IXYS IXFR55N50

VDSS
HiPerFETTM Power MOSFETs
ISOPLUS247TM
IXFR 50N50
IXFR 55N50
(Electrically Isolated Back Surface)
ID25
RDS(on)
Ω
100 mΩ
Ω
90 mΩ
500 V 43 A
500 V 48 A
trr ≤ 250 ns
Single Die MOSFET
Maximum Ratings
ISOPLUS 247TM
Symbol
Test Conditions
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
500
500
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
TC = 25°C
IDM
TC = 25°C, Pulse width limited by TJM
IAR
TC = 25°C
43
48
200
220
50
55
A
A
A
A
A
A
EAR
TC = 25°C
60
mJ
EAS
TC = 25°C
3
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
PD
TC = 25°C
400
W
-40 ... +150
150
-40 ... +150
°C
°C
°C
l
300
°C
l
2500
V~
l
5
g
TJ
TJM
Tstg
TL
1.6 mm (0.063 in.) from case for 10 s
VISOL
50/60 Hz, RMS
50N50
55N50
50N50
55N50
50N50
55N50
t = 1 min
Weight
G
Isolated back surface*
G = Gate
S = Source
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 1mA
500
V
VGS(th)
VDS = VGS, ID = 8mA
2.5
4.5 V
IGSS
VGS = ±20 V, VDS = 0
Features
l
l
l
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
RDS(on)
VGS = 10 V, ID = IT
Note 1
50N50
55N50
© 2002 IXYS All rights reserved
25 µA
2 mA
100 mΩ
90 mΩ
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<50pF)
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
Applications
l
l
l
l
±200 nA
D = Drain
* Patent pending
l
Symbol
D
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Advantages
l
l
l
Easy assembly
Space savings
High power density
98588B (04/02)
IXFR 50N50
IXFR 55N50
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
V DS = 10 V; ID = IT
Note 1
45
S
9400
pF
1280
pF
Crss
460
pF
td(on)
45
ns
60
ns
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
td(off)
RG = 1 Ω (External),
120
ns
45
ns
330
nC
55
nC
155
nC
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
Qgd
0.30
RthJC
0.15
RthCK
Source-Drain Diode
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
55N50
50N50
55
50
A
A
ISM
Repetitive;
pulse width limited by TJM
55N50
50N50
220
200
A
A
VSD
IF = IS, VGS = 0 V
1.5
V
250
ns
t rr
QRM
ISOPLUS 247 OUTLINE
IF = 25A,-di/dt = 100 A/µs, VR = 100 V
1.0
µC
10
A
IRM
See IXFK55N50 data sheet for
characteristic curves.
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2. IT test current:
50N50 IT = 25A
55N50 IT = 27.5A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
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