INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 2 July 2002. MIL-PRF-19500/511E 2 April 2002 SUPERSEDING MIL-PRF-19500/511D 19 January 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPE 2N4261, 2N4261UB, JAN, JANTX, JANTXV AND JANS, JANHC AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP silicon, switching transistors. Four levels of product assurance are provided for each encapsulated device type and two levels for unencapsulated dice as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (TO-72), figure 2 (UB) and figure 3 (JANHC, JANKC). 1.3 Maximum ratings. RΘJA VCBO VCEO VEBO IC TJ TJ and TSTG mW V dc V dc V dc mA dc °C °C °C/mW 200 15 15 4.5 30 200 -65 to +200 0.860 PT TA = +25°C (1) (1) Derate linearly 1.14 mW/°C above TA = +25°C. 1.4 Primary electrical characteristics at TA = +25°C, unless otherwise specified. Min Max hFE1 (1) hFE2 (1) hFE3 (1) |hfe2| VCE = 1.0 V dc IC = 1 mA dc VCE = 1.0 V dc VCE = 1.0 V dc IC = 30 mA dc VCE = 10 V dc IC = 10 mA dc f = 100 MHz 25 30 150 20 20 IC = 10 mA dc rb’ Cc VCE = 4.0 V dc IC = 5 mA dc f = 31.8 MHz ps 60 Switching ton toff ns ns 2.5 3.5 See note on next page. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/511E 1.4 Primary electrical characteristics at TA = +25°C, unless otherwise specified - Continued. Min Max VCE(sat)1 VCE(sat)2 VBE1 VBE2 Cobo IC = 1 mA dc IC = 1 mA dc VCE = 1 V dc IC = 10 mA dc VCE = 1 V dc VCB = 4 V dc IB = 0.1 mA dc IC = 10 mA dc IB = 1.0 mA dc V dc V dc V dc V dc PF 0.15 0.35 0.8 1.0 2.5 IE = 0 100 kHz ≤ f ≤ 1 MHz (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD DEPARTMENT OF DEFENSE MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The requirements for acquiring the product described herein shall consist of this document and MIL-PRF-19500. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML) before contract award (see 4.2 and 6.3). 2 MIL-PRF-19500/511E TO-72 Symbol CD CH HD LC LD LL LU L1 L2 P Q TL TW r α Dimensions Inches Millimeters Min Max Min Max .178 .195 4.52 4.95 .170 .210 4.32 5.33 .209 .230 5.31 5.84 .100 TP 2.54 TP .016 .021 .406 .533 .500 .750 12.70 19.05 .016 .019 .41 .48 .050 1 .27 .250 6.35 .100 2.54 .040 1.02 .028 .048 .71 1.22 .036 .046 .91 1.17 .007 .18 45° TP Notes 5 5 7,8 7,8 7,8 5 NOTES: 1. 2. 3. 4. 5. 6. Dimension are in inches. Metric equivalents are given for general information only. Beyond r (radius) maximum, TH shall be held for a minimum length of .011 (0.28 mm). Dimension TL measured from maximum HD. Body contour optional within zone defined by HD, CD, and Q. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods or by the gauge and gauging procedure shown in figure 2. 7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8. All four leads. 9. Dimension r (radius) applies to both inside corners of tab. 10. In accordance with ANSI Y14.5M, diameters are equivalent to Φx symbology. 11. Lead 1 = emitter, lead 2 = base, lead 3 = collector, lead 4 = case (electrically connected). FIGURE 1. Physical dimensions for 2N4261 (T0-72). 3 MIL-PRF-19500/511E UB Symbol A A1 B1 B2 B3 D D1 D2 D3 E E3 L1 L2 Inches Min .046 .017 .016 .016 .016 .085 .071 .035 .085 .115 .022 .022 Dimensions Millimeters Max Min Max .056 0.97 1.42 .035 0.43 0.89 .024 0.41 0.61 .024 0.41 0.61 .024 0.41 0.61 .108 2.41 2.74 .079 1.81 2.01 .039 0.89 0.99 .108 2.41 2.74 .128 2.82 3.25 .128 3.25 .038 0.56 0.96 .038 0.56 0.96 Note NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. FIGURE 2. Physical dimensions for 2N4261UB, surface mount. 