HiPerFASTTM IGBT C2-Class High Speed IGBTs VCES IC25 VCE(sat) tfi typ IXGH 40N60C2 IXGT 40N60C2 = 600 V = 75 A = 2.7 V = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by leads) 75 A IC110 TC = 110°C 40 A ICM TC = 25°C, 1 ms 200 A SSOA (RBSOA) PC VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 600 V TC = 25°C G E TO-247 (IXGH) C (TAB) G ICM = 80 A 300 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C Features 300 °C z TJ Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Plastic body °C 200 Mounting torque (M3) z z 1.13/10Nm/lb.in. Weight TO-247 TO-268 6 4 g g Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. z z z = 250 μA, VCE = VGE VGE(th) IC ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC 3.0 5.0 V 50 1 μA mA ±100 nA 2.7 V V z z TJ = 25°C TJ = 150°C © 2005 IXYS All rights reserved TJ = 25°C TJ = 150°C 2.2 2.0 C = Collector, TAB = Collector Very high frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity PFC circuits Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages z = 30 A, VGE = 15 V E Applications z Symbol C G = Gate, E = Emitter, z Md C (TAB) z High power density Very fast switching speeds for high frequency applications DS99042C(10/05) IXGH 40N60C2 IXGT 40N60C2 Symbol gfs Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. IC = 30 A; VCE = 10 V, Pulse test, t ≤ 300 μs, duty cycle ≤ 2 % 20 S 2500 pF 180 pF 54 pF 95 nC 14 nC 36 nC 18 ns ∅P Cies Coes 36 VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg Qge IC = 30 A, VGE = 15 V, VCE = 300 V Qgc td(on) tri Inductive load, TJ = 25°°C 20 td(off) IC = 30 A, VGE = 15 V VCE = 400 V, RG = Roff = 3 Ω 90 tfi Eoff Eon td(off) tfi Inductive load, TJ = 125°°C IC = 30 A, VGE = 15 V VCE = 400 V, RG = Roff = 3 Ω 0.20 0.37 mJ 18 ns 20 ns 0.3 mJ 130 ns 240 0.50 RthJC RthCK ns ns 80 Eoff ns 140 32 td(on) tri TO-247 AD Outline e Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC ns mJ TO-268 Outline 0.42 K/W (TO-247) 0.25 K/W Min. Recommended Footprint (Dimensions in inches and mm) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXGH 40N60C2 IXGT 40N60C2 Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25 Deg. C @ 25 deg. C 210 60 VGE = 15V 13V 11V 50 180 9V 150 I C - Amperes 40 I C - Amperes VG E = 15V 13V 11V 9V 7V 30 20 120 90 7V 60 10 30 5V 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 0 1 2 3 Fig. 3. Output Characteristics 60 6 7 1.3 VG E = 15V 13V 11V 9V 1.2 40 VC E (sat) - Normalized 50 I C - Amperes 5 Fig. 4. T emperature Dependence of V CE(sat) @ 125 Deg. C 7V 30 20 I C = 60A 1.1 VG E = 15V 1 0.9 I C = 30A 0.8 5V 10 0.7 0 I C = 15A 0.6 0.5 1 1.5 2 2.5 25 3 50 75 100 125 150 TJ - Degrees Centigrade V CE - Volts Fig. 5. Collector-to-Emitter Voltage Fig. 6. Input Admittance vs. Gate-to-Emitter voltage 210 4 T J = 25º C 180 3.5 3 I C - Amperes VC E - Volts 4 V C E - Volts V C E - Volts 2.5 I C = 60A 2 150 120 90 T J = 125º C 60 30A 25º C 1.5 -40º C 30 15A 1 0 5 6 7 8 9 10 11 V G E - Volts © 2005 IXYS All rights reserved 12 13 14 15 4 5 6 7 V G E - Volts 8 9 10 IXGH 40N60C2 IXGT 40N60C2 Fig. 7. Transconductance Fig. 8. Dependence of Eoff on RG 70 1.8 60 E off - milliJoules 125º C 40 30 20 I C = 60A TJ = 125º C VGE = 15V VC E = 400V 1.4 25º C 50 g f s - Siemens 1.6 T J = -40º C 1.2 1 I C = 45A 0.8 0.6 I C = 30A 0.4 10 0.2 0 I C = 15A 0 0 30 60 90 120 150 180 2 4 6 I C - Amperes 1.6 1.6 R G = 3 Ohms R G= 10 Ohms - - - - - E off - milliJoules E off - MilliJoules T J = 125ºC 0.6 16 I C = 45A 0.8 0.6 0.4 0.2 0.2 T J = 25ºC I C = 60A 1 0.4 I C = 30A I C = 15A 0 0 10 20 30 40 50 25 60 50 I C - Amperes 75 100 125 TJ - Degrees Centigrade Fig. 12. Capacitance Fig. 11. Gate Charge 10000 15 f = 1M Hz Capacitance - p F VC E = 300V I C = 30A I G = 10mA 12 VG E - Volts 14 VG E = 15V VC E = 400V 1.2 1 0.8 12 R G = 3 Ohms R G = 10 Ohms - - - - - 1.4 VG E = 15V VC E = 400V 1.2 10 Fig. 10. Dependence of Eoff on T emperature Fig. 9. Dependence of Eoff on IC 1.4 8 R G - Ohms 9 6 C ies 1000 C oes 100 3 C res 10 0 0 20 40 60 80 100 Q G - nanoCoulombs IXYS reserves the right to change limits, test conditions, and dimensions. 0 5 10 15 20 25 V C E - Volts 30 35 40 IXGH 40N60C2 IXGT 40N60C2 F ig . 13. M aximu m Tran sien t Th ermal R esistan ce 0 .5 R (th) J C - (ºC/W) 0 .4 0 .3 0 .2 0 .1 0 1 10 100 Puls e W idth - millis ec onds © 2005 IXYS All rights reserved 10 0 0