HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM Q CLASS VDSS ID25 RDS(on) 12N100Q 1000 V 10 A IXFR 10N100Q 1000 V 9A (Electrically Isolated Back Surface) trr ≤ 300 µs 1.1 Ω 1.20 Ω N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 TC = 25°C IDM TC = 25°C, Pulse width limited by TJM IAR TC = 25°C EAR TC = 25°C dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω PD Maximum Ratings 12N100 10N100 12N100 10N100 12N100 10N100 TL 1.6 mm (0.063 in.) from case for 10 s VISOL 50/60 Hz, RMS V V ±20 ±30 V V 10 9 48 40 12 10 A A A A A A 30 mJ 5 V/ns Isolated back surface* G = Gate S = Source D = Drain * Patent pending Features ● TC = 25°C TJ TJM Tstg 1000 1000 ISOPLUS 247TM 250 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 2500 V~ 5 g t = 1 min Weight Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation ● Low drain to tab capacitance(<50pF) ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Unclamped Inductive Switching (UIS) rated ● Fast intrinsic Rectifier Applications ● Symbol Test Conditions VDSS VGS = 0 V, ID = 3mA 1000 2.5 VGS(th) VDS = VGS, ID = 4mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8•VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = IT Notes 1 & 2 © 2002 IXYS All rights reserved Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. V 5.5 V ±100 nA TJ = 25°C TJ = 125°C 50 1 µA mA 12N100 10N100 1.1 1.2 Ω Ω DC-DC converters Battery chargers ● Switched-mode and resonant-mode power supplies ● DC choppers ● AC motor control ● Advantages ● ● ● Easy assembly Space savings High power density DS98589-B (10/02) IXFR 10N100Q IXFR 12N100Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 15 V; ID = IT Note 1 4 10 S 2900 pF 315 pF C rss 50 pF td(on) 20 ns C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = IT 23 ns td(off) RG = 1 Ω (External), 40 ns tf 15 ns Qg(on) 90 nC 30 nC 40 nC Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = IT Qgd RthJC 0.50 RthCK 0.15 Source-Drain Diode K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 12 A ISM Repetitive; pulse width limited by TJM 48 A VSD IF = IS, VGS = 0 V, Note 1 1.3 V 300 ns t rr QRM ISOPLUS 247 OUTLINE 200 IF = Is, -di/dt = 100 A/µs, VR = 100 V IRM 1.6 µC 7 A Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IXFR10N100 IT = 5A 2. IT test current: IXFR12N100 IT = 6A Note: Please see IXFH12N100Q Data Sheet for characteristic curves. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1