BB679... Silicon Variable Capacitance Diode Designed for tuning wideband CATV-Tuners High capacitance ratio C1V/C28V (typ. 18.3) Low series resistance Excellent uniformity and matching due to "in-line" matching assembly procedure 1 BB679-02V 2 Type BB679-02V* Package SC79 Configuration single LS (nH) Marking 0.6 K * Preliminary Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 30 Peak reverse voltage ( R 5k ) VRM 35 Forward current IF 20 mA Operating temperature range Top -55 ... 125 °C Storage temperature Tstg -55 ... 150 1 Value Unit V Oct-25-2002 BB679... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. Unit max. DC Characteristics Reverse current IR nA VR = 30 V - - 10 VR = 30 V, TA = 85 °C - - 100 AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz 43.5 47.5 51.5 VR = 2 V, f = 1 MHz 33 36 38.8 VR = 25 V, f = 1 MHz 2.55 2.75 2.95 VR = 28 V, f = 1 MHz 2.4 2.6 2.8 CT1 /CT28 16.5 18.3 20 12 13.1 14.5 CT/CT - - 2 % rS - 0.6 0.8 Capacitance ratio - VR = 1 V, VR = 28 V, f = 1 MHz Capacitance ratio CT2 /CT25 VR = 2 V, VR = 25 V, f = 1 MHz Capacitance matching1) VR = 1 V, VR = 28 V, f = 1 MHz Series resistance VR = 5 V, f = 470 MHz 1For details please refer to Application Note 047. 2 Oct-25-2002 BB679... Diode capacitance CT = (VR ) Normalized diode capacitance C(TA) /C(25°C)= (TA ); f = 1MHz f = 1MHz 10 2 1.04 CT CTA/C 25°C pF 1V 2V 7V 15 V 25 V 28 V 1.02 1.01 10 1 1 0.99 0.98 10 0 0 10 10 1 V 10 0.97 -40 2 -20 0 20 40 60 °C 100 TA VR Reverse current IR = (TA ) Temperature coefficient of the diode capacitance TCc = (VR ) VR = 28 V 10 -3 10 -9 A 1/°C IR Tcc 10 -10 10 -4 10 -11 10 -5 0 10 10 1 V 10 10 -12 -40 2 VR -20 0 20 40 60 °C 100 TA 3 Oct-25-2002 BB679... Reverse current IR = (VR) Reverse voltage VBR = (TA) TA = Parameter IR = 5µA 10 -9 45 A 85°C 60°C 10 -10 VBR V IR 25°C 10 -11 35 10 -12 10 -13 0 10 10 1 V 10 30 -40 2 VR -20 0 20 40 60 °C 100 TA 4 Oct-25-2002