IXYS IXFH12N100P

PolarTM HiPerFETTM
Power MOSFETs
IXFH12N100P
IXFV12N100P
IXFV12N100PS
VDSS
ID25
RDS(on)
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol
Test Conditions
VDSS
TJ = 25°C to 150°C
1000
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
1000
V
VGSS
Continuous
± 30
V
VGSM
Transient
± 40
V
ID25
TC = 25°C
12
A
IDM
TC = 25°C, Pulse Width Limited by TJM
24
A
IAR
TC = 25°C
6
A
EAS
TC = 25°C
750
mJ
dv/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
15
V/ns
PD
TC = 25°C
463
W
Maximum Ratings
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TJ
Maximum Lead Temperature for Soldering
300
°C
TSOLD
Plastic Body for 10s
260
°C
Md
Mounting Torque (TO-247)
1.13/10
Nm/lb.in.
Weight
TO-247
PLUS220 types
D
S
D (Tab)
PLUS220SMD (IXFV_S)
TL
Mounting Force (PLUS220)
1000V
12A
Ω
1.05Ω
300ns
PLUS220 (IXFV)
G
FC
=
=
≤
≤
11..65/2.5..14.6
N/lb.
6
4
g
g
G
S
D (Tab)
TO-247 (IXFH)
G
D
S
G = Gate
S = Source
D (Tab)
D
= Drain
Tab = Drain
Features
z
z
z
z
Low RDS(on) and QG
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
Advantages
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 1mA
1000
VGS(th)
VDS = VGS, ID = 1mA
3.5
IGSS
VGS = ± 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
RDS(on)
TJ = 125°C
VGS = 10V, ID = 0.5 • ID25, Note 1
z
z
z
V
6.5
V
± 100
nA
20 μA
1.0 mA
1.05
Ω
Applications
z
z
z
z
z
© 2011 IXYS CORPORATION, All Rights Reserved
High Power Density
Easy to Mount
Space Savings
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
DS99920B(03/11)
IXFH12N100P IXFV12N100P
IXFV12N100PS
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
RGi
Gate Input Resistance
Characteristic Values
Min.
Typ.
Max.
4.8
Ciss
Coss
8.8
S
1.9
Ω
4080
pF
246
pF
40
pF
30
ns
VGS = 0V, VDS = 25V, f = 1MHz
Crss
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2Ω (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
25
ns
60
ns
36
ns
80
nC
24
nC
35
nC
0.27 °C/W
RthJC
RthCS
PLUS220 Outline
(TO-247&PLUS220)
0.25
Source-Drain Diode
TJ = 25°C Unless Otherwise Specified)
°C/W
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0V
12
A
ISM
Repetitive, Pulse Width Limited by TJM
48
A
VSD
IF = IS, VGS = 0V, Note 1
1.5
V
trr
QRM
IRM
Note
TO-247 Outline
300 ns
IF = 6A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
0.8
μC
7.9
A
1
2
∅P
3
1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
e
Terminals: 1 - Gate
3 - Source
PLUS220SMD Outline
Dim.
Millimeter
Min. Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
2 - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFH12N100P IXFV12N100P
IXFV12N100PS
Fig. 1. Output Characteristics @ T J = 25ºC
Fig. 2. Extended Output Characteristics @ T J = 25ºC
24
12
VGS = 10V
8V
VGS = 10V
8V
20
10
7V
16
ID - Amperes
ID - Amperes
8
6V
6
12
6V
8
4
2
4
5V
5V
0
0
0
1
2
3
4
5
6
7
8
9
10
11
0
12
5
10
20
25
30
VDS - Volts
Fig. 3. Output Characteristics @ T J = 125ºC
Fig. 4. RDS(on) Normalized to ID = 6A Value vs.
Junction Temperature
3.2
VGS = 10V
7V
8
6V
6
5V
4
VGS = 10V
2.8
R DS(on) - Normalized
10
2
2.4
I D = 12A
2.0
I D = 6A
1.6
1.2
0.8
0
0.4
0
5
10
15
20
25
30
-50
-25
0
VDS - Volts
25
50
75
100
125
150
125
150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 6A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
14
2.8
2.6
VGS = 10V
12
TJ = 125ºC
2.4
10
2.2
ID - Amperes
R DS(on) - Normalized
15
VDS - Volts
12
ID - Amperes
7V
2.0
1.8
1.6
1.4
8
6
4
1.2
TJ = 25ºC
2
1.0
0.8
0
0
2
4
6
8
10
12
14
16
ID - Amperes
© 2011 IXYS CORPORATION, All Rights Reserved
18
20
22
24
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
IXFH12N100P IXFV12N100P
IXFV12N100PS
Fig. 7. Input Admittance
18
14
16
TJ = - 40ºC
14
12
TJ = 125ºC
25ºC
- 40ºC
10
8
6
25ºC
12
g f s - Siemens
ID - Amperes
Fig. 8. Transconductance
16
125ºC
10
8
6
4
4
2
2
0
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0
6.5
2
4
6
8
10
12
14
16
18
ID - Amperes
VGS - Volts
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
40
16
35
14
VDS = 500V
30
12
25
10
VGS - Volts
IS - Amperes
I D = 6A
20
TJ = 125ºC
15
I G = 10mA
8
6
TJ = 25ºC
10
4
5
2
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1.1
10
20
30
40
50
60
70
80
90
100
110
QG - NanoCoulombs
VSD - Volts
Fig. 12. Maximum Transient Thermal Impedance
Fig. 11. Capacitance
1
10,000
1,000
Z(th)JC - ºC / W
Capacitance - PicoFarads
Ciss
Coss
100
Crss
f = 1 MHz
10
0
5
0.1
10
15
20
25
30
35
40
VDS - Volts
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_12N100P(75-744)4-01-08-A