ADVANCE TECHNICAL INFORMATION IXTH 10P60 VDSS = -600 V = -10 A ID25 RDS(on) = 1Ω Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ -600 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C -10 A IDM TC = 25°C, pulse width limited by TJ -40 A IAR TC = 25°C -10 A EAR TC = 25°C 30 mJ PD TC = 25°C 300 W -55 ... +150 °C TJ TJM 150 °C Tstg -55 ... +150 °C 300 °C TL Md Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s TO-247 AD D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Features • International standard package JEDEC TO-247 AD • Low R HDMOS process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) TM DS (on) Mounting torque 1.13/10 Nm/lb.in. 6 Weight g rated • Low package inductance (<5 nH) - easy to drive and to protect Applications Symbol Test Conditions VDSS V GS = 0 V, ID = -250 µA -600 VGS(th) V DS = VGS, ID = -250 µA -3.0 IGSS V GS = ±20 VDC, VDS = 0 IDSS V DS = 0.8 VDSS V GS = 0 V RDS(on) V GS = -10 V, ID = 0.5 ID25 © 2001 IXYS All rights reserved Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 25°C TJ = 125°C V -5.0 V ±100 nA -25 -1 µA mA 1.0 Ω • High side switching • Push-pull amplifiers • DC choppers • Automatic test equipment Advantages • Easy to mount with 1 screw (isolated mounting screw hole) • Space savings • High power density 98849 (8/01) IXTH 10P60 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs V DS = -10 V; ID = ID25, pulse test 5 9 S 4700 pF 430 pF Crss 135 pF td(on) 33 ns Ciss Coss V GS = 0 V, VDS = -25 V, f = 1 MHz tr V GS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 27 ns td(off) RG = 4.7 Ω (External) 85 ns 35 ns 160 nC 46 nC 92 nC tf Qg(on) Qgs V GS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 0.42 RthJC K/W 0.25 RthCS Source-Drain Diode K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS V GS = 0 -10 A ISM Repetitive; pulse width limited by TJM -40 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % -3 V t rr IF = IS, di/dt = 100 A/µs 500 TO-247 AD Outline 1 2 3 Terminals: 1 - Gate 3 - Source Dim. 2 - Drain Tab - Drain Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC ns IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025