4 MIL-PRF-19500/511E B E Die size-----------.016 x .016 inch (0.406 mm x 0.406mm). Die thickness---.008 ±.0016 inch (0.203 mm ±0.406mm). Base pad--------.0021 x.0021 inch (0.053 mm x 0.053 mm). Emitter pad-----.0021 x.0021 inch (0.053 mm x 0.053 mm). Back metal-----Gold, 6500 ± 1950 Ang. Top metal------Aluminum, 14500 ± 2500 Ang. Back side------Collector. Glassivation---SiO2, 7500 ± 1500 Ang. FIGURE 3. JANHC and JANKC (A-version) die dimensions. 5 MIL-PRF-19500/511E 3.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF-19500 and as follows: gs ............ Noise source conductance. Po............ Oscillator, power output. RBE.......... External resistance, base to emitter. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and figure 1 (TO-72), figure 2 (UB), and figure 3 (JANHC and JANKC) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the contract or purchase order (see 6.2). 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.6 Electrical test requirements. The electrical test requirements shall be the subgroups in table I herein. 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking may be omitted from the body of the UB package, but shall be retained on the initial container. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4.VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). See table I. 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. * 4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with MIL-PRF-19500. * 4.2.2 Group E qualification. Group E qualification shall be performed herein for qualification or requalification only. In case qualification was awarded to a prior revision of the associated specification that did not request the performance of Group E tests, the tests specified in Group E herein shall be performed by the first inspection lot to this revision to maintain qualification. 6 MIL-PRF-19500/511E 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV of MIL-PRF-19500) Measurements JANS *3c JANTX, JANTXV levels Thermal impedance, method 3131 of MIL-STD-750. Thermal impedance, method 3131 of MIL-STD-750. 9 ICEX2 and hFE2 Not applicable 11 ICEX2 and hFE2; ∆ICEX2 = 100 percent of initial value or 1 nA dc, whichever is greater. ∆hFE2 = ± 15 percent of initial value. ICEX2 and hFE2 12 See 4.3.1. See 4.3.1. 13 Subgroup 2 and 3 of table I herein; ∆ICEX2 = 100 percent of initial value or 1 nA dc, whichever is greater. ∆hFE2 = ± 25 percent of initial value. Subgroup 2 of table I herein; ∆ICEX2 = 100 percent of initial value or 2 nA dc, whichever is greater. ∆hFE2 = ± 25 percent of initial value. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA = room ambient in accordance with the general requirements of MIL-STD-750 (see 4.5). VCB = 10 V dc, PT = 200 mW. 4.3.2 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with MIL-PRF-19500, “Discrete Semiconductor Die/Chip Lot Acceptance”. Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. Electrical measurements (end-points) shall be in accordance with table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table VIa (JANS) and 4.4.2.2 (JAN, JANTX, and JANTXV) herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition * B4 1037 VCB = 10 V dc, 2,000 cycles. * B5 1027 VCB = 10 V dc; 1,000 hours maximum rated power shall be applied and ambient temperature adjusted to achieve TJ = +150°C minimum. n = 45, c = 0. 7 MIL-PRF-19500/511E 4.4.2.2 Group B inspection, (JAN, JANTX and JANTXV). Separate samples may be used for each step. In the event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed assembly lot shall be scrapped. Method Conditions 1 1027 Steady-state life: Test condition B, 340 hours, VCB = 10 V dc; maximum rated power shall be applied and ambient temperature adjusted to achieve TJ = +150°C minimum n = 45 devices, c = 0. For small lots, n = 12 devices, c = 0. 