FAIRCHILD KSP13BU

KSP13/14
KSP13/14
Darlington Transistor
• Collector-Emitter Voltage: VCES=30V
• Collector Power Dissipation: PC (max)=625mW
TO-92
1
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Value
30
Units
V
VCES
VEBO
Collector-Emitter Voltage
30
V
Emitter-Base Voltage
10
IC
V
Collector Current
500
mA
PC
Collector Power Dissipation
625
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCES
Parameter
Collector-Emitter Breakdown Voltage
Test Condition
IC=100µA, IB=0
Min.
30
Max.
Units
V
ICBO
Collector Cut-off Current
VCB=30V, IE=0
100
nA
IEBO
Emitter Cut-off Current
VEB=10V, IC=0
100
nA
hFE
* DC Current Gain
: KSP13
: KSP14
: KSP13
: KSP14
VCE=5V, IC=10mA
VCE=5V, IC=100mA
5K
10K
10K
20K
VCE (sat)
Collector-Emitter Saturation Voltage
IC=100mA, IB=0.1mA
1.5
V
VBE (on)
Base-Emitter On Voltage
VCE=5V, IC=100mA
2.0
V
fT
Current Gain Bandwidth Product
VCE=5V, IC=10mA
f=100MHz
125
MHz
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSP13/14
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Typical Characteristics
1M
hFE, DC CURRENT GAIN
VCE = 5V
100k
10k
1k
1
10
100
1000
10
IC = 1000 IB
V BE(sat)
1
V CE(sat)
0.1
10
IC [mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
VCE = 5V
IC[mA], COLLECTOR CURRENT
100
10
0.4
0.8
1.2
1.6
2.0
2.4
VBE [V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter On Voltage
©2002 Fairchild Semiconductor Corporation
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
Figure 1. DC current Gain
1
0.0
100
1000
VCE = 5V
100
10
1
10
100
IC[mA], COLLECTOR CURRENT
Figure 4. Current Gain Bandwidth Product
Rev. A2, September 2002
KSP13/14
Package Dimensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1