SEMICONDUCTOR KTD1854T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR DRIVER APPLICATIONS. FEATURES ᴌAF amplifier, solenoid drivers, LED drivers. ᴌDarlington connection. ᴌHigh DC current gain. ᴌVery small-sized package permitting sets to be made smaller and slimer. ᴌComplementary to KTB1234T. E UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 10 V DC IC 200 Pulse ICP 400 PC * 0.9 W Tj 150 ᴱ Tstg -55ᴕ150 ᴱ Junction Temperature Storage Temperature Range F D G G D E F G 2.8+0.2/-0.3 _ 0.2 1.9 + 0.95 _ 0.05 0.16 + H I J K L L C RATING Collector Power Dissipation 1 MILLIMETERS _ 0.2 2.9 + 1.6+0.2/-0.1 _ 0.05 0.70 + _ 0.1 0.4 + C 3 J SYMBOL Collector Current 2 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 H I A DIM A B MAXIMUM RATINGS (Ta=25ᴱ) CHARACTERISTIC B K J 1. EMITTER 2. BASE 3. COLLECTOR TSM mA * Package mounted on a ceramic board (600Ὅᴧ0.8Ὂ) Marking EQUIVALENT CIRCUIT Lot No. COLLECTOR LY Type Name BASE EMITTER ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=60V, IE=0 - - 100 nA Emitter Cut-off Current IEBO VEB=8V, IC=0 - - 100 nA Collector-Base Breakdown Voltage V(BR)CBO IC=10Ọ A, IE=0 80 V Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 50 V Emitter-Base Breakdown Voltage V(BR)EBO IC=10Ọ A, IC=0 10 V DC Current Gain hFE 1 VCE=2V, IC=10mA 5000 - - hFE 2 VCE=2V, IC=100mA 4000 - - Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=100ỌA - 0.9 1.5 V Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=100ỌA - 1.5 2.0 V 2001. 10. 23 Revision No : 0 1/2 KTD1854T I C - V CE 100K 6µA 5µA 80 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) 100 h FE - I C 4µA 60 3µA 40 2µA 20 1µA I B =0µA 0 0 1 2 3 4 30K Ta=75 C Ta=25 C Ta=-25 C 10K 5K 3K 1K 5 1 100 V CE(sat) - I C VBE(sat) - I C 5 BASE-EMITTER SATURATION VOLTAGE V BE(sat) (V) Ta=-25 C 1 Ta=25 C Ta=75 C 0.5 0.3 200 I C /I B =1000 3 Ta=-25 C Ta=25 C 1 Ta=75 C 0.5 0.2 10 30 50 100 10 300 30 COLLECTOR CURRENT I C (mA) COLLECTOR POWER DISSIPATION PC (W) VCE =2V 160 5 C C Ta=2 5 Ta=2 C Ta=7 5 120 40 0 0.6 0.8 1.0 1.2 100 300 Pc - Ta 200 80 50 COLLECTOR CURRENT I C (mA) I C - V BE COLLECTOR CURRENT I C (mA) 30 COLLECTOR CURRENT I C (mA) I C /I B =1000 1.4 1.6 BASE-EMITTER VOLTAGE V BE (V) 2001. 10. 23 10 3 COLLECTOR-EMITTER VOLTAGE VCE (V) 3 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VCE =2V 50K Revision No : 0 1.8 1.4 MOUNTED ON A CERAMIC BOARD (600mm 2 `0.8mm) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) 2/2