2 1027 The steady-state life test of step 1 shall be extended to 1,000 hours for each die design. Samples shall be selected from a wafer lot every twelve months of wafer production. Group B, step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0. 3 1032 High temperature life (non-operating), t = 340 hours, TA = +200°C. n = 22, c = 0. Step 4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements: a. For JAN, JANTX and JANTXV samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. For JANS samples shall be selected from each inspection lot. See MIL-PRF-19500. b. Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2 conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX and JANTXV) may be pulled prior to the application of final lead finish. 8 MIL-PRF-19500/511E 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table VII of MIL-PRF-19500 and herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. * Subgroup Method Condition C2 2036 Test condition E; n/a for UB. C5 3131 See 1.3 RθJA C6 1026 VCB = 10 V dc; PT = 200 mW, time = 1,000 hrs, adjust TA to achieve Tj = +150°C minimum. Not applicable to JAN, JANTX, JANTXV levels. 4.4.3.1 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any inspection lot containing the intended package type and lead finish procured to the same specification which is submitted to and passes group A tests for conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for C6 life test may be pulled prior to the application of final lead finish. Testing of a subgroup using a single device type enclosed in the intended package type shall be considered as complying with the requirements for that subgroup. * 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table IX of MIL-PRF-19500 and as specified herein. Electrical measurements (endpoints) shall be in accordance with table I, group A, subgroup 2 herein. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Collector base time constant. This parameter may be determined by applying an RF signal voltage of 0.5 volt (rms) across the collector base terminals, and measuring the ac voltage drop (Veb) with a high impedance RF voltmeter across the emitter base terminals. With f = 31.8 MHz used for the 0.5 volt signal, the following computation applies: rb’ Cc: (ps) = 10 x Veb (millivolts). 4.5.3 Base cutoff current. This parameter shall be measured using method 3041 of MIL-STD-750, bias condition A. The value of the base to emitter cutoff current shall be read on the current meter inserted in the base circuit. 9 MIL-PRF-19500/511E TABLE I. Group A inspection. MIL-STD-750 Inspection 1/ Method Symbol Conditions Limit Min Unit Max Subgroup 1 2/ Visual and mechanical examination 3/ 2071 n = 45 devices, c = 0 Solderability 3/ 4/ 2026 n = 15 leads, c = 0 Resistance to solvents 3/ 4/ 5/ 1022 n = 15 devices, c = 0 Temp cycling 3/ 4/ 1051 Test condition C, 25 cycles. n = 22 devices, c = 0 1071 n = 22 devices, c = 0 Heremetic seal 4/ Fine leak Gross leak Electrical measurements 4/ Bond strength 3/ 4/ Group A, subgroup 2 2037 Precondition TA = +250°C at t = 24 hrs or TA = +300°C at t = 2 hrs n = 11 wires, c = 0 Collector to emitter breakdown voltage 3011 Bias condition D, IC = 10 mA dc; Collector to base cutoff current 3036 Bias Condition D, VCBO= 15 V ICBO 10 µA dc Emitter-base cutoff current 3061 Bias condition D, VEB = 4.5 V dc IEBO 10 µA dc Collector to emitter cutoff current 3041 Bias condition A; VBE = 0.4 V dc VCE = 10 V dc ICEX1 50 nA dc Collector to emitter cutoff current 3041 Bias condition A; VBE = 2.0 V dc ICEX2 5.0 nA dc VBE = 2.0 V dc; VCE = 10 V dc, see 4.5.3 IBEX 5.0 nA dc Subgroup 2 V(BR)CEO 15 V dc VCE = 10 V dc Base cutoff current Forward-current transfer ratio 3076 VCE = 1.0 V dc; IC = 1.0 mA dc; pulsed (see 4.5.1) hFE1 25 Forward-current transfer ratio 3076 VCE = 1.0 V dc; IC = 10 mA dc; pulsed (see 4.5.1) hFE2 30 Forward-current transfer ratio 3076 VCE = 1.0 V dc; IC = 30 mA dc; pulsed (see 4.5.1) hFE3 20 See footnotes at end of table. 