SEMICONDUCTOR KTC3878S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. HF, VHF AMPLIFIER APPLICATION. FEATURE E B L L 3 H G A 2 D ᴌLow Noise Figure : NF=3.5dB(Max.) (f=1MHz). 1 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 35 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 4 V Collector Current IC 100 mA Emitter Current IE -100 mA Collector Power Dissipation PC 150 mW Junction Temperature Tj 150 ᴱ Tstg -55ᴕ150 ᴱ Storage Temperature Range P J C N P DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 K M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 Marking h FE Rank Lot No. F Type Name ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=20V, IE=0 - - 0.1 Ọ A Emitter Cut-off Current IEBO VEB=2V, IC=0 - - 1.0 Ọ A hFE (Note) VCE=12V, IC=2mA 40 - 240 Collector-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=1mA - - 0.4 V Base-Emitter Saturation Voltage VBE(sat) IC=10mA, IB=1mA - - 1.0 V Transition Frequency fT VCE=10V, IC=2mA 80 120 - MHz Reverse Transfer Capacitance Cre VCB=10V, IE=0, f=1MHz - 2.2 3.0 pF Collector-Base Time Constant Ccᴌrbb’ VCE=10V, IE=-1mA, f=30MHz - 30 50 pS - 2.0 3.5 dB DC Current Gain Noise Figure Note : hFE Classification 2001. 2. 24 NF VCE=10V, IE=-1mA, f=1MHz, Rg=50ή R:40ᴕ80 , O:70ᴕ140 , Y:120ᴕ240 Revision No : 2 1/2 KTC3878S y PARAMETERS (Typ.) (COMMON EMITTER VCE=6V, IE=-1mA, f=1MHz) CHARACTERISTIC SYMBOL KTC3878S-R KTC3878S-O KTC3878S-Y UNIT Input Conductance gie 0.5 0.35 0.22 mS Input Capacitance Cie 50 48 46 pF Output Conductance goe 4 5 6.5 Ọ S Output Capacitance Coe 3.7 3.4 3.2 pF Forward Transfer Admittance |yfe| 36 36 36 mS Phase Angle of Forward Transfer Admittance Ỉ fe -1.6 -1.6 -1.6 ᴮ Reverse Transfer Admittance |yre| 14 14 14 Ọ S Phase Angle of Reverse Transfer Admittance Ỉ re -90 -90 -90 ᴮ 10 5 -0.1 -0.3 -1 EMITTER CURRENT IE REVERSE TRANSFER ADMITTANCE yre (µS) y re -3 -5 f=1MHz Θ re =-90 30 Ta=25 C 10 5 3 2 4 6 8 10 12 14 16 COLLECTOR-EMITTER VOLTAGE VCE (V) 2001. 2. 24 50 Revision No : 2 yfe R, O, Y Θ fe R, O, Y fe 30 -1 -0.5 -0.3 10 5 3 -0.1 -1 -0.3 -3 -5 EMITTER CURRENT I E (mA) COMMON EMITTER I E =-1mA 50 COMMON EMITTER VCE =6V f=1MHz Ta=25 C (mA) - VCE 100 -3 100 y fe , Θfe - VCE -50 -30 -10 -5 -3 -1 -0.5 -0.3 500 COMMON EMITTER VCE =6V f=1MHz Ta=25 C 300 100 fe 30 -5 FORWARD TRANSFER ADMITTANCE y (mS) 50 -10 FORWARD TRANSFER ADMITTANCE y (mS) COMMON EMITTER V CE =6V f=1MHz Θ re =-90 Ta=25 C PHASE ANGLE OF FORWARD TRANSFER ADMITTANCE Θ fe ( ) 100 y fe , Θfe - I E - IE PHASE ANGLE OF FORWARD TRANSFER ADMITTANCE Θ fe ( ) REVERSE TRANSFER ADMITTANCE yre (µS) y re y fe 50 30 Θ fe 10 5 3 2 4 6 8 10 12 14 16 COLLECTOR-EMITTER VOLTAGE VCE (V) 2/2