35pF) z Low RDS (on) z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Fast intrinsic Rectifier z Applications Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. DC-DC converters Battery chargers z Switched-mode and resonant-mode power supplies z DC choppers z AC motor control VDSS VGS = 0 V, ID = 3 mA 800 V Advantages VGS(th) VDS = VGS, ID = 4 mA 2.0 4.5 V z IGSS VGS = ±20 VDC, VDS = 0 ±100 nA IDSS VDS = VDSS VGS = 0 V 25 1 µA mA RDS(on) V GS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 0.65 Ω Weight © 2003 IXYS All rights reserved TJ = 25°C TJ = 125°C z z z z Easy assembly: no screws or isolation foils required Space savings High power density See IXFH15N80Q data sheet for characteristic curves DS98946B(07/03) IXFC 15N80Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS = 10 V; ID = 0.5 ID25, pulse test 8 16 S 4300 pF 360 pF Crss 60 pF td(on) 18 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 27 ns td(off) RG = 1.5 Ω (External) 53 ns tf 16 ns Qg(on) 90 nC 20 nC 30 nC Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 0.54 RthJC RthCK (TO-247) Source-Drain Diode 0.25 K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 15 A ISM Repetitive; 60 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V 250 ns µC A t rr QRM IRM ISOPLUS220 Outline IF = IS-di/dt = 100 A/µs, VR = 100 V 0.85 8 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343