10 150 MIL-PRF-19500/511E TABLE I. Group A inspection - Continued. MIL-STD-750 Inspection 1/ Method Symbol Conditions Limit Min Unit Max Subgroup 2 - Continued. Base to emitter voltage (non-saturated) 3066 Test condition B; VCE = 1.0 V dc; IC = 1.0 mA dc VBE1 0.8 V dc Base to emitter voltage (non-saturated) 3066 Test condition B; VCE = 1.0 V dc; IC = 10 mA dc VBE2 1.0 V dc Collector to emitter saturated voltage 3071 IC = 1.0 mA dc; IB = 0.1 mA dc VCE(sat)1 0.15 V dc Collector to emitter saturated voltage 3071 IC = 10 mA dc; IB = 1.0 mA dc; pulsed (see 4.5.1) VCE(sat)2 0.35 V dc ICEX3 5.0 µA dc Subgroup 3 High-temperature operation: Collector to emitter cutoff current TA = +150°C 3041 Low-temperature operation : Forward-current transfer ratio Bias condition A; VBE = 2.0 V dc VCE = 10 V dc TA = -55°C 3076 VCE = 1.0 V dc IC = 10 mA dc; pulsed (see 4.5.1) hFE4 15 Subgroup 4 Magnitude of common emitter small-signal shortcircuit forward- current transfer ratio 3306 VCE = 4.0 V dc; IC = 5.0 mA dc; f = 100 MHz |hfe1| 15 Magnitude of common emitter small-signal shortcircuit forward- current transfer ratio 3306 VCE = 10 V dc; IC = 10 mA dc; f = 100 MHz |hfe2| 20 Open capacitance (open circuit) 3236 VCB = 4.0 V dc; IE = 0; 100 kHz ≤ f ≤ 1.0 MHz Cobo 2.5 pF Input capacitance (output open circuit) 3240 VEB = 0.5 V dc; IC = 0; 100 kHz ≤ f ≤ 1.0 MHz Cibo 2.5 pF Collector-base time constant VCE = 4.0 V dc; IC = 5.0 mA dc; f = 31.8 MHz; see 4.5.2 and figure 4 r’b’ Cc1 60 ps Collector-base time constant VCE = 4.0 V dc; IC = 10 mA dc; f = 31.8 MHz; see 4.5.2 and figure 4 r’b’ Cc2 50 ps See footnotes at end of table. 11 MIL-PRF-19500/511E TABLE I. Group A inspection - Continued. MIL-STD-750 Inspection 1/ Method Conditions 3251 Test condition B, except test circuit and pulse requirements in accordance with figure 5 herein. Symbol Limit Min Unit Max Subgroup 4 - Continued. Pulse response: Turn-on time VCC = 17 V dc; IC = 10 mA dc; ton 2.5 ns Turn-off time VCC = 17 V dc; IC = 10 mA dc; toff 3.5 ns Subgroups 5, 6 and 7 Not applicable 1/ For sampling plan (unless otherwise specified) see MIL-PRF-19500. 2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure in group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon submission. 3/ Separate samples may be used. 4/ Not required for JANS devices. 5/ Not required for laser marked devices. 12 MIL-PRF-19500/511E *TABLE II. Group E inspection (all quality levels) - for qualification only. Inspection MIL-STD-750 Method Qualification Conditions 45 devices c=0 Subgroup 1 Temperature cycling (air to air) 1051 Hermetric seal 1071 Test condition C, 500 cycles. Fine leak Gross leak Electrical measurements See group A, subgroup 2 and 4.5.3 herein. Subgroup 2 Intermittent life 45 devices c=0 1037 Electrical measurements Intermittent operation life: VCB = 10 V dc; 6,000 cycles. See group A, subgroup 2 and 4.5.3 herein. Subgroup 3, 4, 5, 6, and 7 Not applicable Subgroup 8 Reverse stability 45 devices c=0 1033 Condition A ≥ 400 V Condition B < 400 V 13 MIL-PRF-19500/511E Procedure: 1. Set signal generator to 31.8 MHz and connect to “in” connector on test jig. 2. Connect low voltage dc power supplies as shown. A 1 k ohm resistor should be placed in series with the emitter power supply to prevent damage to transistors being tested. 