SEMICONDUCTOR TECHNICAL DATA KDV262E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATV TUNING. FEATURES Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner. 1 A Low Series Resistance : rS=0.6 (Typ.) E C B CATHODE MARK High Capacitance Ratio : C2V/C25V=12.5(Typ.) 2 D MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL RATING UNIT VR 34 V Peak Reverse Voltage VRM 36 (RL=10k ) V Junction Temperature Tj 125 Tstg -55 125 Reverse Voltage Storage Temperature Range F DIM A B C D E F 1. ANODE 2. CATHODE MILLIMETERS _ 0.10 1.60 + _ 0.10 1.20 + _ 0.10 0.80 + _ 0.05 0.30 + _ 0.10 0.60 + _ 0.05 0.13 + ESC ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Voltage VR IR=1 A 34 - - V Reverse Current IR VR=28V - - 10 nA Capacitance C2V VR=2V, f=1MHz 33 35.5 38 pF Capacitance C25V VR=25V, f=1MHz 2.6 2.85 3.0 pF C2V/C25V 12.0 12.5 - C25V/C28V 1.03 - - - 0.6 0.8 Capacitance Ratio rS Series Resistance VR=5V, f=470MHz - Note : Available in matched group for capacitance to 2.0%. C(Max.)-C(Min.) C(Min.) 0.02 (VR=2~25V) Marking Type Name UQ 2003. 10. 16 Revision No : 1 1/2 KDV262E I R - VR C V - VR 1000p f=1MHz Ta=25 C REVERSE CURRENT I R (A) CAPACITANCE CV (pF) 50 10 5 10 20 C 25 Ta= 10p 1p 16 24 32 REVERSE VOLTAGE VR (V) r s - VR C - Ta C (%) REVERSE VOLTAGE VR (V) 1.0 f=470MHz Ta=25 C 0.8 0.6 0.4 0.2 0 1 8 0 30 3 5 10 REVERSE VOLTAGE VR (V) Revision No : 1 30 CAPACITANCE CHANGE RATIO 0 SERIES RESISTANCE rs (Ω) 0 C Ta=5 0.1p 1 2003. 10. 16 5 C Ta=7 100p 3 f=1MHz VR =2V 2 1 10V 0 20V 25V -1 -2 -40 -20 0 20 40 60 80 AMBIENT TEMPERATURE Ta ( C) 2/2