SEMICONDUCTOR KTA1542T TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS, STROBES APPLICATION. E FEATURES B K DIM A B ᴌAdoption of MBIT Processes. 1 C 3 D D G ᴌHigh-Speed Switching. 2 F A ᴌLow Collector-to-Emitter Saturation Voltage. G ᴌLarge Current Capacitance. ᴌUltrasmall Package Facilitates Miniaturization in end Products. CHARACTERISTIC L J RATING UNIT Collector-Base Voltage VCBO -30 V 1. EMITTER Collector-Emitter Voltage VCEO -30 V 3. COLLECTOR Emitter-Base Voltage VEBO -5 V DC IC -3 Pulse ICP -5 IB -600 mA PC * 0.9 W Tj 150 ᴱ Tstg -55ᴕ150 ᴱ Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 J SYMBOL Collector Current 2.8+0.2/-0.3 _ 0.2 1.9 + 0.95 _ 0.05 0.16 + H I C ᴌComplementary to KTC3542T. MAXIMUM RATING (Ta=25ᴱ) E F G H I J K L ᴌHigh Allowable Power Dissipation. MILLIMETERS _ 0.2 2.9 + 1.6+0.2/-0.1 _ 0.05 0.70 + _ 0.1 0.4 + 2. BASE A TSM Marking Lot No. SH Type Name * Package mounted on a ceramic board (600Ὅᴧ0.8Ὂ) ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-30V, IE=0 - - -0.1 Ọ A Emitter Cut-off Current IEBO VEB=-4V, IC=0 - - -0.1 Ọ A Collector-Base Breakdown Voltage V(BR)CBO IC=-10ỌA, IE=0 -30 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA, IB=0 -30 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=-10ỌA, IC=0 -5 - - V VCE(sat)1 IC=-1.5A, IB=-30mA - -155 -230 mV VCE(sat)2 IC=-1.5A, IB=-75mA - -105 -155 mV VBE(sat) IC=-1.5A, IB=-30mA - -0.83 -1.2 V DC Current Gain hFE VCE=-2V, IC=-500mA 200 - 560 Transition Frequency fT VCE=-10V, IC=-500mA - 380 - MHz VCB=-10V, f=1MHz - 25 - pF - 50 - - 270 - - 25 - Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Output Capacitance Turn-On Time Cob PW=20µs DC <= 1% ton INPUT Swiitching Time Storage Time tstg IB1 I B2 RB 50Ω tf 24Ω VR 100µF Fall Time OUTPUT nS 470µF V BE =5V VCC =-12V -20IB1=20IB2=IC =-500mA 2001. 6. 29 Revision No : 0 1/3 KTA1542T h FE - I I C - V CE m 20 - -8.0mA -40mA -6.0mA -1.2 -4.0mA -0.8 -2.0mA -0.4 DC CURRENT GAIN h FE -1.6 1K -10mA A -30 mA mA -5 0 COLLECTOR CURRENT I C (A) -2.0 IB=0mA 0 0 -200 -400 -600 -800 VCE =-2V Ta=75 C 500 300 Ta=25 C Ta=-25 C 100 50 30 10 -0.01 -1K -0.03 COLLECTOR-EMITTER VOLTAGE VCE (mV) IC /I B =20 -0.1 -0.05 -0.03 C 75 Ta= C 25 Ta= -0.01 -25 Ta= C -0.005 -0.003 -0.001 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 -10 -1 -0.1 75 C Ta= 25 C Ta= -0.05 -0.03 -0.01 -0.01 -0.03 -3 Ta=-25 C Ta=75 C -0.3 -0.03 -0.1 -0.3 -1 -3 COLLECTOR CURRENT I C (A) 2001. 6. 29 -0.3 C -1 -3 -10 Revision No : 0 -10 VCE =-2V -3.5 -3.0 -2.5 Ta=75 C Ta=2 5 C Ta=-25 C COLLECTOR CURRENT I C (A) BASE-EMITTER SATURATION VOLTAGE VBE(sat) (mV) -5 -0.1 -0.01 -0.1 5 =-2 Ta I C - V BE -4.0 Ta=25 C -10 COLLECTOR CURRENT I C (A) IC /I B =50 -0.5 -3 -0.5 -0.3 VBE(sat) - I C -1 -1 IC /I B =50 -5 -3 COLLECTOR CURRENT I C (A) -10 -0.3 VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -1 -0.1 COLLECTOR CURRENT I C (A) VCE(sat) - I C -0.5 -0.3 C -2.0 -1.5 -1.0 -0.5 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 BASE-EMITTER VOLTAGE V BE (V) 2/3 KTA1542T C ob - V CB 1K COLLECTOR OUTPUT CAPACITANCE C ob (pF) TRANSIION FREQUENCY f T (MHz) fT -IC VCE =-10V 500 300 100 50 30 10 -10 -30 -100 -300 -1K 100 f=1MHz 70 50 30 10 -3K -1 COLLECTOR CURRENT I C (mA) -3 -5 -10 -30 COLLECTOR-BASE VOLTAGE VCB (V) SAFE OPERATING AREA Pc - Ta -0.05 -0.03 -0.01 -0.1 mS * 10 * DC * 10 -0.5 -0.3 -0.1 S 0µ I C MAX (CONTINUOUS) 0m OP S* ER AT IO N * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE MOUNTED ON A CERAMIC BOARD (600mm 2 `0.8mm) -0.3-0.5 -1 -3 -5 -10 -30 -50 COLLECTOR POWER DISSIPATION PC (W) S* S 0µ -1 1m 50 -5 -3 I C MAX.(PULSED) 10 COLLECTOR CURRENT I C (A) -10 1.2 MOUNTED ON A CERAMIC BOARD 1.0 (600mm 2 `0.8mm) 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) COLLECTOR-EMITTER VOLTAGE VCE (V) 2001. 6. 29 Revision No : 0 3/3