3. Place transistor to be tested in socket. Set collector supply for VCE = 4.0 V dc, and emitter supply for IC as specified. 4. Connect RF voltmeter with unterminated probe adapter to “CAL” connector on test jig. Adjust signal generator until RF voltage is 0.5 volts. (Note: Decade switching of voltmeter should be accurate from 1 mV to 3 volts. If not, input voltage may be set using voltage dividers, utilizing lower scales of the RF voltmeter. If this is done, the voltage dividers should be left in place when the voltmeter is removed, as they constitute a load on the input of the circuit. 5. Remove RF voltmeter from “CAL” connector to “OUT” connector. Meter will now read rb’ Cc as follows: Meter range full scale 0.003 volts 0.01 volts 0.03 volts rb’ Cc range 10 to 30 ps 30 to 100 ps 100 to 300 ps FIGURE 4. Collector base time constant test circuit (an equivalent circuit may be used). 14 MIL-PRF-19500/511E NOTES: 1. The input waveform is supplied by a pulse generator with the following characteristics: ZOUT = 50 ohms; PW = 30 ns; duty cycle ≤ 2 percent. 2. Resistors shall be noninductive types. 3. The dc power supplies may require additional bypassing in order to minimize ringing. FIGURE 5. Switching time test circuit and waveforms. 15 MIL-PRF-19500/511E 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements should be as specified in the contract or order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification. * 6.2 Acquisition requirements. Acquisition documents must specify the following: a. Title, number, and date of this specification. b. Issue of DoDISS to be cited in the solicitation, and if required, the specific issue of individual documents referenced (see 2.2.1). c. Packaging requirements (see 5.1). d. Lead finish (see 3.4.1). 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000. 6.4. Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter version (example JANHCA2N4261) will be identified on the QPL. Die ordering information PIN Manufacturer 34156 2N4261 JANHCA2N4261, JANKCA2N4261 16 MIL-PRF-19500/511E * 6.5 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where changes from the previous issue were made. This was done as a convenience only and the Government assumes no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the requirements of this document based on the entire content irrespective of the marginal notations and relationship to the last previous issue. Custodians: Army - CR Air Force - 11 DLA - CC Preparing activity: DLA - CC (Project 5961-2555) Review activities: Air Force - 19, 71, 99 17 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER MIL-PRF-19500/511E 2. DOCUMENT DATE 2 April 2002 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPE 2N4261, 2N4261UB, JAN, JANTX, JANTXV AND JANS, JANHC AND JANKC 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) b. ORGANIZATION c. ADDRESS (Include Zip Code) d. TELEPHONE (Include Area Code) COMMERCIAL DSN FAX EMAIL 7. DATE SUBMITTED 8. PREPARING ACTIVITY a. Point of Contact Alan Barone c. ADDRESS Defense Supply Center Columbus ATTN: DSCC-VAC P.O. Box 3990 Columbus, OH 43216-5000 DD Form 1426, Feb 1999 (EG) b. TELEPHONE Commercial DSN FAX EMAIL 614-692-0510 850-0510 614-692-6939 [email protected] IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM) 8725 John J. Kingman, Suite 2533 Fort Belvoir, VA 22060-6221 Telephone (703) 767-6888 DSN 427-6888 Previous editions are obsolete WHS/DIOR, Feb 99